MARKING M5K Search Results

A09 N03 MOSFET

Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Contextual Info: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04

Contextual Info: M5KP5.0A – M5KP110CA e3 Available 5,000 Watt Transient Voltage Suppressor (TVS) Protection Device Screening in reference to MIL-PRF-19500 available DESCRIPTION This Transient Voltage Suppressor series M5KP5.0A – M5KP110CA provides a range of standoff voltage options from 5.0 to 110 V in unidirectional, bidirectional, RoHS compliant, and

Contextual Info: Product specification MA3XD17 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Mini type 3-pin package 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 High breakdown voltage VR = 100 V

MA3XD17

Abstract: MARKING M5K
Contextual Info: Diodes SMD Type Schottky Barrier Diodes MA3XD17 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Mini type 3-pin package 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 High breakdown voltage VR = 100 V

Contextual Info: Schottky Barrier Diodes SBD MA3XD17 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) • Absolute Maximum Ratings Ta = 25°C 1.9±0.1 Unit Reverse voltage (DC) VR 100 V Peak reverse voltage

MA3XD17

Contextual Info: Schottky Barrier Diodes SBD MA3XD17 Silicon epitaxial planar type Unit : mm 2.8 + 0.25 1.45 0.95 0.65 ± 0.15 1.5 − 0.05 1 0.95 3 + 0.1 + 0.2 2.9 − 0.05 • Mini type 3-pin package • High breakdown voltage VR = 100 V 1.9 ± 0.2 0.65 ± 0.15 • Features

3296 suntan

Abstract: Potentiometer 3296 H 101 i 3296X potentiometer 3296 3266P 3296P 3296Y 3296Z 6H MARKING s35m
Contextual Info: Suntan S q u a r e r i m m i n g & 3296 P o t e n t i o m e t e r 3 266 m TSR-3296 TSR-3266 Multiturn/Cermet/Industrial/Sealed (5 Terminal Styles) TSR-3296 TSR •3296 TSR - 3266 10Q - 2MQ io n - 2MQ ±5 % ,± 1 0 % ± 5 % ,± 1 0 % sl%RSfc2Q s l% R â l0 Q

MA3XD17

Contextual Info: Schottky Barrier Diodes SBD MA3XD17 Silicon epitaxial planar type Unit : mm 2.8 + 0.25 1.45 0.95 0.65 ± 0.15 1.5 − 0.05 1 0.95 3 + 0.1 + 0.2 2.9 − 0.05 • Mini type 3-pin package • High breakdown voltage VR = 100 V 1.9 ± 0.2 0.65 ± 0.15 • Features

MA3XD17

Contextual Info: Schottky Barrier Diodes SBD MA3XD17 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 2.90+0.20 –0.05 Unit 100 V Peak reverse voltage VRM 100 V Non-repetitive peak forwardsurge-current *

Contextual Info: Schottky Barrier Diodes SBD MA3XD17 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) • Absolute Maximum Ratings Ta = 25°C 1.9±0.1 Unit Reverse voltage (DC) VR 100 V Peak reverse voltage

MA3XD17

Contextual Info: Schottky Barrier Diodes SBD MA3XD17 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 • Absolute Maximum Ratings Ta = 25°C 1.9±0.1 0.4±0.2 5˚ 2.90+0.20 –0.05

MA3XD17

Contextual Info: Schottky Barrier Diodes SBD MA3XD17 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 2.90+0.20 –0.05 Unit 100 V Peak reverse voltage VRM 100 10˚ V 1.1+0.3 –0.1 Rating VR 1.1+0.2 –0.1

Contextual Info: Schottky Barrier Diodes SBD MA3XD17 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 VRM Non-repetitive peak forwardsurge-current * IFSM Average forward current IF(AV) Junction temperature Tj Storage temperature

2d6 transistor

Abstract: TRANSISTOR MARKING 1d8
Contextual Info: SN74CBTU4411 11ĆBIT 1ĆOFĆ4 FET MULTIPLEXER/DEMULTIPLEXER 1.8ĆV DDRĆII SWITCH WITH CHARGE PUMP AND PRECHARGED OUTPUTS SCDS192 − APRIL 2005 D Supports SSTL_18 Signaling Levels D Suitable for DDR-II Applications D D−Port Outputs Are Precharged by Bias

Contextual Info: 5KP5.0e3 – 5KP250CAe3 Compliant 5,000 Watt Transient Voltage Suppressor TVS Protection Device DESCRIPTION This RoHS compliant transient voltage suppressor series 5KP5.0e3 - 5KP250CAe3 provides a range of standoff voltage options from 5.0 to 250V in both unidirectional and bidirectional

C101

Abstract: CTU4411 SN74CBTU4411 SN74CBTU4411GSTR
Contextual Info: SN74CBTU4411 11ĆBIT 1ĆOFĆ4 FET MULTIPLEXER/DEMULTIPLEXER 1.8ĆV DDRĆII SWITCH WITH CHARGE PUMP AND PRECHARGED OUTPUTS SCDS192 − APRIL 2005 D Supports SSTL_18 Signaling Levels D Suitable for DDR-II Applications D D−Port Outputs Are Precharged by Bias

2d6 transistor

Abstract: TRANSISTOR MARKING 1d6 TRANSISTOR MARKING 1d7
Contextual Info: SN74CBTU4411 11ĆBIT 1ĆOFĆ4 FET MULTIPLEXER/DEMULTIPLEXER 1.8ĆV DDRĆII SWITCH WITH CHARGE PUMP AND PRECHARGED OUTPUTS SCDS192 − APRIL 2005 D Supports SSTL_18 Signaling Levels D Suitable for DDR-II Applications D D−Port Outputs Are Precharged by Bias

Contextual Info: SN74CBTU4411 11ĆBIT 1ĆOFĆ4 FET MULTIPLEXER/DEMULTIPLEXER 1.8ĆV DDRĆII SWITCH WITH CHARGE PUMP AND PRECHARGED OUTPUTS SCDS192 − APRIL 2005 D Supports SSTL_18 Signaling Levels D Suitable for DDR-II Applications D D−Port Outputs Are Precharged by Bias

400w audio fet

Abstract: C101 CTU4411 SN74CBTU4411 SN74CBTU4411GSTR fet Marking M3
Contextual Info: SN74CBTU4411 11ĆBIT 1ĆOFĆ4 FET MULTIPLEXER/DEMULTIPLEXER 1.8ĆV DDRĆII SWITCH WITH CHARGE PUMP AND PRECHARGED OUTPUTS SCDS192 − APRIL 2005 D Supports SSTL_18 Signaling Levels D Suitable for DDR-II Applications D D−Port Outputs Are Precharged by Bias

TRANSISTOR MARKING 1d8

Contextual Info: SN74CBTU4411 11ĆBIT 1ĆOFĆ4 FET MULTIPLEXER/DEMULTIPLEXER 1.8ĆV DDRĆII SWITCH WITH CHARGE PUMP AND PRECHARGED OUTPUTS SCDS192 − APRIL 2005 D Supports SSTL_18 Signaling Levels D Suitable for DDR-II Applications D D−Port Outputs Are Precharged by Bias

Contextual Info: SN74CBTU4411 11ĆBIT 1ĆOFĆ4 FET MULTIPLEXER/DEMULTIPLEXER 1.8ĆV DDRĆII SWITCH WITH CHARGE PUMP AND PRECHARGED OUTPUTS SCDS192 − APRIL 2005 D Supports SSTL_18 Signaling Levels D Suitable for DDR-II Applications D D−Port Outputs Are Precharged by Bias

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated