MARKING M4A GENERAL SEMICONDUCTOR Search Results

MV209 diode

Abstract: mv209 DIODE M4A marking M4A general semiconductor MARKING C25 SOT23 M4A sot23
Contextual Info: ON Semiconductort MMBV109LT1, MV209 Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies

DIODE M4A

Abstract: j4a diode C25F
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBV109T1 MMBV109LT1* MV209* Silicon Epicap Diodes D esign ed for general frequency control and tuning applications; providing solid-state reliability in replacement of mechnaical tuning methods. * Motorola Preferrod Devices

Contextual Info: ON Semiconductor Power TMOS¨ MOSFETs and Diodes Power TMOS¨ MOSFETs Continued TO-247 Isolated Mounting Hole TMOS V (Continued) TO-247 Ñ N-Channel TMOS V ÑTO-220AB Mfr.Õs Type4 V(BR)DSS (V) Min. RDS(on) (½) Max. 1000 800 600 500 500 400 400 250 200

DIODE M4A

Abstract: MV209 MMBV109LT1 "Variable Capacitance Diodes" MV209 diode MV209 equivalent MMBV109LT1G MMBV109LT3 MMBV109LT3G MV209G
Contextual Info: MMBV109LT1, MV209 Preferred Devices Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid−state reliability in replacement of mechanical tuning methods. Features • • • • High Q with Guaranteed Minimum Values at VHF Frequencies

M4A sot23

Abstract: DIODE M4A MV209 MV209 diode marking code m4a
Contextual Info: MMBV109LT1, MV209 Preferred Devices Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid−state reliability in replacement of mechanical tuning methods. Features • • • • High Q with Guaranteed Minimum Values at VHF Frequencies

DIODE M4A

Abstract: M4A sot23
Contextual Info: ON Semiconductort MMBV109LT1, MV209 Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid−state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT4401 Features • • x • x • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT4401 Features • • x • x • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT4401 Features • • • x • x • Halogen free available upon request by adding suffix "-HF" Surface Mount SOT-23 Package

MA793

Abstract: MA3Z792 MA3Z793 MA792
Contextual Info: Schottky Barrier Diodes SBD MA3Z793 (MA793) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.3+0.1 –0 3 5˚ • Two MA3Z792 (MA792) is contained in one package (series connection) • IF(AV) = 100 mA rectification is possible

Contextual Info: Schottky Barrier Diodes SBD MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X786 (MA786) is contained in one package (series

DIODE M4A

Abstract: MA791 MA3X786 MA3X791 MA786
Contextual Info: Schottky Barrier Diodes SBD MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X786 (MA786) is contained in one package (double

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT4401 Features • • • x • x • • • Halogen free available upon request by adding suffix "-HF"

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3Z793 (MA793) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3Z792 (MA792) is contained in one package (series connection)

Panasonic super a series

Abstract: MA3Z792 MA3Z793 MA792 MA793
Contextual Info: Schottky Barrier Diodes SBD MA3Z793 (MA793) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) Reverse voltage (DC) Repetitive peak reverse-voltage Peak forward

DIODE M4A

Abstract: Panasonic super a series MA3Z793 MA793
Contextual Info: Schottky Barrier Diodes SBD MA3Z793 (MA793) Silicon epitaxial planar type Unit : mm 2.1 ± 0.1 For super-high speed switching circuit For small current rectification + 0.1 • Two MA3Z792s diodes (series connection) are contained in the Smini type 3-pin package

MA3X786

Abstract: MA3X791 MA786 MA791
Contextual Info: Schottky Barrier Diodes SBD MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Repetitive peak reverse-voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3Z7930G Silicon epitaxial planar type For super high speed switching For small current rectification • Features ■ Package • Two MA3Z792 (MA792) is contained in one package (series connection)

DIODE M4A

Abstract: Panasonic super a series MA3X791 MA791
Contextual Info: Schottky Barrier Diodes SBD MA3X791 (MA791) Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Single Average forward current Single Unit VR 30 V VRRM 30 V IFM 300 mA Series*2

MA3X786

Abstract: MA3X791 MA786 MA791
Contextual Info: Schottky Barrier Diodes SBD MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Repetitive peak reverse-voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3Z793 (MA793) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3Z792 (MA792) is contained in one package (series connection)

MA3Z792

Abstract: MA3Z793 MA792 MA793 SKH00098CED
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3Z793 (MA793) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te