MARKING M1T Search Results

A09 N03 MOSFET

Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Contextual Info: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04

78L05 sot-89

Abstract: sot89 78l05 marking 78L05M SOT89 78L05 78l05 so8 78L05 78l05 sot89 78l05 so-8 APE78L05 marking code diode R12
Contextual Info: Advanced Power Electronics Corp. APE78L05 5V POSITIVE VOLTAGE REGULATOR FEATURES DESCRIPTION The APE78L05 is three-terminal positive regulator. The APE78L05 can be used as Zener diode/resistor combination replacement. It offers an effective output impedance

sot89 78l05 marking

Abstract: 78L05 SOT-89 78l05 011 78L05M 78L05 SOT89 78L05 78l05 sot89 78L05 SOT89 MARKING CODE 78l05 so-8 marking NC SOT-89
Contextual Info: Advanced Power Electronics Corp. APE78L05 5V POSITIVE VOLTAGE REGULATOR FEATURES DESCRIPTION The APE78L05 is three-terminal positive regulator. The APE78L05 can be used as Zener diode/resistor combination replacement. It offers an effective output impedance

M1T diode

Abstract: m1t marking marking m1t
Contextual Info: MA111 Schottky Barrier Diodes SBD MA724 Silicon epitaxial planer type Unit : mm For super high-speed switching circuit For small current rectification +0.2 2.8 –0.3 +0.1 0.4 –0.05 1.45 1 0.5 0.95 2 3 0.6 –0 0.2 200mA rectification possible +0.1 +0.1

m1t marking

Contextual Info: Schottky Barrier Diodes SBD MA4X724 (MA724) Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For super high speed switching For small current rectification 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 4 2 5° 0.5R 2.8+0.2 –0.3 3 1 (0.65) (0.2) 0.60+0.10

MA4X724

Abstract: M1T diode
Contextual Info: Schottky Barrier Diodes SBD MA4X724 Silicon epitaxial planar type Unit : mm + 0.2 For super-high speed switching circuit For small current rectification 2.8 − 0.3 + 0.25 0.65 ± 0.15 0.65 ± 0.15 + 0.1 0.4 − 0.05 1.45 1.5 − 0.05 1 0.5 0.95 4 0.95 2

Contextual Info: TA4000F TOSHIBA TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT I A 4 Q Q Q SILICON MONOLITHIC F V H F -U H F WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Band Width 700MHz Min. @3dB down • Low Noise 4dB (Typ.) @ f =400MHz • Small Package PIN ASSIGNMENT (TOP VIEW)

dc m7 footprint

Abstract: sma M7 diode sma M4 diode sma m7 marking of m7 diodes diode dc components m7 footprint M1-M7 Rectifier Diode diode m7 M7 diode footprint wave soldering M7 DO-214AC
Contextual Info: M1 – M7 WTE POWER SEMICONDUCTORS 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Power Loss A Built-in Strain Relief

Matsua M1T

Abstract: M1T diode
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4X724 (MA724) Silicon epitaxial planar type For super high speed switching For small current rectification Unit: mm 2.90+0.02 –0.05 1.9±0.2 2 Peak forward current

Matsushita M1T

Abstract: MA3X721 MA4X724 MA721 MA724
Contextual Info: Schottky Barrier Diodes SBD MA4X724 (MA724) Silicon epitaxial planar type For super high speed switching For small current rectification Unit: mm 2.90+0.02 –0.05 1.9±0.2 2 Peak forward current Single VR 30 V VRRM 30 V IFM 300 mA Forward current (Average)

MA4X724

Abstract: MA724 M1T diode
Contextual Info: Schottky Barrier Diodes SBD MA4X724 (MA724) Silicon epitaxial planar type For super-high speed switching circuit For small current rectification Unit : mm + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 0.65 ± 0.15 + 0.1 • Features 0.4 − 0.05 1.45 1.5 − 0.05

Matsua M1T

Abstract: m1t marking
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4X724 (MA724) Silicon epitaxial planar type For super high speed switching For small current rectification Unit: mm 2.90+0.02 –0.05 1.9±0.2 2 Peak forward current

MA3X721

Abstract: MA4X724 MA721 MA724 MA102TA
Contextual Info: Schottky Barrier Diodes SBD MA4X724 (MA724) Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For super high speed switching For small current rectification 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 4 2 5° 0.5R 2.8+0.2 –0.3 3 1 (0.65) (0.2) 0.60+0.10

Matsua M1T

Abstract: Matsushita M1T MA3X721 MA4X724 MA721 MA724 M1T diode
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4X724 (MA724) Silicon epitaxial planar type For super high speed switching For small current rectification Unit: mm 2.90+0.02 –0.05 1.9±0.2 0.16+0.1 –0.06 M

MA3X721

Abstract: MA4X7240G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4X7240G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For super high speed switching For small current rectification • Features ■ Package

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4X724 (MA724) Silicon epitaxial planar type For super high speed switching For small current rectification Unit: mm 2.90+0.02 –0.05 1.9±0.2 • Two isolated elements are contained in one package, allowing

MA3X721

Abstract: MA4X7240G M1T diode
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4X7240G Silicon epitaxial planar type For super high speed switching For small current rectification • Features ■ Package • Two isolated elements are contained in one package, allowing

Contextual Info: Advanced Power Electronics Corp. APE8865 300mA LOW DROPOUT LINEAR REGULATOR FEATURES DESCRIPTIOON The APE8865 series are low dropout, positive linear regulators with very low quiescent current. The APE8865 can supply 300mA output current with a low dropout voltage at about 250mV.

Contextual Info: MICRON E TECHNOLOGY INC SSE ]> O G D S b b ^ 2G 4 • URN MT5C1009 883C 128K X 8 SRAM ICRGN MILITARY SRAM 128K x 8 SRAM AVAILABLE AS MILITARY SPECIFICATION S • • • • SMD 5962-89598, Class M JAN 5962-89598, Class B MIL-STD-883, Class B Radiation tolerant consult factory

YUSHIROKEN

Abstract: cutting oils Yushiron Oil No.2 AC small capacitive oil level sensor s46d yushiroken EC50 E3ZM-CT67 E3ZM-CR86 automotive oil pressure electronic sensor SUS316L E3ZM-CL84H
Contextual Info: Stainless Steel Housing Oil-resistant, Robust, Compact Photoelectric Sensor with Built-in Amplifier E3ZM-C A New Photoelectric Sensor Designed for the Automotive and Machine Tool Industries Features 1 Oil-resistant, Robust, and Compact IP67g Degree of Protection

2N1048A

Abstract: 2N1049A 2N1049 2N1047A 2N1050A MARKING LI ORT
Contextual Info: M IL-S-19500/176B 13 December 1971 OTTTÌP D O P nXm11U /l OU £'U1\UUL' MIL-S-19500/176A 10 November 1965 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N1047A, 2N1048A, 2N1049A AND 2N1050A This specification is mandatory for use by all D epart­

ay 9j

Abstract: MARKING CODE yac OP44 E3-E12 ITT doeh
Contextual Info: M IL SPECS IC 1 □00D15S O O ab?11!! b TDfCH-'PgUNDT MIL-M-38510/122A 15 September 1989 w n r m r n r e -MIL-M-38510/122 9 A p r i l 1980 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, HIGH SLEW RATE OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON This s p e c i f i c a t i o n 1s approved f o r use by a l l Depart­

Contextual Info: APPENDIX “A” Contents: Gender Specification Coax Contacts Dielectric Withstanding Voltage Chart Crimp Tool Information Chart Cable Selection Guide VSWR & Transmitted Power Relationships GENDER SPECIFICATION COAX CONTACTS =□ SERIES PDM 950 MHz SLIDE-ON

YUSHIROKEN

Abstract: CSF-9000 DIN 40050 Part 9 yushiroken EC50 cutting oils Yushiron Oil No.2 AC CS-68JS-1 YUSHIRO 770TG
Contextual Info: Oil-resistant, Robust, Compact Photoelectric Sensor Stainless Housing and Built-in Amplifier E3ZM-C CSM_E3ZM-C_DS_E_2_1 Designed for the Automotive and Machine Tool Industries • Oil-resistant, water-resistant, robust body made of stainless steel. • Same size as the E3Z: The smallest square metal photoelectric