MARKING L4 MOSFET SOT23 Search Results

SI2304BDS

Contextual Info: Si2304BDS Vishay Siliconix New Product N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.070 @ VGS = 10 V 3.2 0.105 @ VGS = 4.5 V 2.6 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2304BDS (L4)* *Marking Code Ordering Information: Si2304BDS-T1

Si2304BDS

Abstract: Si2304BDS-T1
Contextual Info: Si2304BDS Vishay Siliconix New Product N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.070 @ VGS = 10 V 3.2 0.105 @ VGS = 4.5 V 2.6 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2304BDS (L4)* *Marking Code Ordering Information: Si2304BDS-T1—E3

P8207

Abstract: bat545 LTC3722-1 Si7852DP datasheet 4440 16SP180M LTC4440 LTC4440EMS8E LTC4440ES6 TPSE686M020R0150
Contextual Info: Final Electrical Specifications LTC4440 High Speed, High Voltage High Side Gate Driver October 2003 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Wide Operating VIN Range: Up to 80V Rugged Architecture Tolerant of 100V VIN Transients Powerful 1.5Ω Driver Pull-Down

LTC4440-5

Abstract: LTC3722-2 PA0801 500w Full bridge transformer LTC3722-1 P8207 16TQC47M 1mH boost inductor dc to ac boost converter 500w LTC3723EGN-1
Contextual Info: LTC4440-5 High Speed, High Voltage, High Side Gate Driver U FEATURES DESCRIPTIO • The LTC 4440-5 is a high frequency high side N-channel MOSFET gate driver that is designed to operate in applications with VIN voltages up to 60V. The LTC4440-5 can also withstand and continue to function during 80V VIN transients. The powerful driver capability reduces switching

LTC4440-5

Contextual Info: LTC4440-5 High Speed, High Voltage, High Side Gate Driver FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Wide Operating VIN Range: Up to 60V Rugged Architecture Tolerant of 80V VIN Transients Powerful 1.85 Driver Pull-Down with 6V Supply

LTC4440-5

Contextual Info: LTC4440 High Speed, High Voltage High Side Gate Driver Description Features Wide Operating VIN Range: Up to 80V n Rugged Architecture Tolerant of 100V V IN Transients n Powerful 1.5Ω Driver Pull-Down n Powerful 2.4A Peak Current Driver Pull-Up n 7ns Fall Time Driving 1000pF Load

P8207

Abstract: LTC4440-5 PA0801 LTC4440EMS8E-5 LTC4440ES6-5 LTC3722-1 LTC4440 PA1294 PA0785 push-pull converter 80V 15A
Contextual Info: LTC4440-5 High Speed, High Voltage, High Side Gate Driver U FEATURES DESCRIPTIO • The LTC 4440-5 is a high frequency high side N-channel MOSFET gate driver that is designed to operate in applications with VIN voltages up to 60V. The LTC4440-5 can also withstand and continue to function during 80V VIN transients. The powerful driver capability reduces switching

P8207

Contextual Info: LTC4440 High Speed, High Voltage High Side Gate Driver FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Wide Operating VIN Range: Up to 80V Rugged Architecture Tolerant of 100V VIN Transients Powerful 1.5Ω Driver Pull-Down Powerful 2.4A Peak Current Driver Pull-Up

Si7852DP

Abstract: 4w sot-23 marking LTC4440-5
Contextual Info: LTC4440-5 High Speed, High Voltage, High Side Gate Driver Features Description n n n The LTC 4440-5 is a high frequency high side N-channel MOSFET gate driver that is designed to operate in applications with VIN voltages up to 60V. The LTC4440-5 can also withstand and continue to function during 80V VIN

P8207

Abstract: PA0785 PA0801 ltzy PA0805 CSE 910 4.5V TO 100V INPUT REGULATOR PA-080 LTC4440EMS8E LTC4440ES6
Contextual Info: LTC4440 High Speed, High Voltage High Side Gate Driver U FEATURES DESCRIPTIO • The LTC 4440 is a high frequency high side N-channel MOSFET gate driver that is designed to operate in applications with VIN voltages up to 80V. The LTC4440 can also withstand and continue to function during 100V VIN transients. The powerful driver capability reduces switching

Contextual Info: SUM60N04-12LT Vishay Siliconix Temperature Sensing MOSFET, N-Channel 40-V D-S FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.009 at VGS = 10 V 60a 0.012 at VGS = 4.5 V 60 Notes: a. Package Limited. DESCRIPTION The SUM60N04-12LT is a 40 V N-Channel, 15 mΩ logic

Contextual Info: SUM60N04-12LT Vishay Siliconix Temperature Sensing MOSFET, N-Channel 40-V D-S FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.009 at VGS = 10 V 60a 0.012 at VGS = 4.5 V 60 Notes: a. Package Limited. DESCRIPTION The SUM60N04-12LT is a 40 V N-Channel, 15 mΩ logic

NIPPON CAPACITORS

Abstract: Transistor J438 CRCW08051001FKEA MRF21010
Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

CRCW08051001FKEA

Abstract: TLX8-0300 C-XM-99-001-01 pd cms NIPPON CAPACITORS bourns 3224w FM LDMOS freescale transistor atc100B100GT500XT marking us capacitor pf l1 MRF21010
Contextual Info: Document Number: MRF21010-2 Rev. 11, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor NOT RECOMMENDED FOR NEW DESIGN Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

half bridge converter 2kw

Abstract: TTI8696 2kw power supply Full-bridge converter PA0801 P8207 f 1k MD 250v f 47k MD 250v 2kw mosfet pa1294.650
Contextual Info: LTC3901 Secondary Side Synchronous Driver for Push-Pull and Full-Bridge Converters U FEATURES DESCRIPTIO • The LTC 3901 is a secondary side synchronous rectifier driver designed to be used in isolated push-pull and fullbridge converter power supplies. The chip drives two

CRCW08051001FKEA

Abstract: MRF21010 r1 marking us capacitor pf l1 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LR1 T491D106K035AT ONsemi marking C10 MRF21010
Contextual Info: Document Number: MRF21010-1 Rev. 10, 10/2008 Freescale Semiconductor Technical Data MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

CRCW08052201FKEA

Abstract: CRCW080510R0FKE MRF21010-1 MRF21010
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21010-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET • Typical W-CDMA Performance: -45 dBc ACPR, 2170 MHz, 28 Volts,

Contextual Info: LTC1706-82 VID Voltage Programmer for Intel VRM9.0/9.1 U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ The LTC 1706-82 is a precision, digitally programmed, resistive ladder which adjusts the output of any 0.8V referenced regulator. Depending on the state of the five

LTC1628

Abstract: LTC1706 LTC1629 LTC1702 LTC1706-82 LTC1735 LTC1735-1 LTC1929 LTC3729 LTC3732
Contextual Info: LTC1706-82 VID Voltage Programmer for Intel VRM9.0/9.1 U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ The LTC 1706-82 is a precision, digitally programmed, resistive ladder which adjusts the output of any 0.8V referenced regulator. Depending on the state of the five

TOP MARKING F2 ROHM SOT23

Abstract: cl21b103kbnc MARKING G7 SOT23 MOSFET
Contextual Info: PD - 94089 iP2001 Synchronous Buck Multiphase Optimized BGA Power Block Integrated Power Semiconductors, Drivers & Passives Features: • • • • • 20A continuous output current with no derating up to TPCB = 90°C Very small 11mm x 11mm x 3mm profile

l4 marking code

Contextual Info: Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.070 @ VGS = 10 V 3.2 0.105 @ VGS = 4.5 V 2.6 D RoHS Compliant Qg (Typ) Product Is Completely Pb-free 26 2.6 TO-236 (SOT-23) G 1 S 2 3 D Top View

Contextual Info: Si2304BDS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

816C IC 4 pin

Abstract: CL21B103KB CL21B1 MCH215A220JK marking 0123 rm73b1j510j
Contextual Info: PD - 94089C iP2001 Synchronous Buck Multiphase Optimized BGA Power Block Integrated Power Semiconductors, Drivers & Passives Features: • • • • • 20A continuous output current with no derating up to TPCB = 90°C Very small 11mm x 11mm x 3mm profile

Si2304BDS

Abstract: Si2304BDS-T1-E3
Contextual Info: Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free Option Available Qg (Typ.) RoHS 2.6 COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View