MARKING L17 Search Results

CCV Series

Contextual Info: Organic Conductive Polymer Capacitors CCV CCV Series Features ‧105℃, 2,000 hours assured ‧Ultra low ESR, solid capacitors of SMD type ‧RoHS Compliance Marking color: Blue Specifications Items Category Temperature Range Capacitance Tolerance Leakage Current at 20℃ *

Contextual Info: CVH SMD Aluminum Electrolytic Capacitors CVH Series Features ‧4φ ~ 18φ, 105℃, 2,000 ~ 5,000 hours assured ‧Large capacitance with ultra low impedance capacitors ‧Designed for surface mounting on high density PC board ‧RoHS Compliance Marking color: Black

Contextual Info: _ i_ 2 3 REVISIONS c^!5u? jnw SJT e rTe'wle'fleyIntamotfii^^BSi’docJM nt. a STM DESCRIPTION ECN DATE APPROVED 11/26/07 A D -S U B TECHNICAL DATA SHELL : BODY : D JL CONTACTS : BOARDLOCK: REAR INSERT : GROUNDING : ELECTRICAL : CLIMATIC : c MARKING :

5800c

Abstract: bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800
Contextual Info: TM5500/TM5800 Version 1.0 Data Book Crusoe Processors Described in this Document Processor SKU Memory Interface Package Marking L2 Cache Max Core Core Frequency Voltage Tj Max TDP DDR SDR TM5800-933 CoolRun80 DDR/SDR 5800C093310 512 KBytes 933 MHz 0.90-1.35 V

bios programmer

Abstract: sdr sdram pcb layout TM5800-1000-LP processor cross reference cdq42 5800P100021 5800R100021 TM5500 TM5800 16M X 32 SDR SDRAM
Contextual Info: TM5800 Version 2.1 Data Book Crusoe Processors Described in this Document Processor Memory Package Marking L2 Cache Max Core Frequency Core Voltage TM5800-1000-ULP CoolRun80 DDR/SDR 5800T100021 512 KBytes 1000 MHz TM5800-1000-VLP CoolRun80 DDR/SDR Tj Max TDP

block diagram of crusoe processor

Abstract: bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667
Contextual Info: Crusoe SE TM55E/TM58E Version 2.1 Data Book Crusoe SE Embedded Processors Described in this Document Processor SKU Memory Package Marking L2 Cache Max Core Core Frequency Voltage Temp Range TDP DDR SDR TM58EX-933 100°C DDR/SDR 58EXAE093321 512 KBytes 933 MHz

a3101

Contextual Info: 1 1 M3 $ r 04.30 12.50 1 3.50 I 05.5 2 1 REVISIONS SYM DATE DESCRIPTION ECN APPROVED 31/01/07 A D -SU B TECHNICAL DATA D Hood, plastic. For 9 positions D - S U B connectors MATERIAL :black thermoplastic CLIMATIC : Temperature range - 3 0 ’C up to 90"C MARKING : Amphenol— . Series No.

Contextual Info: DATE M24k 三社日出に 古 APr . 九 Apr 1111Gol o 三官;同出叶ト千 170; !: ; : ; : ; ; ; : : ! ; 4 f H 7 4 ; 叫 す 了行寸 1 . 1 2012 ト 子 2 13 l Lma;， :;l17¥51:l: 1 川県辛』ι 出二斗; ￨ ト J : : : : : ; ; : : ! : : 2

Contextual Info: APPROVED PD - TBD AUTOMOTIVE MOSFET IRFR540Z IRFU540Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D VDSS = 100V RDS on = 28.5mΩ

Contextual Info: IRFR540Z IRFU540Z Features D-Pak IRFR540Z Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l I-Pak IRFU540Z Description Specifically designed for Automotive applications,

IRFR540Z

Abstract: IRFU540Z P916A
Contextual Info: APPROVED PD - TBD AUTOMOTIVE MOSFET IRFR540Z IRFU540Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D VDSS = 100V RDS on = 28.5mΩ

Contextual Info: IRFR1010Z IRFU1010Z I-Pak IRFU1010Z D-Pak IRFR1010Z Features Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l Description Specifically designed for Automotive applications,

Contextual Info: IRFR2307Z IRFU2307Z D Features Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax VDSS = 75V l RDS on = 16mΩ G ID = 42A S Description D-Pak IRFR2307Z Specifically designed for Automotive applications,

IRFR1010Z

Abstract: IRf 48 MOSFET IRFU1010Z
Contextual Info: PD - 96897 AUTOMOTIVE MOSFET IRFR1010Z IRFU1010Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D VDSS = 55V RDS on = 7.5mΩ G

IRLR3705Z

Abstract: IRLU3705Z irlru3705z
Contextual Info: PD - 96896 AUTOMOTIVE MOSFET IRLR3705Z IRLU3705Z Features Logic Level Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET l l Description D VDSS = 55V

Contextual Info: PD - 96924 AUTOMOTIVE MOSFET Features IRFR48Z IRFU48Z HEXFET Power MOSFET Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l D VDSS = 55V RDS on = 11mΩ G Description

Contextual Info: PD - 96896 AUTOMOTIVE MOSFET IRLR3705Z IRLU3705Z Features HEXFET Power MOSFET Logic Level Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D VDSS = 55V RDS on = 8.0mΩ

TH 2190 mosfet

Abstract: th 2190 IRFR2307Z IRFU2307Z
Contextual Info: PD - 96910 AUTOMOTIVE MOSFET IRFR2307Z IRFU2307Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D RDS on = 16mΩ G Description

VG 96924

Abstract: IRFR48Z IRFU48Z
Contextual Info: PD - 96924 AUTOMOTIVE MOSFET Features IRFR48Z IRFU48Z HEXFET Power MOSFET Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l D VDSS = 55V RDS on = 11mΩ G Description

TH 2190 mosfet

Abstract: IRFu2307z IRFR2307Z
Contextual Info: PD - 96910 AUTOMOTIVE MOSFET IRFR2307Z IRFU2307Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D RDS on = 16mΩ G Description

IRLR3705Z

Abstract: IRLU3705Z irlru3705z
Contextual Info: PD - 96896 AUTOMOTIVE MOSFET IRLR3705Z IRLU3705Z Features Logic Level Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET l l Description D VDSS = 55V

IRFR1010Z

Contextual Info: PD - 96897 AUTOMOTIVE MOSFET IRFR1010Z IRFU1010Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D VDSS = 55V RDS on = 7.5mΩ G

VG 96924

Abstract: IRFR48Z IRFU48Z
Contextual Info: PD - 96924 AUTOMOTIVE MOSFET Features IRFR48Z IRFU48Z HEXFET Power MOSFET Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l D VDSS = 55V RDS on = 11mΩ G Description

Contextual Info: PD - 96910 AUTOMOTIVE MOSFET IRFR2307Z IRFU2307Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D VDSS = 75V RDS on = 16mΩ G