MARKING L07 Search Results

part MARKING k48

Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Contextual Info: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E

A09 resistor network

Abstract: B1578 L05 MARKING
Contextual Info: MRP precision metal film resistor SIP network NEW features • • • • • Custom design network Ultra-precision performance for precision analog circuits Tolerance to ±0.1%, matching to 0.05% T.C.R. to ±25ppm/°C, tracking to 2ppm/°C Marking: Black body color with white marking

Contextual Info: THIS DRAWING IS UNPUBLISHED. M . COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - LOC DIST REVISIONS ALL RIGHTS RESERVED. p HB D LTR DESCRIPTION B MARKING CHANGE B1 CORRECT MISTAKE C CHANGE NEW LOGO DATE DWN ECO ECO— 07— 013869 25-M AY-07 XN.Z

NTC 1K lm 102

Contextual Info: A COMPANY OF MODEL SSN “SOFT-START” NTC Therm istors Prelim inary For Inrush C u rre n t Suppressing D evices 1.5 A to 2 5 A a t 6 5 C FEATURES • Switching power supply applications • Special marking is available upon request • Protective silicone coating is standard and has a nominal thickness of

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

L07ESDL5V0C3

Contextual Info: LITE-ON SEMICONDUCTOR L07ESDL5V0C3-2 STAND-OFF VOLTAGE – 5.0 Volts POWER DISSIPATION – 70 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION Thee L07ESDL5V0C3-2 is a low capacitance Electrostatic Discharge ESD protection diode in a SOT-23 (TO-236AB) small SMD plastic

RJ45 LAN ESD

Contextual Info: LITE-ON SEMICONDUCTOR L07ESDL5V0C3-2 STAND-OFF VOLTAGE – 5.0 Volts POWER DISSIPATION – 70 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION Thee L07ESDL5V0C3-2 is a low capacitance Electrostatic Discharge ESD protection diode in a SOT-23 (TO-236AB) small SMD plastic

smd marking gc5

Abstract: L07E
Contextual Info: LITE-ON SEMICONDUCTOR L07ESDL5V0C3-2 STAND-OFF VOLTAGE – 5.0 Volts POWER DISSIPATION – 70 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION Thee L07ESDL5V0C3-2 is a low capacitance Electrostatic Discharge ESD protection diode in a SOT-23 (TO-236AB) small SMD plastic

Contextual Info: RF CERAMIC CHIP INDUCTORS High frequency multi-layer chip inductors feature a monolithic body made of low loss ceramic and high conductivity metal electrodes to achieve optimal high frequency performance. These RF chip inductors are compact in size and feature lead-free tin

L-07C

Abstract: marking 1N3 1N5 diode L07C 2n2 j 100 L-07C10NJV6T
Contextual Info: RF CERAMIC CHIP INDUCTORS High frequency multi-layer chip inductors feature a monolithic body made of low loss ceramic and high conductivity metal electrodes to achieve optimal high frequency performance. These RF chip inductors are compact in size and feature lead-free tin

Contextual Info: RF CERAMIC CHIP INDUCTORS High frequency multi-layer chip inductors feature a monolithic body made of low loss ceramic and high conductivity metal electrodes to achieve optimal high frequency performance. These RF chip inductors are compact in size and feature lead-free tin

Contextual Info: RF CERAMIC CHIP INDUCTORS High frequency multi-layer chip inductors feature a monolithic body made of low loss ceramic and high conductivity metal electrodes to achieve optimal high frequency performance. These RF chip inductors are compact in size and feature lead-free tin

L-07C

Abstract: marking code 33n 3n3 100
Contextual Info: RF ceRaMic chiP inDUcToRs High frequency multi-layer chip inductors feature a monolithic body made of low loss ceramic and high conductivity metal electrodes to achieve optimal high frequency performance . These RF chip inductors are compact in size and feature lead-free tin

R22-R27

Contextual Info: RF Ceramic Chip Inductors High frequency multi-layer chip inductors feature a monolithic body made of low loss ceramic and high conductivity metal electrodes to achieve optimal high frequency performance. These RF chip inductors are compact in size and feature lead-free tin

sf 1020

Contextual Info: KOA SPEER ELECTRONICS, INC. SS-233 W Leaded Resettable PPTC NEAxial AHA 5/01/02 CERTIFIED Polymeric Positive Temp. Coefficient Devices SFAL 1. Features • Axial Leaded package ■ Fully compatible with current industry standards ■ Very low internal resistance

marking L07

Abstract: CMLT2907A
Contextual Info: CMLT2907A SURFACE MOUNT DUAL PNP SILICON TRANSISTOR SOT-563 CASE MAXIMUM RATINGS: TA=25°C SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Power Dissipation PD Operating and Storage Junction Temperature

2907a

Abstract: CMLT2907A MARKING 2907A
Contextual Info: Central CMLT2907A SURFACE MOUNT PICOminiTM DUAL PNP SILICON TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2907A consists of two individual, isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563

2907a

Abstract: CMLT2907A MARKING 2907A
Contextual Info: CMLT2907A SURFACE MOUNT DUAL PNP SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2907A consists of two individual, isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563

Contextual Info: CMLT2907A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON DUAL PNP TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2907A consists of two individual, isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface

Contextual Info: Central" CMLT2907A Semiconductor Corp. SURFACE MOUNT PICOmini DUAL PNP SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMLT2907A consists of two individual, isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563

NUR460P

Contextual Info: NUR460P Ultrafast power diode 3 January 2014 Product data sheet 1. General description Ultrafast power diode in a SOD141 DO-201AD axial lead plastic package. 2. Features and benefits • • • • • • • Axial leaded plastic package Fast switching

Contextual Info: Central" CMLT2907A Sem iconductor Corp. SURFACE MOUNT PICOmini DUAL PNP SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMLT2907A consists of two individual, isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563

Contextual Info: 4 FO-55112-C HONEYWELL PART NUMBER 3 2 DEFINITIONS 1 - % LINEARITY SHALL BE THE QUOTIENT OF THE MEASURED OUTPUT DEVIATION FROM THE THE MEASURED TEMPERATURE TO THE FULL SCALE OUTPUT SPAN 2 - % LINEARITY = MEASURED VOLTAGE @ T - INDEX VOLTAGE [DEFINED BY BEST FIT LINE

k840

Contextual Info: RF Wirewound Chip Inductors These high frequency High-Q chip inductors feature a monolithic body made of low loss ceramic wound with wire to achieve optimal high frequency performance. These RF chip inductors are compact in size and are provided on tape and reel packaging which makes them ideal for high volume RF