MARKING L USC DIODE Search Results

diode MARKING CODE A9

Abstract: 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking
Contextual Info: 4. List of Principal Characteristics of Diodes 4. List o f Principal C h a r a c t e r istic s o f D io d e s * S c h o ttk y b a r r i e r diode. 59 4. List of Principal Characteristics o f Diodes U nit : mm u se S-M IN I U SM SS M 1 1 125*8:i s 5 H- pl *il"

1117 S 3,3 Transistor

Abstract: Hall Sensor 4-lead S-Mini 1117 S Transistor transistor 1345
Contextual Info: CONTENTS PREFACE Related Document System List of Small Signal Transistors & Diodes Surface Mount Devices . 5 1. Using Device Selection Flowchart . 15 General Purpose Low Frequency Transistor SelectionMethod .

diode yz zener

Abstract: 2A 5v ZENER DIODE Z6 marking 6 marking Z6
Contextual Info: KDZ2.0V-33V SEMICONDUCTOR ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES B • Small Package : USC • Nominal Voltage Tolerance About ±6% . MAXIMUM RATING Ta=25°C

KDR728

Abstract: MARKING L USC diode
Contextual Info: SEMICONDUCTOR KDR728 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. L K A H F ᴌSmall Package : USC. 1 E ᴌLow Forward Voltage : VF 2 =0.42(Typ.) G B CATHODE MARK FEATURES 2 J D C I MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL

KDR784

Contextual Info: SEMICONDUCTOR KDR784 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. CATHODE MARK L K A ᴌLow Forward Voltage : VF 3 =0.42(Typ.) 1 E FEATURES G B H F ᴌSmall Package : USC. 2 J D C I MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC DIM

KDR729

Contextual Info: SEMICONDUCTOR KDR729 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. L K A ᴌIO=200mA rectification possible. H F ᴌSmall Package : USC. 1 E ᴌLow Forward Voltage : VF 4 =0.43(Typ.) G B CATHODE MARK FEATURES 2 J D C I MAXIMUM RATING (Ta=25ᴱ)

KDV175

Contextual Info: SEMICONDUCTOR KDV175 TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE VHFᴕUHF BAND RF ATTENUATOR APPLICATIONS. AGC FOR AM/FM TUNER. CATHODE MARK L K H F ᴌLow Series resistance : rS=7[ή] Typ. . A ᴌLow Capacitance : CT=0.25[pF] (Typ.) 1 E FEATURES G

Contextual Info: SE M IC O N D U C T O R BAV21W TECHN ICAL DATA SILICON EPITAXIAL PLANAR DIODE High Voltage Switching. FEATURES [I • High Reliability. • Small surface mounting type USC . 1 MAXIMUM RATING (Ta=25°C) SYMBOL RATING UNIT Vrm 300 V B 2.50 ¿0.1 1.25¿0.05

AM/FM

Abstract: KDV175
Contextual Info: SEMICONDUCTOR KDV175 TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE VHF～UHF BAND RF ATTENUATOR APPLICATIONS. AGC FOR AM/FM TUNER. CATHODE MARK L K H F ・Low Series resistance : rS=7[Ω] Typ. . A ・Low Capacitance : CT=0.25[pF] (Typ.) 1 E FEATURES G

KDR377

Abstract: diode schottky 40v 30ma
Contextual Info: SEMICONDUCTOR KDR377 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. L K A H F ᴌSmall Package : USC. 1 E ᴌLow Forward Voltage : VF 2 =0.43V (Typ.) G B CATHODE MARK FEATURES 2 J D C MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC I

zener diode numbering system

Abstract: KDZ110VW bidirectional zener diode "bidirectional zener diode"
Contextual Info: SEMICONDUCTOR KDZ110VW TECHNICAL DATA Bi-DIRECTIONAL ZENER DIODE SILICON EPITAXIAL PLANAR DIODE EL Driver System Application. G B E ・Small Package : USC A L K 1 FEATURES H F ・Sharp breakdown characteristic. ・Normal Voltage Tolerance About ±5.0% 2 J

ZENER DIODE with Iz max Iz min

Abstract: KDZ100VW TJ B C
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDZ100VW Bi-DIRECTIONAL ZENER DIODE SILICON EPITAXIAL PLANAR DIODE EL Driver System Application. G B E Small Package : USC A L K 1 FEATURES H Normal Voltage Tolerance About F Sharp breakdown characteristic. 5.0% 2 J D C I MAXIMUM RATING Ta=25

KDR377

Contextual Info: SEMICONDUCTOR KDR377 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. K L A H F ・Small Package : USC. 1 E ・Low Forward Voltage : VF 2 =0.43V (Typ.) G B CATHODE MARK FEATURES 2 J D C MAXIMUM RATING (Ta=25℃) CHARACTERISTIC I

KDZ100VW

Contextual Info: SEMICONDUCTOR KDZ100VW TECHNICAL DATA Bi-DIRECTIONAL ZENER DIODE SILICON EPITAXIAL PLANAR DIODE EL Driver System Application. G K B E ・Small Package : USC A L 1 FEATURES H F ・Sharp breakdown characteristic. ・Normal Voltage Tolerance About ±5.0% 2 J

KDR412

Contextual Info: SEMICONDUCTOR KDR412 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW POWER RECTIFICATION FOR SWITCHING POWER SUPPLY. CATHODE MARK L K H F Low Forward Voltage : VF max=0.5V A Small Surface Mounting Type. USC 1 E FEATURES G B High Reliability 2 J D C I CONSTRUCTION

KDV358

Contextual Info: SEMICONDUCTOR KDV358 TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. L K H F ・Small Package : USC. A ・Low Series Resistance. : rS=0.4Ω Max. 1 E ・Good C-V Linearity. G B CATHODE MARK FEATURES 2 J D C

BAV21W

Abstract: VR104
Contextual Info: SEMICONDUCTOR BAV21W TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE High Voltage Switching. L K A H F ・Small surface mounting type USC . 1 E ・High Reliability. G B CATHODE MARK FEATURES 2 J D C I MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Maximum (Peak) Reverse Voltage

vr 1K

Abstract: KDR412
Contextual Info: SEMICONDUCTOR KDR412 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW POWER RECTIFICATION FOR SWITCHING POWER SUPPLY. CATHODE MARK L K H F ・Low Forward Voltage : VF max=0.5V A ・Small Surface Mounting Type. USC 1 E FEATURES G B ・High Reliability 2 J D

KDR728

Contextual Info: SEMICONDUCTOR KDR728 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. L K A H F ・Small Package : USC. 1 E ・Low Forward Voltage : VF 2 =0.42(Typ.) G B CATHODE MARK FEATURES 2 J D C I MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL

Contextual Info: SEMICONDUCTOR KDR412 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW POWER RECTIFICATION FOR SWITCHING POWER SUPPLY. L A H F ・Low Forward Voltage : VF max=0.5V 1 E ・Small Surface Mounting Type. USC K CATHODE MARK FEATURES G B ・High Reliability 2 J D

KDR728

Contextual Info: SEMICONDUCTOR KDR728 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. L K A H F Small Package : USC. 1 E Low Forward Voltage : VF 2 =0.42(Typ.) G B CATHODE MARK FEATURES 2 J D MAXIMUM RATING (Ta=25 CHARACTERISTIC C I ) SYMBOL RATING

MARKING L USC diode

Abstract: bidirectional zener diode
Contextual Info: SEMICONDUCTOR KDZ110VW TECHNICAL DATA Bi-DIRECTIONAL ZENER DIODE SILICON EPITAXIAL PLANAR DIODE EL Driver System Application. G K B E ・Small Package : USC A L 1 FEATURES H F ・Sharp breakdown characteristic. ・Normal Voltage Tolerance About ±5.0% 2 J

KDV175

Contextual Info: SEMICONDUCTOR KDV175 TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE VHF～UHF BAND RF ATTENUATOR APPLICATIONS. AGC FOR AM/FM TUNER. CATHODE MARK L K A ・Low Capacitance : CT=0.25[pF] Typ. 1 E FEATURES G B H F ・Low Series resistance : rS=7[Ω] (Typ.).

diode schottky 40v 30ma

Abstract: KDR377
Contextual Info: SEMICONDUCTOR KDR377 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. L K A H F ・Small Package : USC. 1 E ・Low Forward Voltage : VF 2 =0.43V (Typ.) G B CATHODE MARK FEATURES 2 J D C MAXIMUM RATING (Ta=25℃) CHARACTERISTIC I