MARKING L SOT563 Search Results
MARKING L SOT563 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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5962-8950303GC |
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ICM7555M - Dual Marked (ICM7555MTV/883) |
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MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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54ACT244/B2A |
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54ACT244/B2A - Dual marked (5962-8776001B2A) |
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ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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MQ80186-8/BYC |
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80186 - Microprocessor, 16-Bit - Dual marked (8501001YC) |
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MARKING L SOT563 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Package Details - SOT-563 Mechanical Drawing Lead Code: Reference individual device datasheet. Part Marking: 3-4 Character Alpha/Numeric Code. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R3 (5-November 2007) |
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OT-563 EIA-481-1-A 25-April | |
marking code 333Contextual Info: Package Details - SOT-563 Mechanical Drawing Lead Code: Reference individual device datasheet. Part Marking: 3-4 Character Alpha/Numeric Code. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R3 (5-November 2007) |
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OT-563 EIA-481-1-A 26-October marking code 333 | |
marking code 333
Abstract: MARKING 213 MARKING 333 Marking 34
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OT-563 EIA-481-1-A marking code 333 MARKING 213 MARKING 333 Marking 34 | |
Contextual Info: SBR130SV NEW PRODUCT 1.0A SBR SUPER BARRIER RECTIFIER Features Mechanical Data • Low Leakage Current Excellent High Temperature Stability Patented Super Barrier Rectifier Technology Case: SOT563 Case Material: Molded Plastic, “Green” Molding Compound. |
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SBR130SV OT563 J-STD-020 MIL-STD-202, SBR1U30SV DS35407 | |
Contextual Info: SBR1U30SV 1.0A SBR SUPER BARRIER RECTIFIER Features Mechanical Data • Low Leakage Current Excellent High Temperature Stability Patented Super Barrier Rectifier Technology Case: SOT563 Case Material: Molded Plastic, “Green” Molding Compound. |
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SBR1U30SV OT563 J-STD-020 MIL-STD-202, DS35028 | |
Contextual Info: UM5304EEXF Quad Channel Low Capacitance ESD Protection Array UM5304EEAF UM5304EEBF UM5304EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 General Description UM5304EEXF are surge rated diode arrays designed to protect high speed data interfaces. This series has been |
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UM5304EEXF UM5304EEAF UM5304EEBF UM5304EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 UM5304EEXF | |
Contextual Info: UM5304EEXF Quad Channel Low Capacitance ESD Protection Array UM5304EEAF UM5304EEBF UM5304EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 General Description UM5304EEXF are surge rated diode arrays designed to protect high speed data interfaces. This series has been |
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UM5304EEXF UM5304EEAF UM5304EEBF UM5304EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 UM5304EEXF | |
Contextual Info: UM5204EEXF Quad Channel Low Capacitance ESD Protection Array UM5204EEAF UM5204EEBF UM5204EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 General Description UM5204EEXF are surge rated diode arrays designed to protect high speed data interfaces. This series has been |
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UM5204EEXF UM5204EEAF UM5204EEBF UM5204EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 UM5204EEXF | |
Contextual Info: UESD55B Quad Line ESD Protection Diode Array UESD55B SC89-6 / SOT563 / SOT666 General Description The UESD55B of TVS diode array is designed to protect sensitive electronics from damage or latch-up due to ESD, for use in applications where board space is at a premium. It is unidirectional |
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UESD55B UESD55B SC89-6 OT563 OT666 UESD55 | |
Contextual Info: UESD56B 5 Line ESD Protection Diode Array UESD56B SC89-6 / SOT563 / SOT666 General Description The UESD56B of TVS diode array is designed to protect sensitive electronics from damage or latch-up due to ESD, for use in applications where board space is at a premium. It is unidirectional |
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UESD56B UESD56B SC89-6 OT563 OT666 | |
SC89-6/SOT563/SOT666Contextual Info: UESD6V8L5B Low Capacitance 5 Line ESD Protection Diode Array UESD6V8L5B SC89-6 / SOT563 / SOT666 General Description The UESD6V8L5B of TVS array is designed to protect sensitive electronics from damage or latch-up due to ESD, for use in applications where board space is at a premium, It is unidirectional device and |
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SC89-6 OT563 OT666 SC89-6/SOT563/SOT666 | |
NST30010MXV6T1G
Abstract: pnp matched pair
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NST30010MXV6T1G OT563 NST30010MXV6/D NST30010MXV6T1G pnp matched pair | |
Contextual Info: NST30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair These transistors are housed in an ultra−small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need |
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NST30010MXV6T1G OT563 NST30010MXV6/D | |
Contextual Info: NST30010MXV6T1G, NSVT30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair http://onsemi.com These transistors are housed in an ultra−small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need |
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NST30010MXV6T1G, NSVT30010MXV6T1G OT563 NST30010MXV6/D | |
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d3 marking
Abstract: R3 marking code Common Anode dual Schottky Rectifier d3marking
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OT-563 OT-563 20-January d3 marking R3 marking code Common Anode dual Schottky Rectifier d3marking | |
d3marking
Abstract: d3 marking
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OT-563 d3marking d3 marking | |
Contextual Info: SPICE MODEL: 2N7002V/VA 2N7002V/VA NEW PRODUCT DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · Dual N-Channel MOSFET Low On-Resistance SOT-563 Low Gate Threshold Voltage A Low Input Capacitance Fast Switching Speed |
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2N7002V/VA OT-563 J-STD-020C 2N7002V 2N7002VA DS30448 | |
Contextual Info: SPICE MODEL: 2N7002V/VA 2N7002V/VA Pb DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Lead-free Features • · · · · · · · · Dual N-Channel MOSFET Low On-Resistance SOT-563 Low Gate Threshold Voltage A Low Input Capacitance Fast Switching Speed |
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2N7002V/VA AEC-Q101 OT-563 DS30448 | |
Contextual Info: CMLSH2-4LA CMLSH2-4LC CMLSH2-4LS SURFACE MOUNT SILICON DUAL PAIR, LOW VF SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLSH2-4LA series consists of dual pairs of common anode, common cathode, and in-series low VF Schottky diodes |
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OT-563 14-February | |
common anode schottky power
Abstract: d3 marking marking code 18 surface mount diode CMLSH2-4LA
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OT-563 18-October common anode schottky power d3 marking marking code 18 surface mount diode CMLSH2-4LA | |
Contextual Info: CMLSH2-4LA CMLSH2-4LC CMLSH2-4LS SURFACE MOUNT DUAL PAIR, LOW VF SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLSH2-4LA series consists of dual pairs of common anode, common cathode, and in-series low VF Schottky diodes, |
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OT-563 Dissipation63 18-October | |
S2 MARKING TRANSISTOR
Abstract: marking code va transistors 2N7002V 2N7002V-7 2N7002VA sot-563 MOSFET D1 DIODES Inc date code marking marking code va sot
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2N7002V/VA AEC-Q101 OT-563 J-STD-020C MIL-STD-202, DS30448 S2 MARKING TRANSISTOR marking code va transistors 2N7002V 2N7002V-7 2N7002VA sot-563 MOSFET D1 DIODES Inc date code marking marking code va sot | |
transistor marking code G1
Abstract: MARKING CODE VA
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2N7002V/VA AEC-Q101 OT-563 OT-563 J-STD-020D DS30448 transistor marking code G1 MARKING CODE VA | |
Contextual Info: 2N7002V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage |
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2N7002V/VA AEC-Q101 OT-563 J-STD-020C DS30448 |