MARKING L 1G Search Results

smd transistor marking BL

Abstract: smd transistor marking 1E smd transistor .1G CSC2712 CSC2712BL CSC2712GR CSC2712Y ts 4141 TRANSISTOR smd transistor 1f sot-23 marking 1F SOT-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE

ts 4141 TRANSISTOR smd

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CSC2712 SOT-23 Formed SMD Package SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE

Contextual Info: CMBTA05 CMBTA06 SIOCON EPITAXIAL TRANSISTORS N -P-N transistor Marking CMBTA05 = 1H CMBTA06 = 1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0_ 2.8 0.14 0.48 1538 L 0.70 0.50 3 Pin configuration 1.4 2.6 2.4 1.2 RO.l 1 = BASE 2 = EMITTER 3 = COLLECTOR ComT

resistor SMD 1005

Abstract: RAC104D
Contextual Info: FIXED CHIP RESISTOR NETWORKS; RECTANGULAR TYPE KAMAYA OHM RAC •Features •Dimensions and Circuits W a H W a H L P RAC164D Q2 W R1 R2 Rn RAC162D H R1=R2=.=Rn P L P L ¥ Please contact KAMAYA for different resistance values. Note. Please contact KAMAYA for the detail of marking on the over coating.

BC847B

Contextual Info: BC847B BC847C SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Type Marking BC847B 1F BC847C 1G s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O • ■ ■ ■

Contextual Info: SPECIFICATION OF TDFM3B TOKO P/N: DIELECTRIC FILTER PRELIMINARY TDFM3B-1960L-13A 1. OUTLINE DIMENSION L: 6.0 Marking : B1960 13 OUT IN GND Tolerance : ±0.3 Unit : mm 2. ELECTRICAL CHARACTERISTICS SPECIFICATION : 1960.0 MHz : Fo±30.0 MHz CENTER FREQUENCY (Fo)

MARKING 1F

Abstract: CSC2712 CSC2712BL CSC2712GR CSC2712Y MARKING 1G TRANSISTOR
Contextual Info: SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking C SC 2712Y=1E C S C 2712G R G =1F CSC 2712BL(L)=1G _3.0_ 2.8 0.14 0.09 0.48 0.38 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2.6 2.4 _l.02_

Contextual Info: SPECIFICATION OF DIELECTRIC TOKO P/N: FILTER TDFM2A-1575A-11 1. OUTLINE DIMENSION L : 5.2 B : 2.0 Ÿ ¡ ¢ GND IN OUT GND tolerance : ±0.3 unit : mm Marking : 1575 11 2. ELECTRICAL CHARACTERISTICS SPECIFICATION CENTER FREQUENCY Fo PASSBAND WIDTH : :

15-75-10 toko

Abstract: TDF3A-1575B-10 1575B-10
Contextual Info: SPECIFICATION OF DIELECTRIC TOKO P/No: FILTER TDF3A-1575B-10 1. OUTLINE DIMENSION L: 5.4 B: 2.5 Marking: 1575-10 TOKO Terminal Configuration GND OUT IN GND Ÿ ¡ ¢ unit : mm tolerance : ±0.3 2. ELECTRICAL CHARACTERISTICS CENTER FREQUENCY Fo PASSBAND WIDTH

jedec package MO-269

Abstract: MT41J128M SSTE32882 micron ddr3 2133 MT18JDF25672PDZ-1G4
Contextual Info: 2GB, 4GB x72, ECC, DR 240-Pin DDR3 SDRAM VLP RDIMM Features DDR3 SDRAM VLP RDIMM MT18JDF25672PDZ – 2GB MT18JDF51272PDZ – 4GB Features Figure 1: 240-Pin VLP RDIMM (MO-269 R/C L) Module height: 18.75mm (0.738in) Options Marking • Operating temperature

A06 smd transistor

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transistor Marking CMBTA05 = 1H

toko Marking

Abstract: toko filter
Contextual Info: SPECIFICATION OF DIELECTRIC TOKO P/No: FILTER TDF3A-1907E-19 1. OUTLINE DIMENSION Marking:1907-19 TOKO L : 5.9 B : 2.5 tolerance : ±0.3 unit : mm Ÿ ¡ OUT GND ¢ IN GND 2. ELECTRICAL CHARACTERISTICS CENTER FREQUENCY Fo PASSBAND WIDTH SPECIFICATION :

tanaka

Contextual Info: SPECIFICATION OF DIELECTRIC TOKO P/No: FILTER TDFM2A-1920D-10 1. OUTLINE DIMENSION L : 4.3 B : 2.5 ? GND @ IN A OUT B GND Marking:1920 10 tolerance : ±0.3 unit : mm 2. ELECTRICAL CHARACTERISTICS CENTER FREQUENCY Fo PASSBAND WIDTH INSERTION LOSS IN PASSBAND

TDFM2A-1575A-10

Abstract: 1575A
Contextual Info: SPECIFICATION OF DIELECTRIC TOKO P/No: FILTER TDFM2A-1575A-10 1. OUTLINE DIMENSION L : 5.25 B : 2.5 Ÿ ¡ ¢ GND IN OUT GND tolerance : ±0.3 unit : mm Marking : 1575 10 2. ELECTRICAL CHARACTERISTICS CENTER FREQUENCY Fo PASSBAND WIDTH INSERTION LOSS IN PASSBAND

Contextual Info: T E C H N IC A L DATA S H E E T R404442120 TITLE: 1 W lGHZ BNC/m COAXIAL TERMINATION LTR .E DRAWING 31 max. Did 4 Bead chain length=70 mm Without marking General tolerances: + /- 0.5 mm ELECTRICAL CHARACTERISTICS DC 1GHz 75 Ohms 75 Ohms ± 1 % 1 W at 25°C

max 1907

Abstract: 2142MH max 1907 datasheet
Contextual Info: SPECIFICATION OF DIELECTRIC TOKO P/N: FILTER TDF3A-1907E-18 1. OUTLINE DIMENSION Marking:1907-18 TOKO L : 6.1 B : 3.0 tolerance : ±0.3 unit : mm Ÿ ¡ £ OUT GND GND ¢ ¤ IN GND GND 2. ELECTRICAL CHARACTERISTICS CENTER FREQUENCY Fo PASSBAND WIDTH SPECIFICATION

bt 1840

Contextual Info: SPECIFICATION OF DIELECTRIC TOKO P/No: FILTER PRELIMINARY TDFM3C-2426J-10 1. OUTLINE DIMENSION L: 5.2 B: 3.0 Ÿ w}| £ ovl ovl ¤ ovl ¡ ovl ¥ ovl ¢ qv Marking : C2426-10 F Tolerance : 0.3 Unit : mm 2. ELECTRICAL CHARACTERISTICS SPECIFICATION(-20 : 2426.5 MHz

CCL H870

Abstract: 2451
Contextual Info: SPECIFICATION OF DIELECTRIC TOKO P/No: FILTER PRELIMINARY TDFM3C-2332J-10 1. OUTLINE DIMENSION L: 5.45 B: 3.0 Ÿ w}| £ ovl ovl ¤ ovl ¡ ovl ¥ ovl ¢ qv Marking : C2332-10 F Tolerance : 0.3 Unit : mm 2. ELECTRICAL CHARACTERISTICS SPECIFICATION(-20 : 2332.5 MHz

CCL H870

Abstract: toko 4.5
Contextual Info: SPECIFICATION OF TDFM3C TOKO P/N: DIELECTRIC FILTER PRELIMINARY TDFM3C-1960L-10 1. OUTLINE DIMENSION L: 6.4 1 B: 4.5 Ÿ w}| £ ovl ovl ¤ ovl ¡ ovl ¥ ovl ¢ qv Marking : C1960-10 TOKO F Tolerance : 0.3 Unit : mm 2. ELECTRICAL CHARACTERISTICS SPECIFICATION(-20

C1880

Abstract: Dielectric Filter
Contextual Info: SPECIFICATION OF TDFM3C DIELECTRIC FILTER PRELIMINARY TOKO P/N: TDFM3C-1880L-11 1. OUTLINE DIMENSION L: 6.8 B: 4.0 Marking : C1880-11 TOKO F Tolerance : 0.3 Unit : mm Ÿ w}| £ ovl ovl ¤ ovl ¡ ovl ¥ ovl ¢ qv 2. ELECTRICAL CHARACTERISTICS CENTER FREQUENCY (Fo)

kamaya resistors

Abstract: r005f RLP63 R005-F
Contextual Info: NEW METAL-PLATE CHIP RESISTORS; LOW OHM KAMAYA OHM •Features 1. New Lineup, 1m⏲, 5m⏲, 10m⏲, 15m⏲. 2. Suitable for current sensing of Battery pack. 3. Stability Class: 5% •Dimensions W L c c d d Rated Resistnace marking is 4digit on over coating.

BCX70RG

Abstract: BCX70RK BCX70RJ
Contextual Info: 4684955 I T T SEMICONDUCTORS ~ fl7 87 D 0 2 3 2 1 D l f | 4 b f l 4 ,i S S G D Q E3S1 S I D NPN TRANSISTORS NPN Silicon Transistors Plastic Package TO-236 Marking Code VcEO h FE at VcEsat at Ices I c/ I b V ce/ I c C0b fT til •5:> Type at at Vce/Ic Vcb

RLP63

Abstract: R005-F
Contextual Info: NEW METAL-PLATE CHIP RESISTORS; LOW OHM KAMAYA OHM RLP 1. New Lineup, 1m⏲, 5m⏲, 10m⏲, 15m⏲. 2. Suitable for current sensing of Battery pack. 3. Stability Class: 5% ¥Dimensions W L c c d d Rated Resistnace marking is 4digit on over coating. H Chip Resistors

MLL34

Abstract: m6 sot-23 pinout sot-23 Marking KN bk sot 23 marking 16 SOT-143 MOTOROLA Cross Reference sot23 MMBT8599 motorola transistor dpak marking BC817-25L BC817-40L
Contextual Info: HOTOROLA SC XSTRS/R F HbZ D • b3b?2S4 DDTbSGl 3 ■ M O T b T ^ X l-O S Bipolar Transistors General-Purpose Transistors Pinout: 1-Base, 2-Em itter, 3-Collector Devices are listed in order of descending breakdown voltage. Marking V(BR)CEO Min ■»FE Max