MARKING KR Search Results
MARKING KR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
5962-8950303GC |
![]() |
ICM7555M - Dual Marked (ICM7555MTV/883) |
![]() |
||
MG80C186-10/BZA |
![]() |
80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
![]() |
||
54ACT244/B2A |
![]() |
54ACT244/B2A - Dual marked (5962-8776001B2A) |
![]() |
||
ICM7555MTV/883 |
![]() |
ICM7555MTV/883 - Dual marked (5962-8950303GA) |
![]() |
||
MQ80186-8/BYC |
![]() |
80186 - Microprocessor, 16-Bit - Dual marked (8501001YC) |
![]() |
MARKING KR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
KRC401EContextual Info: SEMICONDUCTOR KRC401E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking NA No. Item Marking 1 Device Mark NA KRC401E 2 hFE Grade - - 00.09.01 Revision No : 00 Description 1/1 |
Original |
KRC401E KRC401E | |
marking NO
Abstract: KRC413E
|
Original |
KRC413E marking NO KRC413E | |
KRC404V
Abstract: MARK ND ND marking
|
Original |
KRC404V KRC404V MARK ND ND marking | |
MARKING P8
Abstract: KRA321E
|
Original |
KRA321E MARKING P8 KRA321E | |
KRA308EContextual Info: SEMICONDUCTOR KRA308E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking PI No. Item Marking 1 Device Mark PI KRA308E 2 hFE Grade - - 00.12.27 Revision No : 00 Description 1/1 |
Original |
KRA308E KRA308E | |
KRA322EContextual Info: SEMICONDUCTOR KRA322E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking P9 No. 2000. 12. 27 Item Marking Description Device Mark P9 KRA322E hFE Grade - - Revision No : 0 1/1 |
Original |
KRA322E KRA322E | |
marking n8
Abstract: KRC421E
|
Original |
KRC421E marking n8 KRC421E | |
marking p2
Abstract: KRA316E P2 marking
|
Original |
KRA316E marking p2 KRA316E P2 marking | |
marking PK
Abstract: KRA310E
|
Original |
KRA310E marking PK KRA310E | |
marking NF
Abstract: KRC406E
|
Original |
KRC406E marking NF KRC406E | |
KRC408E
Abstract: Ni marking
|
Original |
KRC408E KRC408E Ni marking | |
KRA320E
Abstract: p7 marking marking p7
|
Original |
KRA320E KRA320E p7 marking marking p7 | |
KRA305E
Abstract: marking pe
|
Original |
KRA305E KRA305E marking pe | |
marking NC
Abstract: KRC403E
|
Original |
KRC403E marking NC KRC403E | |
|
|||
KRC422E
Abstract: MARKING N9
|
Original |
KRC422E KRC422E MARKING N9 | |
KRC414EContextual Info: SEMICONDUCTOR KRC414E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking NP No. 2006. 8. 25 Item Marking Description Device Mark NP KRC414E hFE Grade - - Revision No : 0 1/1 |
Original |
KRC414E KRC414E | |
MARK ND
Abstract: KRC404E marking nd
|
Original |
KRC404E MARK ND KRC404E marking nd | |
KRC234SContextual Info: SEMICONDUCTOR KRC234S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking NNA No. 1 Item Marking Device Mark NNA KRC234S - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method |
Original |
KRC234S OT-23 R1998. KRC234S | |
marking p4
Abstract: KRA317E
|
Original |
KRA317E marking p4 KRA317E | |
KRA318E
Abstract: MARK P5 marking P5
|
Original |
KRA318E KRA318E MARK P5 marking P5 | |
KRC409E
Abstract: marking NJ
|
Original |
KRC409E KRC409E marking NJ | |
marking n6
Abstract: KRC419E MARK N6
|
Original |
KRC419E marking n6 KRC419E MARK N6 | |
KRA306E
Abstract: marking pf
|
Original |
KRA306E KRA306E marking pf | |
marking NM
Abstract: KRC411E
|
Original |
KRC411E marking NM KRC411E |