MARKING JE SO 6 Search Results

marking JE SO 6

Contextual Info: SPECIFICATION TYPE : Approved by B E C D IS T R IB U T IO N LTD Customer Rev. Custom er’s Dwg. Number 429086 Custom er’s Part Number Toko Sample Num ber MC152 Signature # E 5 5 8 C N A -A 1 0 0 8 6 = P 3 Date One copy w ith y o u r sig n atu re is req u ired as your co n firm a tio n to our specifications.

2005A

Abstract: 2SC4002
Contextual Info: Ordering num ber: EN 2 9 6 0 r. 2SC4002 No.2960 S AïYOi NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications F e a tu re s . High breakdown voltage • Adoption of MBIT process • Excellent hpE linearity A b so lu te M axim um R atin g s at Ta = 25°C

tsm3455

Contextual Info: s TAIW AN TSM3455 SEMICONDUCTOR 30V P-Channel MOSFET b RoHS CO M PLIANCE SO T-26 654 PRODUCT SUM M ARY Pin Definition; 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V DS V) R Ds(on)(mQ) b (A) 100 @ Vcs = -10V -3.5 1 70 @ VGS = -4.5V -2.7 -30 1 23

Contextual Info: REV. S ta tu s REVISION 04/11/00 TS Line Filter OL A. Electrical Specifications @ 25 °C 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. Ld CD Rated Voltage: AC250V Rated Current: 3A Rated Frequency: 50/60Hz Operating Temmperature: —25’C ~ +55'C Storage Temperature: —25*C ~ +85*C

hi pot

Abstract: tamradio CY1 CODE
Contextual Info: REV . S ta tu s REVISION 04/11/00 TS Line Filter OL Ld A. Electrical Specifications @ 25 ° C 1. 2. 3. 4. 5. 6. 7. 7. 8. 9. 10. m Rated Voltage: AC250V Rated Current: 2A Rated Frequency: 50/60Hz Operating Temmperature: —25’C ~ +55'C Storage Temperature: —25*C ~ +85*C

TSCN1

Contextual Info: REV. S ta tu s REVISION 04/11/00 TS Line Filter OL A. Electrical Specifications @ 25 °C 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. Ld CD Rated Voltage: AC250V Rated Current: 2A Rated Frequency: 50/60Hz Operating Temmperature: —25’C ~ +55'C Storage Temperature: —25*C ~ +85*C

Contextual Info: REV. S ta tu s REVISION 04/11/00 TS Line Filter OL 0 A. Electrical Specifications @ 2 5 °C 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. Ld CD Rated Voltage: AC250V Rated Current: 5A Rated Frequency: 50/60Hz Operating Temmperature: —25’C ~ +55'C Storage Temperature: —25*C ~ +85*C

2005A

Abstract: VEBO-15V 2SC4389 PA 2027A TRANSISTOR IFW IC3100
Contextual Info: SANYO SEMICONDUCTOR [-W-'-s " -«?*'/? 6,/îj1 L:'~~~ CORP | 32E 7 cH 7 0 7 fcj O O C H l l l • 2006A —« -• • - D 2 E3 T -2 ? -2 3 N P N Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amp Applications 2957 Features

marking 2U diode

Abstract: TSM3455CX6 marking 2U 20 diode IR P-Channel mosfet TSM345 diode marking code 2U M3455 P-channel power mosfet 30V tsm3455
Contextual Info: E TAIW AN pb RoHS TSM3455 S E M IC O N D U C T O R 30V P-Channei MOSFET CO M PLIANCE PRODUCT SUM M ARY Pin Definition; 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V DS (V) R Ds(on)(mQ) b (A) 100 @ Vcs = -10V -3.5 1 70 @ VGS = -4.5V -2.7 -30 1 23

Contextual Info: TAIW AN s TSM4410 SEMICONDUCTOR 25V N-Channei MOSFET b RoHS CO M PLIANCE SO P-8 PRODUCT SUM M ARY Pin Definition: 1. S ou rce 2. S ou rce 3. S ou rce R o s tru m ) I d A) 1 5 V cs= 10V 10 21 @ V{;r> = 4.5V 8 V DS (V) 25 4. Gate 5. 6, 7, 8. Drain Features

Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE S G 4 0 T C 1 OM 100V 40A Feature • • • • • • T j= i5 r c • 7 J IÆ -J U K • I r=60^A • j r iiìè s b c u c < u •«»W Œ 2kVSSI Tj=150°C Full Molded Low lR=60pA Resistance for thermal run-away

D4802

Abstract: M3446 607ts VE-25V
Contextual Info: TAIWAN S SEMICONDUCTOR pb RoHS TSM3446 20V N-Channei MOSFET CO M PLIANCE PRODUCT SUMMARY SO T-26 854 Pin D efinition: V 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source ds R D S (on)(m Q ) Id (A) 33 @ Vos = 4 .5 V 5.3 40 @ V<yj= 2 .5V 4.4 (V ) 20 1 23

2005A

Abstract: 2SC3000 J160 transistor marking JB
Contextual Info: Ordering number ; EN 86 6 C 2SC 3000 NPN Epitaxial P lanar Silicon Transistor HF Amp Applications Features . FBET series . High fT and small ere. Absolute H a x l m Ratings at Ta=2 5C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

Contextual Info: TAIW AN s TSM3424 SEMICONDUCTOR 30V N-Channei MOSFET bl RoHS CO M PLIANCE SO T-26 654 PRODUCTS ÜMMARY P in D e fin itio n : VDS{V 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source RDS on){lTlÛ) Id (A) 30 @ VGS= 10V 6.7 42 @ V gs = 4.5V 5.7 30 1 23 Features

em 223

Contextual Info: TAIWAN SEMICONDUCTOR s TSM3441 20V P-Channel MOSFET b RoHS CO M PLIANCE PRODUCT SUM M ARY SO T-26 654 P in D e fin itio n : 1. Drain 2. Drain 3. G ate V o s V ) 6. Drain 5, Drain 4 . Source R o W rn Q ) b (A ) 90 @ Vos = -4.5V -3.3 1 1 0 @ V gs = -2.5V -2.9

Contextual Info: s TAIWAN SEMICONDUCTOR TSM2N7002E 60V N-Channe! MOSFET b RoHS y CO M PLIANCE SOT-23 •à 1 2 SOT-323 «t PRODUCT SUM M ARY P in D e fin itio n : 1. Gate 2. Source 3. Drain V ds V) R oS (on)(Q ) lD (mA) 3 @ V CS= 1Û V 300 4 @ V<;s z 4.5V 200 60 Features

TSM3433

Abstract: MARKING ato
Contextual Info: E TAIWAN TSM3433 S E M IC O N D U C T O R 20V P-Channei MOSFET pb RoHS CO M PLIANCE PRODUCT SUM M ARY SO T-26 V DS (V) Pin D e fin itio n : 854 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 1 23 Features RDS(on)<mÛ) Id (A) 42 @ V GS = -4.5V

D360SC6M

Abstract: L017
Contextual Info: Schottky Barrier Diode Diode Module •¿m u OUTLINE Package I Module D360SC6M Unit : mm W eight 66R T yp> Isi Ö 51 3-M4 nui thickness = 3.2 60V 360A p, Feature •« V • High lo Rating-Module-PKG • Low V f • Small 9 je f • 8 jcÖ ^/JV c^L' 0 1 °

Contextual Info: Ordering number: EN 2 4 6 8 2 S B 1 2 9 6 /2 S D 1 9 3 6 PNP/ NPN Epitaxial Planar Silicon Transistors SAiYO i AF Amp Applications Applications . AF power amp, medium-speed switching, small-sized motor drivers Features . Large current capacity . Low collector to emitter saturation voltage

D180SC4M

Abstract: marking aa diode
Contextual Info: Schottky Barrier Diode Diode Module M Hïïm OUTLINE Package I Module D180SC4M Unit : mm W eight 62R T yp > 3-M4 nui thickness = 3.2 40 V 180A 2 Q Feature öi° • High lo Rating-Module-PKG •« V f • Low V f • 8 jc ô V J 'Î l' • Small 9 je £>

TS4558CS

Abstract: TS4558 Satio Schematic sop6 marking 80
Contextual Info: TA IW A N TS4558 E SEMICONDUCTOR pb RoHS Dual General Purpose Operational Amplifier CO M PLIANCE S O P -S "8 P in D e fin itio n : 1. O u tp u t A 8. V cc 2. Inp ut A ( - ) 7. O u tp u t B 3. Inp ut A (-t-) 6. Input B {-} 4. G round 1 5. Input B {+) General Description

tsc 3001

Abstract: RF power mosfet marking K5 SOT-26 ci TSM3457 K5 marking code diode single P-Channel mosfet sot-26 marking AAW
Contextual Info: $ TAIW AN TSM3457 S E M IC O N D U C T O R 30V P-Channei MOSFET pb RoHS CO M PLIANCE S O T-26 854 PRODUCT SUMMARY Pin D efinition: 1. Drain 6. Drain 2. D rain 5. Drain 3. Gate 4. Source Vos (V) R DS( c n ) ( m ü ) b (A) 60 @ v {;s= 10V -5 100 @ V GS= 4.5V

RS459

Contextual Info: PRELIMINARY DATA SHEET 3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER UPC2745TB UPC2746TB TYPICAL PERFORMANCE CURVES FEATURES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package GAIN vs. FREQUENCY • LOW SUPPLY VOLTAGE: Vcc = 1.8 to 3.3 V

Contextual Info: IRF7807VPbF-1 HEXFET Power MOSFET VDS 30 RDS on max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) V 25 mΩ 9.5 nC 8.3 A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 T o p V ie w Features Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques