MARKING JE 6 PIN Search Results

FPM DRAM 30-pin SIMM

Abstract: MT8048
Contextual Info: M IC R O N 4 iVIEG DRAM MODULE X MT8D48 3 DRAM MODULE 4 MEG X 8 4 MEGABYTE, 5V, FAST PAGE MODE FEATURES OPTIONS MARKING • Tim ing 60ns access 70ns access -6 -7 P ackages 3 0 -pin SIM M DRAM SIMM • JE D E C - and in d u stry -stan d ard pin ou t in a 30-pin

marking date code Sanyo semiconductor

Abstract: marking date code Sanyo SANYO marking date code date code Sanyo semiconductor Sanyo date code marking jedec package
Contextual Info: OUTLINE DRAWING Measure 5 0 / 1 NTS M a s s (g) 0. 0 0 0 6 IFor reference 0 . 6 *0.05 Pin 1 Marking 0 . 3 5 *0.05 0 . 15 *0.035 0 . 15 *0.035 0 . 5 *0.035 SANYO P a c k a g e Code JEDEC P a c k a g e Code JE I TA P a c k a g e Code T S L P -3 -1 Drawn D r a w i n g No.

jedec Package

Abstract: TSLP-2-7
Contextual Info: Measure OUTLI NE DRAWING 50/1 NTS M a s s (g) 0. 000G IFor reference 0 . 6 *0.05 11111 Pin I Marking SANYO P a c k a g e Code JEDEC P a c k a g e Code JE I TA P a c k a g e Code T S L P -2-7 D r a w i n g No. E n a c t No. TC-0 0 00 1 823 Drawn Checked SANYO S e m i c o n d u c t o r C o . , L t d .

KRA725E

Contextual Info: SEMICONDUCTOR KRA725E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking JE 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark JE KRA725E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

marking JE

Abstract: KRA725U marking JE 6 pin
Contextual Info: SEMICONDUCTOR KRA725U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking JE 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark JE KRA725U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

BCW69

Abstract: BCW70 BCW71 BCW72 sot23 marking JR
Contextual Info: Philips Sem iconductors Product specification PNP general purpose transistors BCW69; BCW70 FE A T U R E S PINNING • Low current max. 100 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.

Contextual Info: IRF7342PbF-1 HEXFET Power MOSFET VDS -55 RDS on max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) V S1 1 8 D1 G1 2 7 D1 3 6 D2 4 5 D2 0.105 Ω 26 nC S2 -3.4 A G2 SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques

78Lxx voltage regulator

Abstract: PV 1153 ts78l05 TS78L00 ts78L15 PV 1153 V marking A3 Taiwan semiconductor Marking Code ES SOT-89 TS78L00ACY TS78L00CY
Contextual Info: TAIWAN E SEMICONDUCTOR TS78L00 Series 3-Terminal 100mA Positive Voltage Regulator pb RoHS CO M PLIANCE Pin D e fin itio n : 1. O utpu t 2. G round S O T -2 3 é 3. Input 1 Pin D e fin itio n : 1. Output 2. Input 3. Ground S O P -S S O T -8 9 Pin D e fin itio n ;

tsm3455

Contextual Info: s TAIW AN TSM3455 SEMICONDUCTOR 30V P-Channel MOSFET b RoHS CO M PLIANCE SO T-26 654 PRODUCT SUM M ARY Pin Definition; 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V DS V) R Ds(on)(mQ) b (A) 100 @ Vcs = -10V -3.5 1 70 @ VGS = -4.5V -2.7 -30 1 23

marking 2U diode

Abstract: TSM3455CX6 marking 2U 20 diode IR P-Channel mosfet TSM345 diode marking code 2U M3455 P-channel power mosfet 30V tsm3455
Contextual Info: E TAIW AN pb RoHS TSM3455 S E M IC O N D U C T O R 30V P-Channei MOSFET CO M PLIANCE PRODUCT SUM M ARY Pin Definition; 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V DS (V) R Ds(on)(mQ) b (A) 100 @ Vcs = -10V -3.5 1 70 @ VGS = -4.5V -2.7 -30 1 23

Contextual Info: IRF7416PbF-1 HEXFET Power MOSFET VDS -30 RDS on max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) V 0.020 Ω 61 nC -10 A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques

680 ohms resistor 5 watt

Abstract: 4300R 4306R-102-RC MIL-R-83401 resistor 56 ohm 8 watt 50Q2 resistor RC-9
Contextual Info: BOURNS I NC b3E D 1 5S L j S 7 3 GDGCH? IBOUR CHI THICK FILM MOLDED SIPs, LOW PROFILE 6, 8, 9, 10, AND 11 PIN • Low profile provides c o m p a tib ility w ith DIPs ■ C om patible w ith a utom atic insertion equipm ent ■ High tem perature lead atta chm en t to w ithstand reflow

45218

Abstract: 45215
Contextual Info: POMO“ -— N A‘ 1 5 0 0 E A ST NINTH S T R E E T ITT - £ 3 0 9 ; Gl">- FAX. 5 5 17 PO M ONA, C A L IF O R N IA L, 52 .06 MODEL NO. I. Material: Contact - Beryllium copper 165, 1/2 HM. Spring - Stainless steel, 302. Sq. Pin - Phosphor Bronze, Alloy 510.

Contextual Info: TOSHIBA TA4101F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A 4 1 01 F UHF VHF M IX APPLICATION FEATURES • Double Balance circuit PIN ASSIGNMENT TOP VIEW MARKING 8 7 6 5 n n n n 8 7 6 5 n n n n TYPE N A M E LO T No. 4101F y / • □ □

4392C

Contextual Info: TAIW AN % TSM4392 Prelim inary SEMICONDUCTOR 30V N-Channei MOSFET pb: RoHS C O M P L ÌA N C E SO P-8 B PRODUCT SUM M ARY Pin Definition; 1. Source 2. Source 3. Source 4. Gate 1 V o s (V R o s (c n )(m Q ) b (A ) 11.5 @ V c s = 10V 12.5 16.5 @ VGS = 4.5V

60023

Contextual Info: -aS U U U ^ - 8> iJJU U L L r- -^rrrr^- P 2 - -4 n rm - NOTE: ELECTRICAL SPECIFICATIONS* 1.0 PINS NDT ELECTRICALLY CONNECTED ARE DMITTED, INDUCTANCE (P 6 -J 6 ) : ( P l- J l) 2,0 65 uH TYP @.01V; lOKHz DC RESISTANCE P 6 -J 6 ,5 DHM MAX P 3 -J 3 ,5 DHM MAX

Contextual Info: 10 9 6 7 6 5 4 3 2 1 10 PART NO. VOID PIN LOCATIONS 8 7 3 5 4 -5 0 0 1 * 25, 45 8 7 3 5 4 -5 0 0 3 *24, 4 I & & 8 7 3 5 4 -5 0 1 1 * 25, 45 8 7 3 5 4 -5 0 1 3 *24, 4 I & & 46 42 46 42 CKT *l IDENT. SEAGATE PART NO. & REV. LETTER *44 1 3 2 9 0 -9 4 4 *40 1 3 2 9 0 -9 4 0 □

D4802

Abstract: M3446 607ts VE-25V
Contextual Info: TAIWAN S SEMICONDUCTOR pb RoHS TSM3446 20V N-Channei MOSFET CO M PLIANCE PRODUCT SUMMARY SO T-26 854 Pin D efinition: V 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source ds R D S (on)(m Q ) Id (A) 33 @ Vos = 4 .5 V 5.3 40 @ V<yj= 2 .5V 4.4 (V ) 20 1 23

Contextual Info: TAIWAN SEMICONDUCTOR s TSM2301 20V P-Channel MOSFET pbi RoHS CO M PLfAN C E PRODUCT SUMMARY SO T-23 Pin D efin itio n : 1. Gate 2. Source 3. Drain & 1 V ds RoW m Q b (A) 130 @ V CS= -4 .5 V -2.8 190 @ VGS = -2.5V -2.0 (V ) -20 2 Features Block Diagram ♦

Contextual Info: TAIW AN s TSM4410 SEMICONDUCTOR 25V N-Channei MOSFET b RoHS CO M PLIANCE SO P-8 PRODUCT SUM M ARY Pin Definition: 1. S ou rce 2. S ou rce 3. S ou rce R o s tru m ) I d A) 1 5 V cs= 10V 10 21 @ V{;r> = 4.5V 8 V DS (V) 25 4. Gate 5. 6, 7, 8. Drain Features

Contextual Info: T O SH IB A TA75S558F TO SH IBA BIPO LAR LINEAR IN TEGRATED CIRCUIT SILICON M ONOLITHIC TA75S558F DUAL OPERATIONAL AMPLIFIER TA75S558F is a low -noise m onolithic precision operational am plifier. FEATURES • Internal Frequency Com pensation Type. • Pin Com patible w ith TA75S01F.

tsc 3001

Abstract: RF power mosfet marking K5 SOT-26 ci TSM3457 K5 marking code diode single P-Channel mosfet sot-26 marking AAW
Contextual Info: $ TAIW AN TSM3457 S E M IC O N D U C T O R 30V P-Channei MOSFET pb RoHS CO M PLIANCE S O T-26 854 PRODUCT SUMMARY Pin D efinition: 1. Drain 6. Drain 2. D rain 5. Drain 3. Gate 4. Source Vos (V) R DS( c n ) ( m ü ) b (A) 60 @ v {;s= 10V -5 100 @ V GS= 4.5V

TSM3433

Abstract: MARKING ato
Contextual Info: E TAIWAN TSM3433 S E M IC O N D U C T O R 20V P-Channei MOSFET pb RoHS CO M PLIANCE PRODUCT SUM M ARY SO T-26 V DS (V) Pin D e fin itio n : 854 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 1 23 Features RDS(on)<mÛ) Id (A) 42 @ V GS = -4.5V

LR81383

Contextual Info: REV. S tatu s REVISION J REVISED AND REDRAWN ON CAD/CAM 0 3 /3 1 /9 2 REVISION K TEMECULA WAS CARSON 0 1 /0 8 /9 3 TS REVISION L ADDED SAFETY APPROVAL AND ADDED TOL TO PIN LENGTH DIM 0 3 /2 9 /9 5 TS REVISION M UPDATED FORMAT 0 6 /0 8 /9 8 TS FCC68 TELECOMMUNICATION WET COUPLING TRANSFORMER 600 : 600