MARKING JB DIODE Search Results

BAR74

Contextual Info: SIEMENS Silicon Switching Diode BAR 74 • For high-speed switching Type Marking Ordering Code tape and reel B A R 74 JB s Q62702-F704 Pin Configuration Package1) SOT-23 °-^ -O 1 EKA07003 Maximum Ratings Parameter Symbol Values Unit Reverse voltage

Q62702-A615

Abstract: marking JB Q62702-A704 marking JB diode 74 MARKING CODE 74 MARKING
Contextual Info: Silicon Switching Diode • BAR 74 For high-speed switching Type 0 BAR 74 Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package JB Q62702-A615 Q62702-A704 SOT 23 Maximum ratings Parameter Symbol Ratings Unit Reverse voltage

Contextual Info: Silicon Switching Diode 3SE D • BAR 74 053b3E0 OOlbM^G Ü ■ SIP SIEMENS/ SP CLi SEMICONDS For high-speed switching Type B BAR 74 Marking JB Ordering code for versions In bulk Q62702-A615 Ordering code for versions on 8 mm-tape Q62702-A704 Package SOT 23

TI43A

Contextual Info: ERC30 i .5A : Outline Drawings FAST RECOVERY DIODE A I Features • y * > 2 'X f c :- K a i # # c a t ' W ^ S uper high speed sw itchin g. tjz : Marking • te V F Ä 5-P-K: £ Color code : Orange Low Vp IS S JB S Abridged type name High reliability o •

marking JB diode

Abstract: JB marking transistor JB SOT323 BAV99W BAV99W-T1 marking JB
Contextual Info: BAV99W WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT FAST SWITCHING DIODE Features High Conductance L Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose and Switching Plastic Material – UL Recognition Flammability

Diode SOT-23 marking JB

Abstract: marking JB diode BAV99-T1-LF JB marking transistor MARKING JB SOT-23 BAV99 SOT 23 DATA SHEET Diode bav99 BAV99 BAV99-T1 MARKING JB
Contextual Info: BAV99 WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT FAST SWITCHING DIODE Features High Conductance L Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose and Switching Plastic Material – UL Recognition Flammability

Contextual Info: Schottky Barrier Diode Twin Diode mtmm SG 30TC 12M Unit : mm Package : FTO-220G o -y H d ^ J 120V 30A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • o u t lin e Ir=40|jA Tj=175°C Full Molded Low Ir=40|jA Resistance for thermal run-away

marking JB SCHOTTKY BARRIER DIODE

Abstract: marking JB diode SG40TC12M diode marking jb
Contextual Info: Schottky Barrier Diode Twin Diode mtmm SG40TC12M o u tlin e Package : FTO-220G Unit : mm o -y H d ^ J 120V 40A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • < S Ir = 6 0 |j A Tj=175°C Full Molded Low Ir=60|jA Resistance for thermal run-away

marking JB SCHOTTKY BARRIER DIODE

Abstract: marking JB diode diode marking jb
Contextual Info: Schottky Barrier Diode Twin Diode mtmm S G 20T C 1 2 M o u t lin e U nit : mm Package : FTO-220G o -y H d ^ J 120V 20A 4.5 Feature • Tj=175°C • 7 Jb = E -Jb K • Tj=175°C • <SIr =30|j A • Low Ir =30| jA • Resistance for thermal run-away • Full Molded

824022

Contextual Info: Specification for release Customer : Ordercode: Description: Package: 824022 TVS Diode Array WE-TVS SOT23-3L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 Lines - bidirectional • Provide ESD Protection for each line to

C5440

Contextual Info: Specification for release Customer : Ordercode: Description: Package: 824021 TVS Diode Array WE-TVS SOT23-3L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 Lines - unidirectional • ESD Protection for 1 Line - bidirectional

Contextual Info: Specification for release Customer : Ordercode: Description: Package: 824001 TVS Diode Array WE-TVS SOT23-6L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 4 high-speed I/O channels and VDD • Provide ESD protection for each channel to

Contextual Info: FDZ7064S 30V N-Channel PowerTrench SyncFETTM BGA MOSFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. Combining Fairchild’s 30V PowerTrench SyncFET process with state of the art BGA packaging, the

marking JB SCHOTTKY BARRIER DIODE

Abstract: FDZ7064N FDZ7064S mosfet marking jb
Contextual Info: FDZ7064S 30V N-Channel PowerTrench SyncFETTM BGA MOSFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. Combining Fairchild’s 30V PowerTrench SyncFET process with state of the art BGA packaging, the

WE-TVS 824011

Abstract: WE-TVS W11XY
Contextual Info: Specification for release Customer : Ordercode: Description: Package: 824011 TVS Diode Array WE-TVS SOT23-5L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 high-speed I/O channels and VDD • Provide ESD protection for each channel to

824022

Abstract: WE-TVS W22XY sot23 marking JB tlp 8a dut79
Contextual Info: Specification for release Customer : Ordercode: Description: Package: 824022 TVS Diode Array WE-TVS SOT23-3L DATUM / DATE : 2009-02-03 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 Lines - bidirectional • Provide ESD Protection for each line to

WE-TVS 824015

Abstract: SOT23-6L Marking Code
Contextual Info: Specification for release Customer : Ordercode: Description: Package: 824015 TVS Diode Array WE-TVS SOT23-6L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 4 high-speed I/O channels and VDD • Provide ESD protection for each channel to

Contextual Info: BAS16TW/BAW56DW/BAV70DW/BAV99S SURFACE MOUNT SWITCHING DIODES VOLTAGE 100 Volts POWER 200mWatts FEATURES • Fast switching speed. • Surface mount package Ideally Suited for Automatic insertion • High Conductance • MECHANICAL DATA • Case: SOT-363, Pla stic

SF10LC40

Contextual Info: Super Fast Recovery Diode Twin Diode OUTLINE Package I FTO-220 SF10LC40 Unit :mm Weight 1.9« Typ 4.5 4 0 0 V 10 A Feature • ñS'fX • trr=50ns • 711^-10 K 2kV ( S II • • • • Low Noise tnr=50ns Full Molded Dielectric Strength 2kV Main Use •

BAX12

Abstract: BAY85S MARKING D53 marking IAY marking JB diode BAV70 BAV74 BAW56 BAT18DK Thomson-CSF diodes
Contextual Info: general purpose and switching diodes 1* diodes d'usage général et de com m utation Types •f AV VF @ lF |R @ V R V RM* (V) (mA) max (V) (mA) max (nA) (V) BAL74 50 70 1 100 100 50 BAL 99 70 70 1,3 100 2500 70 BAR 74 SD 914 BAS 16 SD BAX12 50 75 75 90(3)

W1646

Abstract: MSOP-8L diode code yw
Contextual Info: Specification for release Customer : Ordercode: Description: Package: 82401646 TVS Diode Array WE-TVS MSOP-8L DATUM / DATE : 2010-09-24 A Features B Schematic and Pin Configuration: • ESD Protection for Super Speed Differential Signaling above 5Gb/s channels like USB 3.0

Contextual Info: Specification for release Customer : Ordercode: Description: Package: 824014 TVS Diode Array WE-TVS SOT23-6L DATUM / DATE : 2010-01-27 A Features B Schematic and Pin Configuration: • ESD Protection for 4 high-speed I/O channels and VDD • Provide ESD protection for each channel to

WE-TVS

Abstract: 824021 74638 marking JB sot23 wetvs
Contextual Info: Specification for release Customer : Ordercode: Description: Package: 824021 TVS Diode Array WE-TVS SOT23-3L DATUM / DATE : 2009-02-03 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 Lines - unidirectional • ESD Protection for 1 Line - bidirectional

Contextual Info: Super Fast Recovery Diode Twin Diode m tm OUTLINE Package : MTO-3P S20LC60US U nit I mm W eight 6 .1 g T y p : 600V 20A Feature • ® M ± FRD • High Voltage Super FRD • Low Noise • trr= 25ns I • trr=25ns • Small ö jc • 0 jc jb V l'£ l'