MARKING IY SOT Search Results

KTA1298

Abstract: MARKING IY SOT sot-23 IY marking IY
Contextual Info: SEMICONDUCTOR KTA1298 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking IY No. 1 Item Marking Device Mark I KTA1298 hFE Grade Y O,Y * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

marking VB SOT-23

Abstract: SMP1302-079 P1307
Contextual Info: GaAs RF ICs and Modules PIN Diodes Attenuator PIN Diodes a / y il Iy y y H A y t * * h œ a B Common Cathode SOT-23 Series Pair SOT-23 ♦ SMP1302-003 ♦ SMP1302-004 ♦ 1 SMP1302-005 PF9 PF3 PF2 SC-70 SC-70 SC-70 ♦ SMP1302-073 ♦ SMP1302-074 PF9 PF3 ♦ 1SMP1302-075

Contextual Info: SOT-23 Plastic-Encapsulate Transistors KTA1298 SOT_23 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.8 A ICM: Collector-base voltage -35 V V(BR)CBO: Operating and storage junction temperature range

Contextual Info: KTA1298 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Low frequency power amplifier application — Power switching application MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC* TJ Parameter Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTA1298 SOT_23 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.8 A ICM: Collector-base voltage

sot-23 IY

Abstract: KTA1298 IY TRANSISTOR MARKING IY SOT
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTA1298 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES z Low frequency power amplifier application z Power switching application 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: Transistors SMD Type PNP Silicon Transistors KTA1298 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 1 0.55 ● Collector Current: IC=-800mA +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Power Dissipation: PC=200mW 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTA1298 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES z Low frequency power amplifier application z Power switching application 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

transistor smd IY

Contextual Info: Diodes IC Transistors Transistor T SMD Type Product specification KTA1298 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 1 0.55 ● Collector Current: IC=-800mA +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Power Dissipation: PC=200mW 2 +0.1 0.95-0.1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1298 TRANSISTOR PNP SOT–23 FEATURES  Low Frequency Power Amplifier Application  Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: Product specification 2SA1298 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low saturation voltage: VCE sat = -0.4V(max) 1 (IC =-500 mA, IB =-20 mA) 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain: hFE = 100 320 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1

2SA1298

Abstract: hFE CLASSIFICATION Marking
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1298 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 IC =-500 mA, IB =-20 mA 0.55 Low saturation voltage: VCE(sat) = -0.4V(max) +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain: hFE = 100 320 0.4 3 Features 2 +0.1

marking B3A sot23-5

Contextual Info: BC856S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR Package: SOT-23 ♦Com plem ent to BC846S ABSOLUTE MAXIMUM RATINGS a t Tflmb=1is r c _ C haracteristic Symbol Rating

KTA1298

Abstract: sot-23 IY
Contextual Info: KTA1298 PNP Silicon Transistors COLLECTOR 3 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCEO VCBO VEBO IC Value -30 -35 -5.0 -800 Unit Vdc

MARKING IY SOT

Contextual Info: WTA8921 PNP Silicon Transistors COLLECTOR * “G” Lead Pb -Free 3 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCEO VCBO VEBO IC Value

2SA1298Y

Abstract: SOT-23-hg 2SA1298 2SA1298-O 2SA1298-Y MARKING IY SOT
Contextual Info: 2SA1298 -0.8A , -35V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Low Frequency Power Amplifier Application  Power Switching Applications

Contextual Info: ᄰ፿ྯ૵਌ General Purpose Transistors FHT1298 General Purpose Transistors ᄰ፿ྯ૵਌ DESCRIPTION & FEATURES 概述及特點 Suitable for Driver Stage of Small Motor 小馬達驅動 Complementary to FHT3265 與 FHT3265 互補 SOT-23 PIN ASSIGNMENT 引腳說明

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SA1298-O 2SA1298-Y Features • Power switching application x Surface Mount SOT-23 Package x Low frequency power amplifier application

sm403

Abstract: sot363 marking qs 71072
Contextual Info: SM403PL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY Vps(V) Id (A) r D S (o n) ( ^ ) 0.180 @ VG S= —4.5 V -2 0 VP ± 1 .5 0.200 @ VGS = -3 .6 V ± 1 .4 0.265 @ VGS = -2 .5 V ± 1 .2 A <0* SOT-363 SC-70 (6-LEADS) Marking Code

RTO BH

Abstract: NPN BH RE IY 925 TRANSISTOR transistor marking bh ra transistors 368 & 369
Contextual Info: Die no. D-15 NPN medium power transistor Dimensions Units : mm These are epitaxial planar NPN silicon transistors. SST3 Features 2.9 available in a SST3 (SST, SOT-23) package, see page 300 ± 0.2 1 . 9 * 0.2 collector-to-emitter breakdown voltage, BVCE0 = 45 V (min) at

Contextual Info: b b 5 3 ^31 0 0 2 4 0 3 5 Philips Semiconductors ATT Product specification PMBF4416; PMBF4416A N-channel field-effect transistor N AMER PHILIPS/DISCRETE FEATURES APX b7E D QUICK REFEREN CE DATA • Low noise SYM BOL • Interchangeability of drain and source connections

MARKING P2F

Abstract: transistor P2F PZT2907AT3 motorola P2F
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon E p itaxial Transistor PZT2907AT1 M otorola P referred Devios This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is

ltkh

Abstract: marking LTIZ LGH3C100K24 LTIZ LT1615-1 LTIZ SOT A47 SOT23 R 4R7 inductor SOf-23 LMK316BJ475
Contextual Info: u im LT1615/LT1615-1 TECHNOLOGY M ic ro p o w e r Step-Up D C /D C C onverters in SOT-23 FEATURES DE9CRIFT10n • Low Q iescent Cirrent: 20|aAin Active Mode <1 oAin Shutdown Mode ■ Operates with V|N as Low as 1V ■ Low Vcesat Switch: 250mV at 300mA ■ Tiny 5-Lead SOT-23 Package

EQUIVALENT FOR J175

Abstract: J177 equivalent SST174
Contextual Info: Tem ic J/SST174 Series Siliconix P-Channel JFETs SST174 SST175 SST176 SST177 J174 J175 J176 J177 Product Summary P a rt N u m b e r v GS off (V) J/SST174 5 to 10 J/SST175 3 to 6 J/SST176 1 to 4 J/SST177 0.8 to 2.25 1d (oH) iy p (pA) toN iy p (n s) 85 -1 0