MARKING IR 2CA Search Results

6ca DIODE

Abstract: marking code 533 DIODE 6ca DIODE marking 6CA marking 6ca ON Semiconductor marking AN
Contextual Info: Central CMUD2836 CMUD2838 Semiconductor Corp. SURFACE MOUNT ULTRAmini DUAL HIGH SPEED SILICON SWITCHING DIODES DUAL, COMMON ANODE DUAL, COMMON CATHODE MAXIMUM RATINGS: MARKING CODE: 2CA MARKING CODE: 6CA TA=25°C Peak Repetitive Reverse Voltage SYMBOL

6ca DIODE

Abstract: DIODE marking 6CA DIODE 6ca marking 6ca vr 6ca marking 2ca
Contextual Info: Central CMUD2836 CMUD2838 TM Semiconductor Corp. SURFACE MOUNT ULTRAmini DUAL HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy molded

6ca DIODE

Abstract: DIODE 6ca DIODE marking 6CA marking code 18 surface mount diode marking 6ca CMUD2836 marking r4 diode CMUD2838 marking IR 2CA vr 6ca
Contextual Info: Central CMUD2836 CMUD2838 TM Semiconductor Corp. SURFACE MOUNT ULTRAmini DUAL HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy molded

Contextual Info: Central CMUD2836 CMUD2838 TM Semiconductor Corp. SURFACE MOUNT ULTRAmini DUAL HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy molded

6ca DIODE

Abstract: DIODE marking 6CA DIODE 6ca CMUD2836 CMUD2838 marking 2ca marking IR 2CA DIODE marking 2CA vr 6ca
Contextual Info: CMUD2836 CMUD2838 SURFACE MOUNT DUAL, HIGH SPEED SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar

Contextual Info: CMUD2836 CMUD2838 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT DUAL, HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar

itt 2222a

Abstract: itt 2907A motorola diode cross reference PTZA92 2222a pinout ZTA14 PTZA42 2907A bs33 zta96
Contextual Info: MOTOROLA SC XSTRS/R MbE D F b3b?5SH GGTbSlb S • MOTb T ^ b O l ■ V " : SOT-22 ■•••.' , '¿»1%,»* 'f-f » Maximum die size Switching Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector hFE Device <T Marking ton toff v (BR)CEO Min

6ca DIODE

Abstract: DIODE 6ca DUAL SURFACE MOUNT DIODE DIODE marking 6CA marking 6ca CMUD2836 CMUD2838 marking 2ca
Contextual Info: Central CMUD2836 CMUD2838 TM Semiconductor Corp. ULTRAmini SURFACE MOUNT DUAL HIGH SPEED SWITCHING SILICON DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy molded

DIODE marking 2CA

Abstract: DUAL SURFACE MOUNT DIODE silicon power switching diode diode marking r0
Contextual Info: Central CMUD2836 ULTRAmini SURFACE MOUNT DUAL COMMON ANODE HIGH SPEED SWITCHING SILICON DIODE TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in

CTU1S

Abstract: CTB-34 CTU-G3DR Sanken SH shv02
Contextual Info: SANKEN ELECTRIC U S A H E High Voltage Diodes D I 7 IVrm: 2—24kV ? m DDDDiaS Bio : 2mA/350mA r - 0 3 - Ì 5 T-02-0 SHV/HVR Absolute Maximum Ratings Rating/ Characteristics V rsm V rm lo If s m Tc kV (kV) (mA) (A) CC) SHV-02 Vf (V) 60HZ- Half Sine Wave

GM3Z

Contextual Info: SANKEN E L E C T R I C Ï' î U S A HE Rectifier Diodes D | 7^0741 Vrm:100~1000V b □ O D D U 'i b io :1.3~30A h : ' • - T .o V ,c r GM/SG R ating/ Characteristics Absolute Maximum Ratings V rsm V V rm (V) lo (A) 500 200 400 800 1000 600 800 1200 1000

CTL22S

Abstract: CTB34 ctb-34 CTU-G3DR CTU1S CTUG3DR
Contextual Info: SANKEN ELECTRIC U S A 11E D I ? ? 4 1 IVrm : 100— 200V Ultra Fast Recovery Diodes 00001*43 2 I H lo : 5 — 20 A CTL | V rm V lo (A) Tstg CC) Tj CC) Ifsm (A) With 60HzHaNSineWave 100 100 200 200 100 100 200 200 100 100 200 200 Ir (mA) Vf (V) trr Irm

EK13 equivalent

Abstract: ek030 ctb-34s Sanken Rectifier GH-3S
Contextual Info: SANKEN ELECTRI C U S A F- I M HE Schottky Barrier Diodes D I IV r m : 3 0 — 9 0 V 7 ^ 0 7 4 1 0DDÜ145 b | H lo : 0 .7 — 3 0 A T ' 0 SFPB/AK/EK/RK/FMB/CTB Type N o \ ^ Absolute Maximum Ratings < | Rating/ Characteristics Vrsm V Per c h ip lo (A) If s m

Contextual Info: P6SMB SERIES Transient Voltage Suppressors 600W 0.086 (2.20) 0.077 (1.95) 0.155 (3.94) 0.130 (3.30) 0.180 (4.57) 0.160 (4.06) 0.0 (0.305) 0.012 0.006 (0.152) 0.096 (2.44) 0.084 (2.13) 0.008 (0.203) Max. 0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21)

JDH3D01S

Contextual Info: JDH3D01S TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01S ○ For wave detection ¾ Unit: mm Small package Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Reverse voltage VR 4 V Forward current IF 25 mA Junction temperature Tj

Contextual Info: LH53BV8600N 8M Mask ROM Model No.: LH5D86xx Spec No.: EL093164 Issue Date: May 8, 1998 SHARP LH53BV8600N •Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited

marking q815

Contextual Info: H Y U N D A I - « H Y 512260 128Kx16. CMOS DRAM wlth/2CAS DESCRIPTION This family is a 2M bit dynamic RAM organized 131,072 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Independent read and write of upper and

Contextual Info: •HYUNDAI HY514260B 256KX16, CMOS DRAM w ith /2CAS DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time 50, 60

Contextual Info: ES2AA - ES2JA 2.0AMPS Surface Mount Super Fast Rectifiers SMA/DO-214AC Features — Glass passivated junction chip — For surface mounted application — Low profile package — Built-in strain rellef — Ideal for automated placement — Easy pick and place —

ES2JA F3

Contextual Info: ES2AA - ES2JA 2.0AMPS Surface Mount Super Fast Rectifiers SMA/DO-214AC Features — Glass passivated junction chip — For surface mounted application — Low profile package — Built-in strain rellef — Ideal for automated placement — Easy pick and place —

Contextual Info: TAIWAN SEMICONDUCTOR [ s Pb RoHS COMPLIANCE ES2AA - ES2JA 2.0 AMPS. Surface Mount Super Fast Rectifiers S MA/DO-214AC .062 1.58 .050(1.27) .111(2.83) .090(2.29) Ï Ï I Features 4-v-v❖ -v4-y4-v•> UL R ecognized F ile # E -326243 Glass passivated junction chip

marking code GIF

Abstract: NMB MANUFACTURER DDEE177 LH53C8600N CD0-D15
Contextual Info: SHARP LH53C8S00N C L O N T E N T S General Description P. 2 2. Features P. 2 3. Block Diagrai P. 3 4. Pin Connections P. 4 5. Pin Description P. 4 6. Absolute laxiauatatings P. 5 7. Operating Kanges P. 5 î, P.C. Electrical Characteristics P.5 9. A. C. Electrical Characteristics

CTU1S

Abstract: CTB34 ad lot id CTB-34 CTU22S
Contextual Info: sanken El e c t r i c u s a HE Fast Recovery Diodes V rm V Type N a \ ^ 1350 CTU-G2DR 1350 CTU-G3DR 150 FMU-11S , R FMU-12S, R 250 450 FMU-14S, R 650 FMU-16S, R 150 FMU-21S, R 250 FMU-22S, R FMU-24S, R 450 FMU-26S, R L 650 150 FMU-31S, R 250 FMU-32S, R 450

Contextual Info: Surface Mount Multilayer Ceramic Chip Capacitors SMD MLCCs Capacitor Array, X7R Dielectric, 10 – 200 VDC (Commercial & Automotive Grade) Overview KEMET’s Ceramic Chip Capacitor Array in X7R dielectric is an advanced passive technology where multiple capacitor elements