MARKING HT SOT Search Results

marking code 68W

Contextual Info: SIEMENS BAT 68W Silicon Schottky Diodes Preliminary data • For mixer applications in the VHF/UHF range • For high speed switching BAT 68-04W BAT68-05W CI/A2 A t/M FL _0_ U BAT68-06W C1/C2 HT • n HT U ET Type Marking Ordering Code Pin Configuration BAT 68-04W

Contextual Info: MMUN2135 Bias Resistor Transistor PNP Silicon COLLECT OR R1 1 BASE 3 3 R2 1 2 EMITTER 2 SOT-23 Maximum Ratings TA=25 C unless otherwise noted Rating Collector-Emitter Voltage Symbol VCEO Value 50 VCBO 50 Unit Vdc Vdc IC 100 mAdc Collector-Base Voltage Collector Current-Continuous

MXTA42

Contextual Info: MXTA42 NPN Plastic-Encapsulate Transistor SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER Features: 2 3 *Low Collector-Emitter Saturation Voltage *High Breakdown Voltage M aximum R atings TA=25 C unless otherwise noted Rating Collector-Emitter Voltage Collector-Base Voltage

Contextual Info: ST2133 CMOS Positive Voltage Regulator Elektronische Bauelemente RoHS Compliant Product Description The ST2133 series of positive,linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications. The space-saving SOT-26 package is

Contextual Info: r z T S G S -T H O M S O N ^ 7 # M û t M M iÊ ÎK îO T C S T N 22 STARTLIG HT FEATURES • Vbr: 1200-1500V and 1000-1600V versions ■ Ih > 175mA ■ Iqt <1 -5 mA t> k SOT 194 Plastic DESCRIPTION The TN22 is an high performance asymetrical SCR in high voltage PNPN diffused planar tech­

2SA1035

Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SA1035 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Low noise voltage NV. 0.4 3 Features 1 Mini type package, allowing downsizing of the equipment and automatic 0.55 High forward current transfer ratio hFE.

Contextual Info: Product specification 2SA1035 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Low noise voltage NV. 0.4 3 Features 1 0.55 High forward current transfer ratio hFE. 2 Mini type package, allowing downsizing of the equipment and automatic +0.1

DIODE WJ SOt23

Abstract: 7.a sot-23 marking BSs sot23
Contextual Info: S IE M F N S SIPMOS Small-Signal Transistors BSS 84 BSS 110 VDS = -5 0 V lD = - 0 .1 3 /- 0 .1 7 A ^DS on = 10 Q • P channel • Enhancem ent mode • Packages: SOT-23, TO-92 (BSS 110) SOT-23 (BSS 84) D S TO -92 ') Type Marking Ordering code for version on

g23 sot23

Contextual Info: . A . G eneral ^ S e m ic o n d u c to r MMBZ4617 thru MMBZ4627 Zener Diodes % Vz Range 2.4 to 6.2V Power Dissipation 350mW f t W SOT-23 Top View a •122 3.1 . 1 1 0 ( 2 .8 ) .016(0.4) 2 Top View □ 0 " Mounting Pad Layout h—0.037 0.03 (0.95) 0.037 (0.95)

marking HX 6pin

Abstract: WM Marking code NXP Diodes MARKING 11* 3PIN marking code LP qfn PACKAGE OUTLINE Drawing nxp wt marking ht marking sot-665
Contextual Info: PEMIxQFN; PEMI2STD family Integrated 1-, 2-, 4-, 6- and 8-channel passive filter network with ESD protection Rev. 1 — 29 July 2011 Product data sheet 1. Product profile 1.1 General description The devices are a family of RC low pass filters. They are designed to provide filtering of

marking HX 6pin

Abstract: WT marking WM Marking code "MARKING CODE LE" PEMI4QFN marking code LP
Contextual Info: PEMIxQFN; PEMI2STD family Integrated 1-, 2-, 4-, 6- and 8-channel passive filter network with ESD protection Rev. 2 — 3 November 2011 Product data sheet 1. Product profile 1.1 General description The devices are a family of RC low pass filters. They are designed to provide filtering of

marking HX 6pin

Contextual Info: PEMIxQFN; PEMI2STD family Integrated 1-, 2-, 4-, 6- and 8-channel passive filter network with ESD protection Rev. 2 — 3 November 2011 Product data sheet 1. Product profile 1.1 General description The devices are a family of RC low pass filters. They are designed to provide filtering of

SOT23 R1P

Abstract: k1p sot-23 marking k1p sot-23 Marking k1p MMBT2222A MMBT2907A
Contextual Info: MMBT2222A C O R P O R A T E D NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT2907A Ideal for Medium Power Amplification and Switching • SOT-23 Dim Min Max A 0.37 0.51 B

Contextual Info: 2SC3356W High-Frequency Amplifier Transistors P b Lead Pb -Free COLLECTOR 3 3 DESCRIPTION: The 2SC3356W is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. 1 BASE 1 2 2 EMITTER SOT-323(SC-70) FEATURES: * We declare that the material of product

marking code 26

Contextual Info: DDZX9682W - DDZX9716W Features • · · · Very Sharp Breakdown Characteristics Very Tight Tolerance on VZ Ideally Suited for Automated Assembly Processes Very Low Leakage Current A SOT-323 Dim Min Max A 0.25 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal E 0.30

marking Ht SOT-363

Abstract: A2 9 zener diode DDZX9685TS
Contextual Info: DDZX9682TS - DDZX9716TS Features • Very Sharp Breakdown Characteristics Very Tight Tolerance on VZ Ideally Suited for Automated Assembly Processes Very Low Leakage Current C1 C2 A2 · · · Case: SOT-363, Plastic Plastic Material: UL Flammability Classification

Zener Diode SOT-23

Abstract: marking hw sot23
Contextual Info: DDZX9682 - DDZX9717 Features • · · · · Very Sharp Breakdown Characteristics 300mW Power Dissipation on Ceramic PCB Very Tight Tolerance on VZ Ideally Suited for Automated Assembly Processes Very Low Leakage Current SOT-23 A B C D E Mechanical Data G H

marking Ht SOT-363

Abstract: zener 12 HP
Contextual Info: DDZX9682TS - DDZX9716TS Features • Very Sharp Breakdown Characteristics Very Tight Tolerance on VZ Ideally Suited for Automated Assembly Processes Very Low Leakage Current C1 C2 A2 · · · Case: SOT-363, Plastic Plastic Material: UL Flammability Classification

Contextual Info: DDZX9682W - DDZX9716W SURFACE MOUNT PRECISION ZENER DIODE Features • · · · Very Sharp Breakdown Characteristics Very Tight Tolerance on VZ Ideally Suited for Automated Assembly Processes Very Low Leakage Current A SOT-323 Dim Min Max A 0.25 0.40 B 1.15

DDZX9698

Abstract: Zener Diode SOT-23
Contextual Info: DDZX9682 - DDZX9717 Features • · · · · Very Sharp Breakdown Characteristics 300mW Power Dissipation on Ceramic PCB Very Tight Tolerance on VZ Ideally Suited for Automated Assembly Processes Very Low Leakage Current SOT-23 A B C D E Mechanical Data G H

MYS 99

Abstract: STMicroelectronics date code format STMicroelectronics marking code date MYS 99 STMicroelectronics Date Code Marking STMicroelectronics STMicroelectronics marking code AN926 STMicroelectronics marking code date diode soic date code stmicroelectronics INTEGRATED CIRCUIT DATE code stmicroelectronics
Contextual Info: AN926 APPLICATION NOTE Brand Traceability with for NVRAM Products INTRODUCTION To ensure traceability to specific assembly and test operations, ST clearly brands a date code on every device, as well as an encapsulation code on CAPHAT products. STMicroelectronics is implementing a

MYS 99

Abstract: STMicroelectronics marking code date MYS 99 STMicroelectronics Date Code Marking STMicroelectronics STMicroelectronics date code format st marking code st MYS 99 stmicroelectronics assembly site date code format LOT code stmicroelectronics marking code stmicroelectronics
Contextual Info: AN926 Application note Brand traceability Introduction To ensure traceability to specific assembly and test operations, ST clearly brands a date code on every device, as well as an encapsulation code on CAPHAT products. STMicroelectronics is implementing a new marking and traceability scheme due to the sizes

Contextual Info: MMBTH10W VHF/UHF Transistors COLLECTOR 3 3 P b Lead Pb -Free 1 1 BASE FEATURES: 2 2 EMITTER SOT-323(SC-70) * We declare that the material of product compliance with RoHS requirements. Maximum Ratings (TA=25°C Unlesso therwise noted) Rating Symbol Value Unit

marking I2 SOT23-5

Contextual Info: Thaï mLUMHP AECWKLAERTDT Surface Mount Microwave Schottky Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series Features • Surface Mount SOT-23/ SOT-143 Package • High Detection Sensitivity: up to 50 mV/|iW at 915 MHz up to 35 mV/jiW at 2.45 GHz