MARKING H3B Search Results

A09 N03 MOSFET

Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Contextual Info: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04

Contextual Info: SIEMENS BCR 108 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kQ, R2=47k£2 Type Marking Ordering Code Pin Configuration BCR 108 WHs 1= B Q62702-C2253 Package 2=E 3=C SOT-23

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

Contextual Info: TS50P05G thru TS50P07G Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Glass passivated junction - Ideal for printed circuit board - Typical IR less than 0.1 A - High surge current capability - ESD capability PASS AEC-Q101 level H3B

BLF177

Abstract: philips ET-E 60 4312 020 36642 2222 030 capacitor philips MARKING H3B WCA244
Contextual Info: bbS3^31 GOSTfi?1! Philips Semiconductors H3B [A P X Product specification BLF177 HF/VHF power MOS transistor N AMER P H I L I P S / D I S C R E T E b'iE D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . Rectifiers - Standard Rectifiers with ESD Capability I INNOVAT AND TEC O L OGY SE20AFJ and SE30AFJ N HN Diodes O 19 62-2012 600 V SE20AFJ and SE30AFJ Standard Rectifiers with ESD Capability in Low-Profile SlimSMA Package

JESD 201 class 1A

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . Diodes SE20AFJ and SE30AFJ 600 V SE20AFJ and SE30AFJ Standard Rectifiers with ESD Capability in Low-Profile SlimSMA Package KEY BENEFITS • • • • • • • • High current density ESD capability

Contextual Info: TPD4E001-Q1 www.ti.com SLLSEG0C – MARCH 2013 – REVISED JUNE 2013 4-CHANNEL ESD PROTECTION ARRAY WITH 1.5-pF IO CAPACITANCE Check for Samples: TPD4E001-Q1 FEATURES 1 • • • • • • • • APPLICATIONS Qualified for Automotive Applications AEC-Q100 Qualified With the Following

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Surface Mount Silicon Zener Diodes Plastic SOD'123 Package Three complete series of Zener Diodes are offered in the convenient, surface mount plastic SOD-123 package. These devices provide a convenient alternative to the leadless

TLE4941plusC

Abstract: TLE4941P PG-SSO-2-53 41CPA gaussmeter probe tle4941plus TLE4941C Tesla MARKING 41CPA
Contextual Info: Advanced Diff. Speed Sensor TLE4941plusC Data Sheet Revision 1.1 Edition February 2011 Published by Infineon Technologies AG 81726 München, Germany 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or

TLE4941C

Contextual Info: Advanced Diff. Speed Sensor TLE4941plusC Data Sheet Revision 1.1 Edition February 2011 Published by Infineon Technologies AG 81726 München, Germany 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or

motorola M1MA151W

Contextual Info: MOTOROLA Order this document by M1MA151WKT1/D SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diodes M1MA151WKT1 M1MA152WKT1 These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59

Contextual Info: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TPD6F002-Q1 SLLSEK0A – DECEMBER 2014 – REVISED FEBRUARY 2015 TPD6F002-Q1 Automotive ESD Protection and EMI Filter for LCD Displays and FPD-Link 1 Features 3 Description

Contextual Info: TPD4E001-Q1 www.ti.com SLLSEG0B – MARCH 2013 – REVISED MAY 2013 4-CHANNEL ESD PROTECTION ARRAY WITH 1.5-pF IO CAPACITANCE Check for Samples: TPD4E001-Q1 FEATURES 1 • • • • • • • • APPLICATIONS Qualified for Automotive Applications AEC-Q100 Qualified With the Following

Contextual Info: TPD4E001-Q1 www.ti.com SLLSEG0A – MARCH 2013 – REVISED MARCH 2013 4-CHANNEL ESD PROTECTION ARRAY WITH 1.5-pF IO CAPACITANCE Check for Samples: TPD4E001-Q1 FEATURES 1 • • 2 • • • • • • APPLICATIONS Qualified for Automotive Applications AEC-Q100 Qualified With the Following

Contextual Info: TPD4E001-Q1 www.ti.com SLLSEG0B – MARCH 2013 – REVISED MAY 2013 4-CHANNEL ESD PROTECTION ARRAY WITH 1.5-pF IO CAPACITANCE Check for Samples: TPD4E001-Q1 FEATURES 1 • • • • • • • • APPLICATIONS Qualified for Automotive Applications AEC-Q100 Qualified With the Following

Contextual Info: TPD4E001-Q1 www.ti.com SLLSEG0A – MARCH 2013 – REVISED MARCH 2013 4-CHANNEL ESD PROTECTION ARRAY WITH 1.5-pF IO CAPACITANCE Check for Samples: TPD4E001-Q1 FEATURES 1 • • 2 • • • • • • APPLICATIONS Qualified for Automotive Applications AEC-Q100 Qualified With the Following

Gfg 51a

Abstract: GFM 16A GFG 48A GFM 85A gfx 51a
Contextual Info: MOTOROLA SC D IO D E S / O P T O b3b?SSS 55E J> DGÔ1333 2 MOTOROLA Order this data sheet by 1SMC5.0/D T - l) * 2 3 SEMICONDUCTOR TECHNICAL DATA 1SMC5.0, A Zener Overvoltage Transient Su ppressors thru 1SMC170, A . designed specifically for transient voltage suppression. The wide leads assure a large

Contextual Info: TS50P05G - TS50P07G CREAT BY ART Single Phase 50.0 AMPS. Glass Passivated Bridge Rectifiers TS-6P Features — UL Recognized File # E-326243 — Glass passivated junction — Ideal for printed circuit board — Plastic material has Underwriters Laboratory Flammability Classification 94V-0

Contextual Info: TS50P05G thru TS50P07G Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - UL Recognized File # E-326243 - Glass passivated junction - Ideal for printed circuit board - Typical IR less than 0.1uA - High surge current capability

TRANSISTOR SMD MARKING CODE 1BW

Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

XD 105 94V-0

Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

4T245Q

Contextual Info: SN74AVC4T245-Q1 www.ti.com SCES792A – NOVEMBER 2009 – REVISED OCTOBER 2012 4-BIT DUAL-SUPPLY BUS TRANSCEIVER WITH CONFIGURABLE VOLTAGE TRANSLATION AND 3-STATE OUTPUTS Check for Samples: SN74AVC4T245-Q1 • • • • RGY PACKAGE TOP VIEW VCCB • 1

B3045

Contextual Info: MOTOROLA Order this document by MBR3045ST/D SEMICONDUCTOR TECHNICAL DATA Advance Information MBR3045ST SW ITCH MODE Pow er R ectifier Motorola Preferred Device . . using the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: