MARKING H1 AMP Search Results

Contextual Info: r z 7 SGS-THOMSON ^ 7 # MeramiOTiBiiKiDe BCW69 BCW70 SMALL SIGNAL PNP TRANSISTORS Type Marking BCW69 H1 BCW70 H2 . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL AUDIO AMPLIFICATION AND

Contextual Info: HI-SINCERITY Spec. No. : HE9012 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI340 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI340 is designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.

HI3669

Abstract: ic k1
Contextual Info: HI-SINCERITY Spec. No. : HE9029 Issued Date : 1997.11.14 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI3669 is designed for using in power amplifier applications, power switching application.

Contextual Info: HI-SINCERITY Spec. No. : HE9004 Issued Date : 1998.01.25 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings TA=25°C

Contextual Info: HI-SINCERITY Spec. No. : HE9001 Issued Date : 1996.02.28 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI31C NPN EPITAXIAL PLANAR TRANSISTOR Description The HI31C is designed for use in general purpose amplifier and switching applications.

Contextual Info: HI-SINCERITY Spec. No. : HE9002 Issued Date : 1994.03.02 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI32C PNP EPITAXIAL PLANAR TRANSISTOR Description The HI32C is designed for use in general purpose amplifier and low speed switching applications.

transistor mark code H1

Abstract: HI669A
Contextual Info: HI-SINCERITY Spec. No. : HE9004 Issued Date : 1998.01.25 Revised Date : 2006.12.06 Page No. : 1/4 MICROELECTRONICS CORP. HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings TA=25°C

transistor mark code H1

Abstract: HI10387 A1 marking code amplifier
Contextual Info: HI-SINCERITY Spec. No. : HE9028 Issued Date : 1994.01.25 Revised Date : 2004.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI10387 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI10387 is designed for general-purpose amplifier and low-speed switching applications.

HI882

Abstract: HE9014 transistor mark code H1 transistor Ic 1A NPN
Contextual Info: HI-SINCERITY Spec. No. : HE9014 Issued Date : 1996.04.12 Revised Date : 2006.12.06 Page No. : 1/5 MICROELECTRONICS CORP. HI882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI882 is designed for using in output stage of 10 W audio amplifier, voltage regulator,

H*772

Abstract: he9015 HI772
Contextual Info: HI-SINCERITY Spec. No. : HE9015 Issued Date : 1996.04.12 Revised Date : 2006.12.06 Page No. : 1/5 MICROELECTRONICS CORP. HI772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HI772 is designed for using in output stage of 10 W audio amplifier, voltage regulator,

Contextual Info: SMD Schottky Barrier Rectifiers CDBMH120-G Thru. CDBMH1150-G Reverse Voltage: 20 to 150 Volts Forward Current: 1.0 Amp RoHS Device Features SOD-123T -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

B817

Abstract: "B817" CE01 SFMC28-461
Contextual Info: SFMC28-461 EMI FILTER 2.7 AMP EMI INPUT FILTER 28 VOLT INPUT FEATURES • Fully qualified to Class H or K • Passive components for maximum tolerance in space environments • –55° to +125°C operation • 28 volt input • Up to 2.7 amps throughput current

SEF101FL

Abstract: SEF101FL~SEF107FL
Contextual Info: SEF101FL~SEF107FL Voltage 50 ~ 1000 V 1.0 Amp High Efficiency Recovery Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES     Low profile package Ideal for automated placement

Contextual Info: SEF101FL~SEF107FL Voltage 50 ~ 1000 V 1.0 Amp High Efficiency Recovery Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES     SOD-123FL Low profile package Ideal for automated placement

SEF101MH

Abstract: SEF101MH~SEF107MH diode marking code H5 Marking code H6 DIODE MARKING CODE H7 marking CODE MH 105MH 101mh MH 106 marking H4
Contextual Info: SEF101MH~SEF107MH VOLTAGE 50 ~ 1000 V 1.0 Amp High Efficiency Recovery Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free FEATURES      SOD-123MH Batch process design, excellent power dissipation offers

a733 transistor

Abstract: A7333 A733 P C306A Transistor a733 BTA733A3 A733 BTC945A3
Contextual Info: Spec. No. : C306A3 Issued Date : 2003.07.14 Revised Date : 2005.01.03 Page No. : 1 / 5 CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTA733A3 Description • The BTA733A3 is designed for use in driver stage of AF amplifier and general purpose amplification.

MIL-STD-461C CE-03 levels

Abstract: Interpoint 94010H02HXC smd marking KH CE01 SFMC28-461 MIL-STD-38534 FILTER EMI DC POWER LINE SMD 94010H02KZC
Contextual Info: Crane Aerospace & Electronics Power Solutions SFMC28-461 EMI Input Filters 28 Volt input – 2.7 AMP Features • Fully qualified to Class H or K • Passive components used for maximum tolerance in space environments • -55°C to +125°C operation • Nominal 28 V input, 0 V to 50 V operation

C945 pin spec

Abstract: TRANSISTOR c945 p C945 TO92 transistor npn c945 transistor c945 c945 w 53 C945 NPN transistor c945 P c945 transistor transistor c945 datasheet
Contextual Info: CYStech Electronics Corp. Spec. No. : C204A3 Issued Date : 2003.04.01 Revised Date : 2005.01.03 Page No. : 1 / 5 General Purpose NPN Epitaxial Planar Transistor BTC945A3 Description • The BTC945A3 is designed for use in driver stage of AF amplifier and low speed switching.

transistor csa952

Abstract: CSA952 CSC2001 MARKING W1 AD
Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSA952 9AW TO-92 BCE MARKING : AS BELOW Audio Frequency Power Amplifier.

transistor csa952

Abstract: CSA952 CSC2001
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSA952 9AW TO-92 BCE MARKING : AS BELOW Audio Frequency Power Amplifier. Complementary CSC2001 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

csa952

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSA952 9AW TO-92 BCE MARKING : AS BELOW Audio Frequency Power Amplifier. Complementary CSC2001 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

Contextual Info: HFM101M thru HFM107M Surface Mount Ultra Fast Recovery Rectifiers * “G” Lead Pb -Free REVERSE VOLTAGE 50 TO 1000 VOLTS FORWARD CURRENT 1.0 AMPERE Features: *For Surface Mount Application *Glass Passivated Chip *Low Reverse Leakage Current *Low Forward Voltage Drop And High Current Capability

ml marking

Abstract: 101M 102M 103M 104M 105M 106M HFM101M HFM107-M
Contextual Info: HFM101M thru HFM107M Surface Mount Ultra Fast Recovery Rectifiers REVERSE VOLTAGE 50 TO 1000 VOLTS FORWARD CURRENT 1.0 AMPERE Features: *For Surface Mount Application *Glass Passivated Chip *Low Reverse Leakage Current *Low Forward Voltage Drop And High Current Capability

101M

Abstract: 102M 103M 104M 105M 106M HFM101M
Contextual Info: HFM101M thru HFM107M Surface Mount Ultra Fast Recovery Rectifiers REVERSE VOLTAGE 50 TO 1000 VOLTS FORWARD CURRENT 1.0 AMPERE Features: *For Surface Mount Application *Glass Passivated Chip *Low Reverse Leakage Current *Low Forward Voltage Drop And High Current Capability