MARKING H1 AMP Search Results

Contextual Info: r z 7 SGS-THOMSON ^ 7 # MeramiOTiBiiKiDe BCW69 BCW70 SMALL SIGNAL PNP TRANSISTORS Type Marking BCW69 H1 BCW70 H2 . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL AUDIO AMPLIFICATION AND

ST Microelectronics Transistors

Abstract: transistors marking HJ hj sot-23 Marking H2 marking .H2 BCW69 BCW70
Contextual Info: BCW69 BCW70 SMALL SIGNAL PNP TRANSISTORS • ■ ■ Type Marking BCW 69 H1 BCW 70 H2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AUDIO AMPLIFICATION AND SWITCHING 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM

Contextual Info: HI-SINCERITY Spec. No. : HE9012 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI340 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI340 is designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.

marking code k1

Abstract: A1 marking code amplifier marking A1 TRANSISTOR HI350 transistor mark code H1
Contextual Info: HI-SINCERITY Spec. No. : HE9008 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI350 PNP EPITAXIAL PLANAR TRANSISTOR Description The HI350 is designed for line operated audio output amplifier, switch mode power supply drivers and other switching applications.

transistor mark code H1

Abstract: A1 marking code amplifier HI649A y2 marking marking Y1 transistor
Contextual Info: HI-SINCERITY Spec. No. : HE9003 Issued Date : 1998.01.25 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI649A PNP EPITAXIAL PLANAR TRANSISTOR Description The HI649A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings TA=25°C

HE9013

Abstract: HI42C MARK Y1 Transistor
Contextual Info: HI-SINCERITY Spec. No. : HE9013 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI42C PNP EPITAXIAL PLANAR TRANSISTOR Description The HI42C is designed for use in general purpose amplifier, low speed switching applications.

HI41C

Contextual Info: HI-SINCERITY Spec. No. : HE9010 Issued Date : 1996.02.14 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI41C NPN EPITAXIAL PLANAR TRANSISTOR Description The HI41C is designed for use in general purpose amplifier and switching applications.

HI3669

Abstract: ic k1
Contextual Info: HI-SINCERITY Spec. No. : HE9029 Issued Date : 1997.11.14 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI3669 is designed for using in power amplifier applications, power switching application.

Contextual Info: HI-SINCERITY Spec. No. : HE9004 Issued Date : 1998.01.25 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings TA=25°C

Contextual Info: HI-SINCERITY Spec. No. : HE9001 Issued Date : 1996.02.28 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI31C NPN EPITAXIAL PLANAR TRANSISTOR Description The HI31C is designed for use in general purpose amplifier and switching applications.

Contextual Info: HI-SINCERITY Spec. No. : HE9002 Issued Date : 1994.03.02 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI32C PNP EPITAXIAL PLANAR TRANSISTOR Description The HI32C is designed for use in general purpose amplifier and low speed switching applications.

transistor mark code H1

Abstract: HI669A
Contextual Info: HI-SINCERITY Spec. No. : HE9004 Issued Date : 1998.01.25 Revised Date : 2006.12.06 Page No. : 1/4 MICROELECTRONICS CORP. HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings TA=25°C

Contextual Info: HI-SINCERITY Spec. No. : HE9028 Issued Date : 1994.01.25 Revised Date : 2004.09.24 Page No. : 1/4 MICROELECTRONICS CORP. HI10387 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI10387 is designed for general-purpose amplifier and low-speed switching applications.

transistor mark code H1

Abstract: HI10387 A1 marking code amplifier
Contextual Info: HI-SINCERITY Spec. No. : HE9028 Issued Date : 1994.01.25 Revised Date : 2004.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI10387 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI10387 is designed for general-purpose amplifier and low-speed switching applications.

HI882

Contextual Info: HI-SINCERITY Spec. No. : HE9014 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/5 MICROELECTRONICS CORP. HI882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI882 is designed for using in output stage of 10 W audio amplifier, voltage regulator, DC-DC converter and relay driver.

HI112

Abstract: transistor marking y2 IC DATE CODE power transistor Ic 4A NPN to - 251
Contextual Info: HI-SINCERITY Spec. No. : HE9033 Issued Date : 1998.07.01 Revised Date : 2005.12.20 Page No. : 1/5 MICROELECTRONICS CORP. HI112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI112 is designed for use in general purpose amplifier and low-speed switching applications.

HI882

Abstract: HE9014 transistor mark code H1 transistor Ic 1A NPN
Contextual Info: HI-SINCERITY Spec. No. : HE9014 Issued Date : 1996.04.12 Revised Date : 2006.12.06 Page No. : 1/5 MICROELECTRONICS CORP. HI882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI882 is designed for using in output stage of 10 W audio amplifier, voltage regulator,

Contextual Info: HI-SINCERITY Spec. No. : HE9015 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/5 MICROELECTRONICS CORP. HI772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HI772 is designed for using in output stage of 10 W audio amplifier, voltage regulator, DC-DC converter and relay driver.

H*772

Abstract: he9015 HI772
Contextual Info: HI-SINCERITY Spec. No. : HE9015 Issued Date : 1996.04.12 Revised Date : 2006.12.06 Page No. : 1/5 MICROELECTRONICS CORP. HI772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HI772 is designed for using in output stage of 10 W audio amplifier, voltage regulator,

Contextual Info: SMD Schottky Barrier Rectifiers CDBMH120-G Thru. CDBMH1150-G Reverse Voltage: 20 to 150 Volts Forward Current: 1.0 Amp RoHS Device Features SOD-123T -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

B817

Abstract: "B817" CE01 SFMC28-461
Contextual Info: SFMC28-461 EMI FILTER 2.7 AMP EMI INPUT FILTER 28 VOLT INPUT FEATURES • Fully qualified to Class H or K • Passive components for maximum tolerance in space environments • –55° to +125°C operation • 28 volt input • Up to 2.7 amps throughput current

Contextual Info: DXT5551 160V NPN TRANSISTOR IN SOT89 Features Mechanical Data •  BVCEO > 160V IC = 600mA High Collector Current        Complementary PNP Type: DXT5401 Ideal for Medium Power Switching or Amplification Applications Totally Lead-Free & Fully RoHS compliant Notes 1 & 2

SEF101FL

Abstract: SEF101FL~SEF107FL
Contextual Info: SEF101FL~SEF107FL Voltage 50 ~ 1000 V 1.0 Amp High Efficiency Recovery Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES     Low profile package Ideal for automated placement

Contextual Info: SEF101FL~SEF107FL Voltage 50 ~ 1000 V 1.0 Amp High Efficiency Recovery Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES     SOD-123FL Low profile package Ideal for automated placement