MARKING FZT Search Results
MARKING FZT Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy | 
|---|---|---|---|---|---|
| MG80C186-10/BZA |   | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |   | ||
| ICM7555MTV/883 |   | ICM7555MTV/883 - Dual marked (5962-8950303GA) |   | ||
| MQ80C186-10/BYA |   | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) |   | ||
| 54121/BCA |   | 54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) |   | ||
| 54AC20/SDA-R |   | 54AC20/SDA-R - Dual marked (M38510R75003SDA) |   | 
MARKING FZT Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| Marking Losa
Abstract: FZT705 marking FZT705 
 | OCR Scan | OT223 FZT605 FZT705 SYM10V FZT705 FZT704 Marking Losa marking FZT705 | |
| l05a
Abstract: 6k SOT223 marking FZT705 
 | OCR Scan | OT223 FZT605 FZT705 -100mA -10mA* -100hA -120V FZT705 FZT704 55-c\ l05a 6k SOT223 marking FZT705 | |
| transistor marking 2A H
Abstract: MARKING fzt transistor 3229 transistor C 3229 
 | OCR Scan | OT223 FZT604 FZT/04 FZT704 -100mA, fi20M FZT705 transistor marking 2A H MARKING fzt transistor 3229 transistor C 3229 | |
| FZT491A
Abstract: FZT591A transistor marking 2A H DSA003675 
 | Original | OT223 FZT591A FZT491A -100mA -500mA -20mA* -100mA* -50mA* FZT491A FZT591A transistor marking 2A H DSA003675 | |
| FZT600Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON FZT600 TRANSISTOR 1 Issu E 2- FEBRUARY 1995 FEATURES ! I ‘ * 2A continuous * Guaranteed 140 VOLT current c VCE[l hFE Specified up to 1A E PART MARKING DETAIL FZT600 - * ,BSOLUTE MAXIMUM PARAMETFR .—.-. | Original | OT223 FZT600 10OmA, 20MHz Col16ctor FZT600 | |
| MARKING fzt
Abstract: MARKING fzt 605 fzt 605 FZT704 FZT705 DSA003714 
 | Original | OT223 FZT705 100ms FZT704 MARKING fzt MARKING fzt 605 fzt 605 FZT704 FZT705 DSA003714 | |
| FZT705
Abstract: MARKING fzt FZT704 DSA003714 
 | Original | OT223 FZT704 100ms FZT705 FZT705 MARKING fzt FZT704 DSA003714 | |
| FZT749Contextual Info: FZT749 PNP Low Saturation Transistor Description 4 These devices are designed with high-current gain and low saturation voltage with collector currents up to 3 A continuous. 3 2 1 SOT-223 1. Base 2,4. Collector 3. Emitter Ordering Information Part Number Marking | Original | FZT749 OT-223 OT-223 FZT749 | |
| Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT705 ISSUE 2 - OCTOBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE  FZT 605 PART MARKING DETAIL  FZT705 C E C B ABSOLUTE MAXIMUM RATINGS. | Original | OT223 FZT705 100ms FZT704 | |
| VQC10Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT704 IS SU E 2 - SEPTEM BER 1995 FEA TU RES * 2A CONTINUOUS CURRENT * FA ST SW ITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COM PLEM ENTARY TYPE - FZT604 PART MARKING D ETAIL FZT704 •= ABSOLUTE MAXIMUM RATINGS. | OCR Scan | OT223 FZT704 FZT604 FZT705 Tamb-25 VQC10 | |
| Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT600 ISSUE 3  FEBRUARY 1997 FEATURES * 2A continuous current * 140 VOLT VCEO * Guaranteed hFE Specified up to 1A C 20k E Group B 1.00 PART MARKING DETAIL  +-=10V FZT600 C V 16k 0.90 + * I /I =100 | Original | OT223 FZT600 | |
| Contextual Info: DATE: 13th January, 2015 INFORMATIONAL PCN #: 2166 (REV 01) PCN Title: Addition of Date Code Information to Part Marking Dear Customer: This is an announcement of change(s) to products that are currently being | Original | ackT1951GTAÂ ZX5T849GTAÂ ZX5T851GTAÂ ZX5T853GTAÂ ZX5T949GTAÂ ZX5T951GTCÂ ZX5T951GTAÂ ZX5T953GTAÂ ZX5T955GTAÂ ZXM62N03GTAÂ | |
| mask rom
Abstract: FP-100A Hitachi DSAUTAZ006 
 | Original | HD64F2282 HD6432282 HD6432281 HD6432282( HD6432281( 100-pin FP-100A) mask rom FP-100A Hitachi DSAUTAZ006 | |
| MARKING KN1Contextual Info: NOT RECOMMENDED FOR NEW DESIGN USE FZT491 DZT491 NPN SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available DZT591C Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications | Original | FZT491 DZT491 DZT591C) OT-223 J-STD-020C MIL-STD-202, DS30946 MARKING KN1 | |
|  | |||
| Contextual Info: NOT RECOMMENDED FOR NEW DESIGN USE FZT658 DZT658 NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications | Original | FZT658 DZT658 OT-223 OT-223 J-STD-020C MIL-STD-202, DS31308 | |
| Contextual Info: NOT RECOMMENDED FOR NEW DESIGN USE FZT751 DZT751 LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available (DZT651) Ideally Suited for Automated Assembly Processes | Original | FZT751 DZT751 DZT651) OT-223 OT-223 J-STD-020C MIL-STD-202, DS31115 | |
| P315 transistorContextual Info: NOT RECOMMENDED FOR NEW DESIGN USE FZT788B DPLS315E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Features •        Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70m at 3A High DC Current Gain hFE > 300 at IC = 2A | Original | FZT788B DPLS315E DNLS412E) OT-223 DS31325 P315 transistor | |
| Contextual Info: NOT RECOMMENDED FOR NEW DESIGN USE FZT688B DNLS412E LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Features •        Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 57.5m at 4A High DC Current Gain hFE > 400 at IC = 3A | Original | FZT688B DNLS412E DPLS315E) OT-223 DS31324 | |
| Contextual Info: Not recommended for new design. Alternative is FZT789A DPLS325E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Features N •        Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70m at 3A High DC Current Gain hFE > 200 at IC = 2A | Original | FZT789A DPLS325E DNLS320E) OT-223 OT-223 J-STD-020D DS31327 | |
| transistor fzt651
Abstract: MARKING KN2 
 | Original | FZT651 DZT651 DZT751) OT-223 OT-223 J-STD-020C MIL-STD-202, 20out DS30809 transistor fzt651 MARKING KN2 | |
| FZT657Contextual Info: Transistors SMD Type NPN Silicon Planar Medium Power Transistor FZT657 SOT-223 Unit: mm +0.2 3.50-0.2 6.50 Features +0.1 3.00-0.1 Low saturation voltage +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 Collector 3 2 | Original | FZT657 OT-223 100mA, 20MHz FZT657 | |
| Contextual Info: Transistors IC SMD Type PNP Silicon Planar Medium Power High Transistor FZT1151A SOT-223 • Features Unit: mm +0.2 3.50-0.2 ● Low saturation Voltage ● High Gain +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 +0.2 0.90-0.2 +0.1 3.00-0.1 +0.3 7.00-0.3 | Original | FZT1151A OT-223 -10mA -500mA; -70mA -250mA | |
| TRANSISTOR SMD 491Contextual Info: Transistors IC SMD Type NPN Silicon Planar Medium Power Transistor FZT491 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 ● Continuous Collector Current: IC=1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● Power Dissipation: PC=2W +0.2 0.90-0.2 +0.1 | Original | FZT491 OT-223 500mA; 100mA TRANSISTOR SMD 491 | |
| Contextual Info: Transistors IC SMD Type Product specification FZT489 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 ● Continuous Collector Current: IC=1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● Power Dissipation: PC=2W +0.2 0.90-0.2 +0.1 3.00-0.1 +0.3 7.00-0.3 | Original | FZT489 OT-223 100mA 200mA | |