MARKING E5 AMPLIFIER Search Results

sot-23-5 MARK e5

Abstract: E4 SOT-23-5 mark E5 SOT-25 mark E4 SOT-23-5 4606 inverter ic transistor 4606 mosfet e5 operational Amplifier in SOT-23-5 sot-23-5 marking E5 XC6210A XC6210B
Contextual Info: XC6210 Series ETR0317_002 High Current, High Speed LDO Regulators •GENERAL DESCRIPTION The XC6210 series are precise, low noise, high current, positive voltage low dropout regulators. They are fabricated using Torex’s CMOS process. The series features a voltage reference, an error amplifier, a current limiter, and a phase compensation circuit plus a driver transistor.

sot-23-5 MARK e5

Abstract: e5 operational Amplifier in SOT-23-5 mark E5 SOT-25 Z X C SOT-89-5 mark E4 SOT-23-5 low voltage regulator using ic 723 mark 641 sot mark E4 SOT-25 XC6210B XC6210C
Contextual Info: XC6210 Series ETR0317_002 High Current, High Speed LDO Regulators •GENERAL DESCRIPTION The XC6210 series are precise, low noise, high current, positive voltage low dropout regulators. They are fabricated using Torex’s CMOS process. The series features a voltage reference, an error amplifier, a current limiter, and a phase compensation circuit plus a driver transistor.

XC6210

Abstract: XC6210A XC6210B XC6210C XC6210D
Contextual Info: XC6210 Series ETR0317_004 High Current, High Speed LDO Regulators •GENERAL DESCRIPTION The XC6210 series are precise, low noise, high current, positive voltage low dropout regulators. They are fabricated using Torex’s CMOS process. The series features a voltage reference, an error amplifier, a current limiter, and a phase compensation circuit plus a driver transistor.

Contextual Info: XC6210 Series ETR0317_002 High Current, High Speed LDO Regulators •GENERAL DESCRIPTION The XC6210 series are precise, low noise, high current, positive voltage low dropout regulators. They are fabricated using Torex’s CMOS process. The series features a voltage reference, an error amplifier, a current limiter, and a phase compensation circuit plus a driver transistor.

Contextual Info: Product Specification PE4150 Product Description The PE4150 is an ultra-high linearity Quad MOSFET mixer with an integrated LO amplifier. The LO amplifier allows for LO drive levels of less than 0dBm to produce IIP3 values similar to a Quad MOSFET Array driven with a 15 dBm LO

A1587

Abstract: 2SA1587 MARKING J1A 2SC4117
Contextual Info: TO SH IBA 2SA1587 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 587 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • Unit in mm 2.1 ± 0.1 High Voltage : V^ e q = —120V ±0.1 “•1.25 -H Excellent hjpg Linearity

sot-89 marking E5

Abstract: E5 sot223 E5 sot89 marking E5 amplifier ceramic capacitor E5 sot-89 E5 CM2865 MARKING E5 SOT89 2865a marking E5 sot-89
Contextual Info: CM2865 A E5 350mA CMOS LDO HIGH ACCURACY VOUT 1.0% GENERAL DESCRIPTION FEATURES The CM2865/A family is a positive voltage linear regulator ‹ Very Low Dropout Voltage developed utilizing CMOS technology featured low quiescent ‹ Low Current Consumption: Typ. 30 A, Max. 35μA

vv105

Abstract: era-3 e3 ERA-3SM E3
Contextual Info: MONOLITHIC AMPLIFIERS 50Ω Drop-In & Surface Mount BROADBAND DC to 8 GHz ERA ERA-SM All specifications at 25°C J FREQ. GHz MODEL fl - fu NO. GAIN, dB Typical over frequency, GHz 0.1 1 2 3 4 6 8 MAXIMUM POWER, dBm at 2 GHz* DYNAMIC RANGE at 2 GHz* Output

marking E5 amplifier

Abstract: ERA monolithic amplifier vv105 mini ERA-3SM VV105 3SM diode ERA-4 ERA-1 ERA-4SM nf ERA-6SM
Contextual Info: MONOLITHIC AMPLIFIERS 50Ω Drop-In & Surface Mount BROADBAND DC to 8 GHz ERA ERA-SM All specifications at 25°C J FREQ. GHz MODEL NO. fl - fu GAIN, dB Typical over frequency, GHz 0.1 1 2 3 4 6 8 THERMAL RESISat 2 GHz* at 2 GHz* TANCE Output In Out θjc,

ERA-3SM E3

Abstract: era-3 e3 ERA-2SM E2 ERA-3SM 03 ERA-6 Mini-Circuits RF Amplifier
Contextual Info: MONOLITHIC AMPLIFIERS BROADBAND 50Ω Drop-In & Surface Mount DC to 8 GHz ERA ERA-SM All specifications at 25°C J FREQ. GHz MODEL fl - fu NO. GAIN, dB Typical over frequency, GHz 0.1 1 2 3 4 6 8 MAXIMUM POWER, dBm at 2 GHz* DYNAMIC RANGE at 2 GHz* Output

Mini-Circuits ERA-1SM

Abstract: ERA-3SM 99 marking E5 amplifier ERA-4SM nf 3SM diode cb amplifier ERA-1SM ERA-4SM marking code k1 ERA-3SM E3
Contextual Info: MONOLITHIC AMPLIFIERS BROADBAND 50Ω Drop-In & Surface Mount DC to 8 GHz ERA ERA-SM All specifications at 25°C J FREQ. GHz MODEL NO. fl - fu GAIN, dB Typical over frequency, GHz 0.1 1 2 3 4 6 8 MAXIMUM DYNAMIC POWER, dBm RANGE at 2 GHz* at 2 GHz* TANCE see

e5270

Abstract: 2SA1256 2018b
Contextual Info: Ordering number:EN1056C PNP Epitaxial Planar Silicon Transistors 2SA1256 High Frequency Amp Applications Applications Package Dimensions • Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, and IF amplifiers. unit:mm 2018B [2SA1256]

marking E5 amplifier

Abstract: mdb 501 E5 monolithic amplifier M11 marking OPA633 OPA633AD isolation amplifier ad
Contextual Info: DIE PRODUCTS « Ü R R -B R Q W M » OPA633 DIE High Speed Buffer AMPLIFIER DIE FEATURES DESCRIPTION • • • • The OPA633 die is a monolithic unity-gain buffer am­ plifier featuring very wide bandwidth and high slew rate. A dielectric isolation process incorporating both

era2

Abstract: ERA-50SM era-4 Mini-circuits marking code
Contextual Info: Drop-In & Surface Mount Monolithic Amplifiers BROADBAND 50Ω DC-8 GHz + RoHS compliant in accordance with EU Directive 2002/95/EC The +Suffix has been added in order to identify RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications.

Contextual Info: SN54AS250A, SN74AS250A 1ĆOFĆ16 DATA GENERATORS/MULTIPLEXERS WITH 3ĆSTATE OUTPUTS SDAS137A − DECEMBER 1983 − REVISED DECEMBER 1994 • • • • SN54AS250A . . . JT PACKAGE SN74AS250A . . . DW OR NT PACKAGE TOP VIEW 4-Line to 1-Line Multiplexers That Can

Contextual Info: SN54AS250A, SN74AS250A 1ĆOFĆ16 DATA GENERATORS/MULTIPLEXERS WITH 3ĆSTATE OUTPUTS SDAS137A − DECEMBER 1983 − REVISED DECEMBER 1994 • • • • SN54AS250A . . . JT PACKAGE SN74AS250A . . . DW OR NT PACKAGE TOP VIEW 4-Line to 1-Line Multiplexers That Can

Contextual Info: SN54AS250A, SN74AS250A 1ĆOFĆ16 DATA GENERATORS/MULTIPLEXERS WITH 3ĆSTATE OUTPUTS SDAS137A − DECEMBER 1983 − REVISED DECEMBER 1994 • • • • SN54AS250A . . . JT PACKAGE SN74AS250A . . . DW OR NT PACKAGE TOP VIEW 4-Line to 1-Line Multiplexers That Can

Contextual Info: Document Number: MRF5S9101N Rev. 4, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101NR1 MRF5S9101NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier

MRF5S9101N

Abstract: 200B A113 A114 A115 AN1955 C101 JESD22 MRF5S9101NBR1 MRF5S9101NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S9101N Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101NR1 MRF5S9101NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier

SMD A06 AMPLIFIER

Abstract: MAV-4 MMIC MAR-6 MMIC MAR-3 MAV11 MSA01104 MAV-3 MMIC MAR-1 MAV3 A04 monolithic amplifier
Contextual Info: MINI-CIRCUITS / AVANTEK MONOLITHIC AMPLIFIERS DC TO 8GHz 10GHz Usable MARKING IDENTIFICATION / EQUIVALENT Model Plastic Mini-circuits Equivalent SMD Mini-Circuits Equivalent 83mil HP/Avantek Equivalent Plastic HP/Avantek Equivalent SMD HP/Avantek Other Known

marking .H2

Abstract: 3SK258 Marking H2
Contextual Info: TO SH IBA 3SK258 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK258 TV TUNER, VHF RF AMPLIFIER APPLICATIONS FM TUNER APPLICATIONS • • • Superior Cross Modulation Performance. Low Reverse Transfer Capacitance : Crss = 0.015pF Typ.

2SA1256

Abstract: 5P J TRANSISTOR MARKING
Contextual Info: O rd e rin g n u m b e r :EN 1056C - _ NO.1056C 2SA1256 PNP Epitaxial Planar Silicon Transistor High-Frequency Amp Applications A pplications • Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, and IF amplifiers. F e a tu re s

MMBR911LT1

Abstract: sot23 transistor marking ZTf TIL 414 MARKING ZTf SOT23 TRANSISTOR
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor Designed for low noise, wide dynamic range fron t-e nd amplifiers and low-noise VCO’s. Available in a surface-mountable plastic package. This Motorola small-signal plastic transistor offers superior quality and performance

ERA-02

Abstract: 3SM diode era06 marking code mcl VV105 ERA-1SM Mini-Circuits ERA-1SM ERA-SM WW107 ERA-3SM 99
Contextual Info: MONOLITHIC AMPLIFIERS BROADBAND 50Ω DC to 8 GHz + RoHS compliant in accordance with EU Directive 2002/95/EC The + suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications. ERA ERA-SM all specifications at 25°C