MARKING DIODE KE Search Results

Contextual Info: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no.

DIODE MARKING 534

Abstract: DSA 010
Contextual Info: DSA 15 IM 200 UC tentative V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 0.78 V Part number DSA 15 IM 200 UC 1 2 3 Marking on Product: SFMAUI Backside: cathode Features / Advantages:

BAT54W

Contextual Info: RECTRON BAT54W SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-323 SURFACE MOUNT SCHOTTKY BARRIER DIODE FEATURES * Low forward voltage drop * Fast switching * Uitra - small surface mount package * PN Junction guard ring for transient and ESD protection Marking: KL5

BAT54CW

Contextual Info: RECTRON BAT54CW SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-323 SURFACE MOUNT SCHOTTKY BARRIER DIODE FEATURES * Low forward voltage drop * Fast switching * Uitra - small surface mount package * PN Junction guard ring for transient and ESD protection Marking: KL7

Contextual Info: 1N4148 / 1N4448 FAST SWITCHING DIODE Features Fast Switching Speed General Purpose Rectification Silicon Epitaxial Planar Construction T Mechanical Data D Case: D O -35 Leads: Solderable per M IL-STD-202, Method 208 Polarity: Cathode Band Marking: Type Number

marking CODE S2

Contextual Info: 1N6263WS SILICON SCHOTTKY BARRIER DIODE for general purpose applications PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 S2 Top View Marking Code: "S2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak Reverse Voltage

LL4151

Contextual Info: LL4151 SURFACE MOUNT FAST SWITCHING DIODE Features • · · Fast Switching High Reliability High Conductance C B A Mechanical Data · · · · · Case: MiniMELF, Glass Terminals: Solderable per MIL-STD-202, Method 208 Marking: Cathode Band Only Polarity: Cathode Band

1N4151

Abstract: LL4151
Contextual Info: 1N4151 FAST SWITCHING DIODE Features • · · · Fast Switching High Reliability High Conductance Surface Mount Version Available LL4151 B A A C D Mechanical Data · · · · · DO-35 Case: DO-35, Plastic Leads: Solderable per MIL-STD-202, Method 208 Marking: Type Number

VISHAY diode MARKING ED

Abstract: VISHAY MARKING ED diode k77 K77 diode
Contextual Info: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case

marking P2 sot-23

Abstract: marking wa sot-23
Contextual Info: CONNECTION DIAGRAMS 3 3 3 1201 3 1203 24 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204 27 MMBD1203 26 MMBD1205 28 1 1 2 3 3 1204 1 1205 2 1 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

transistor 1201 1203 1205

Abstract: MMBD1201 MMBD1203 MMBD1204A MMBD1205A wA MARKING SOT-23 SERIES DIODE marking P2 sot-23 fairchild s sot-23 Device Marking
Contextual Info: CONNECTION DIAGRAMS 3 3 1201 3 1203 24 3 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 1 1 2 3 3 1204 1 2 1 1205 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

irlru9343

Abstract: IRLR9343 55v audio amplifier IRLU9343 IRLU9343-701 marking code 19B
Contextual Info: PD - 95850 DIGITAL AUDIO MOSFET IRLR9343 IRLU9343 IRLU9343-701 Features Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency

IRLU4343-701

Abstract: IRLR4343 IRLU4343
Contextual Info: PD - 95851 DIGITAL AUDIO MOSFET IRLR4343 IRLU4343 IRLU4343-701 Features Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency

97001A

Abstract: AN1001 AN-994
Contextual Info: PD - 97001A PROVISIONAL IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF SMPS MOSFET Applications l High frequency DC-DC converters l Plasma Display Panel l Lead-Free HEXFET Power MOSFET Key Parameters VDS VDS Avalanche min. RDS(ON) max @ 10V TJ max Benefits

IRLIB4343

Contextual Info: PD - 95857A DIGITAL AUDIO MOSFET IRLIB4343 Features l l l l l l l Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDSON for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI

55v audio amplifier

Abstract: IRLIB9343 IRFI840G
Contextual Info: PD - 95852 DIGITAL AUDIO MOSFET IRLIB9343 Features Advanced Process Technology l Key Parameters Optimized for Class-D Audio Amplifier Applications l Low RDSON for Improved Efficiency l Low Qg and Qsw for Better THD and Improved Efficiency l Low Qrr for Better THD and Lower EMI

KGT15N120KDA

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KGT15N120KDA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies UPS , general inverters.

KGT15N120NDH

Abstract: 600v
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KGT15N120NDH General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH induction heating , microwave oven, etc. FEATURES ・High speed switching

kgt25n120

Abstract: KGT25N120NDH
Contextual Info: SEMICONDUCTOR KGT25N120NDH TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH induction heating , microwave oven, etc. FEATURES ・High speed switching

Contextual Info: TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology

IRF6775MPbF

Contextual Info: IRF6775MTRPbF DIGITAL AUDIO MOSFET Features • Latest MOSFET Silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low RDS on for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI

AN-994

Contextual Info: PD - 97231A IRFS4228PbF IRFSL4228PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

N-Channel

Contextual Info: TSM042N03CS 30V N-Channel Power MOSFET SOP-8 Pin Definition: 1. Source 8. 2. Source 7. 3. Source 6. 4. Gate 5. Key Parameter Performance Drain Drain Drain Drain Parameter Value Unit VDS 30 V RDS on (max) VGS = 10V 4.2 VGS = 4.5V 6 Qg 24 nC Block Diagram Ordering Information

AME41-4096

Abstract: AME41CEAS AME41CEAT AME41CEET AME41FEET AME41FEHA
Contextual Info: Analog Microelectronics, Inc. Micropower Voltage Reference Diode AME41-4096 n General Description n Key Features The AME41-4096 is a micropower 2-terminal band-gap voltage regulator diode. It operates over a 40µA to 20mA current range. Each circuit is trimmed at wafer sort to