MARKING D8D Search Results

Contextual Info: Data Sheet Rev.1.0 25.02.2011 4096MB DDR3 – SDRAM DIMM 240 Pin UDIMM Features: SGU04G64B1BD2MT-xxR • 4GByte in FBGA Technology •      RoHS compliant Options:    Data Rate / Latency DDR3 1066 MT/s CL7 DDR3 1333 MT/s CL9 Marking

Contextual Info: Data Sheet Rev.1.0 25.02.2011 4096MB DDR3 – SDRAM DIMM 240 Pin UDIMM Features: SGU04G64B1BD2MT-xxR • 4GByte in FBGA Technology •      RoHS compliant Options:    Data Rate / Latency DDR3 1066 MT/s CL7 DDR3 1333 MT/s CL9 Marking

B63URCB

Contextual Info: Data Sheet Rev.1.0 04.02.2011 2048MB DDR3 – SDRAM DIMM 240 Pin UDIMM Features: SGU02G64B1BG2SA-xxR • 2GByte in FBGA Technology •      RoHS compliant Options:  Data Rate / Latency DDR3 1066 MT/s CL7 DDR3 1333 MT/s CL9 Marking -BB -CC

Contextual Info: Data Sheet Rev.1.0 21.01.2011 2048MB DDR3 – SDRAM SO-DIMM 204 Pin SO-DIMM Features: SGN02G64E1BG2SA-xxRT • 2GByte in FBGA Technology •  RoHS compliant   Options:  Data Rate / Latency DDR3 1066 MT/s CL7 DDR3 1333 MT/s CL9 Marking -BB -CC 

Contextual Info: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16 54

A20-A11

Contextual Info: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC2M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16

AS8FLC2M32

Abstract: A3760 A20-A11 HIP-66
Contextual Info: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC2M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16

Contextual Info: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16

AS8FLC1M32BQT-120/Q

Contextual Info: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16

AS8FLC2M32

Abstract: A3760
Contextual Info: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC2M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16

Contextual Info: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16

Contextual Info: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16

Contextual Info: FLASH PRELIMINARY AS8FLC1M32A Hermetic, Multi-Chip Module MCM FIGURE 1: PIN ASSIGNMENT (Top View) •      OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 07 59

Contextual Info: FLASH AS8FLC2M32 • • • • • • • OPTION Access Speed 70ns* 90ns 100ns 120ns *Contact Factory Package Ceramic Quad Flat Pack Ceramic Hex Inline Pack MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 07 78 13 57 14 76 15 55 16 54

krc 118 048

Abstract: ZM02
Contextual Info: ADVANCE 2. 4 WIEG X 64 SDRAM DIMMs l^ iid R o r s i SYNCHRONOUS DRAM MODULE MT8LSD T 264A MT16LSD(T)464A FEATURES OPTIONS (DE-9) 2 Meg x 64 TSO P (shown), (DE-10) 4 Meg x 64 TSOP, (DE-25) 2 Meg x 64 SOJ, (DE-26) 4 Meg x 64 SOJ Sm Tm Q pj MARKING • Components

Contextual Info: FLASH AS8FLC1M32 • • • • • • • OPTION Access Speed 70ns* 90ns 100ns 120ns *Contact factory MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 07 57 14 76 I/O5 I/O6 I/O7 GND I/O8 I/O9 15 55 16 54 17 53 18 52 19 51 20 50 I/O10

SMD MARKING CODE WE3

Abstract: 5962-0920503HXA A18 marking A3760 5962-0920502HYA 5962-0920503HX
Contextual Info: FLASH AS8FLC1M32 • • • • • • OPTION Access Speed 70ns* 90ns 100ns 120ns *Contact factory MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 07 57 14 76 I/O5 I/O6 I/O7 GND I/O8 I/O9 15 55 16 54 17 53 18 52 19 51 20 50 I/O10 I/O11

IC801

Abstract: IPC-A-600 ze 003 ic ze 003 ic803 RN10D PC401 CONDUCTIVE INK IC-700 artec
Contextual Info: F A B R IC A T IO N L 2 4 S IL K S C R E E N T O P ( L 2 6 ) R O U T IN G T O P (L 1 ) 145x100M M - 1 4 5 .0 m m - TMC457 Eval Board v1.0 L800 + D8D0 • XBOO m GND Cl +48V C801 E 3 [•~~1[~1 C805 C8W I GND A I_/iBTffl . C8< R704 I E U a R B O l1

code C3J

Abstract: marking code C3J marking c3j marking code 8hs
Contextual Info: LH53B8600D 8M Mask ROM Model No.: LHMB86xx Spec No.: EL099183 Issue Date: November 6, 1997 LH53B8600D •Handle this docuaent carefully for it contains Material protected by international copyright la». Any reproduction, full or in part, of this material is prohibited

Contextual Info: LH53CV32800T 32M Mask ROM Model No.: LHME53xx Spec No.: EL097130 Issue Date: July 28, 1998 SHARP LH53CV32800T •Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited

AA1050

Abstract: marking code maxim label
Contextual Info: SHARP SPEC No. E L 0 9 9 1 9 3 ISSUE: Nov. 26 1997 To ; S P E C I F I CAT I O N S Product Type 8M b it MASK ROM LHMC8 6 xx Model No. L H 5 3 C 8 6 00N &This specifications contains 14 pages including the cover and appendix If you have any objections, please contact us before issuing purchasing order.

Contextual Info: DATA BULLETIN MX029 Dual Digitally Controlled Amplifier PRELIMINARY INFORMATION Features Applications          2 Digitally Controlled Amplifiers ±48dB Gain/Attenuation in 2dB Steps + Mute Individual Control with a 14-Bit Serial Word Separate Fixed Gain Buffer Amplifier

marking code GIF

Abstract: NMB MANUFACTURER DDEE177 LH53C8600N CD0-D15
Contextual Info: SHARP LH53C8S00N C L O N T E N T S General Description P. 2 2. Features P. 2 3. Block Diagrai P. 3 4. Pin Connections P. 4 5. Pin Description P. 4 6. Absolute laxiauatatings P. 5 7. Operating Kanges P. 5 î, P.C. Electrical Characteristics P.5 9. A. C. Electrical Characteristics

Contextual Info: L H 5 3 B 8 V 8M Mask ROM Model No.: LHMB8Vxx Spec No.: EL099187 Issue Date: November 6, 1997 D SHARP LH53B8V00D •Handle this docuaent carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited