MARKING CS TOSHIBA Search Results

TMP82C51

Abstract: TMP82C51AP-2 82C51A MPU85 TMP82C51AM-10 TMP82C51AP
Contextual Info: TOSHIBA TMP82C51A TMP82C51AP-2 /TMP82C51AP-10 TMP82C51 AM-2/TMP82C51 AM-10 PROGRAMMABLE COMMUNICATION INTERFACE 1. GENERAL DESCRIPTION The TMP82C51A is the industry standard U niversal Synchronous/Asynchronous Receiver/Transm itter USART th a t is fabricated using C-MOS silicon gate technology.

EE 20 bobbin

Abstract: ei ferrite core 3SK260 EE 16 bobbin KY transistor EE 45 bobbin EE 55 bobbin
Contextual Info: TOSHIBA 3SK260 TOSHIBA FIELD EFFECT TRANSISTOR TV TUNER VHF MIXER APPLICATIONS SILICON N CHANNEL DUAL GATE MOS TYPE 3SK260 VHF RF AMPLIFIER APPLICATIONS • • High Conversion Gain : G e s = 24.5dB Typ. Low Noise Figure : NFGg = 3.3dB (Typ.) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TC9WMA1FK TOSHIBA CMOS Digital Integrated Circuits Silicon Monolithic TC9WMA1FK 1,024-Bit 128 x 8 Bit Serial EEPROM The TC9WMA1FK is electrically erasable/programmable nonvolatile memory (EEPROM). Features • Serial data input/output • Programmable in units of one word and collectively erasable

Contextual Info: TC9WMA1FK TOSHIBA CMOS Digital Integrated Circuits Silicon Monolithic TC9WMA1FK 1,024-Bit 128 x 8 Bit Serial EEPROM The TC9WMA1FK is electrically erasable/programmable nonvolatile memory (EEPROM). Features • Serial data input/output • Programmable in units of one word and collectively erasable

Contextual Info: TC9WMA1FK TOSHIBA CMOS Digital Integrated Circuits Silicon Monolithic TC9WMA1FK 2 1,024-Bit 128 x 8 Bit Serial E PROM The TC9WMA1FK is electrically erasable/programmable nonvolatile memory (E2PROM). Features • Serial data input/output • Programmable in units of one word and collectively erasable

Contextual Info: TC9WMA1FK TOSHIBA CMOS Digital Integrated Circuits Silicon Monolithic TC9WMA1FK 2 1,024-Bit 128 x 8 Bit Serial E PROM The TC9WMA1FK is electrically nonvolatile memory (E2PROM). erasable/programmable Features • Serial data input/output • Programmable in units of one word and collectively erasable

Contextual Info: TOSHIBA 3SK260 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK260 Unit in mm TV TUNER VHF M IXER APPLICATIONS. VHF RF AM PLIFIER APPLICATIONS. • • 2.1 +0. 1 High Conversion Gain : Gç;s = 24.5dB Typ. Low Noise Figure : NFç;g = 3.3dB (Typ.)

3SK260

Abstract: EI type bobbin FL 210
Contextual Info: TOSHIBA 3SK260 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK260 Unit in mm TV TUNER VHF M IXER APPLICATIONS. VHF RF AM PLIFIER APPLICATIONS. • • 2.1 +0. 1 High Conversion Gain : G es = 24.5dB Typ. Low Noise Figure : NFç;g = 3.3dB (Typ.)

Contextual Info: TC9WMA2FK TOSHIBA CMOS Digital Integrated Circuits Silicon Monolithic TC9WMA2FK 2,048-Bit 256 x 8 Bit Serial E2PROM The TC9WMA2FK is electrically erasable/programmable nonvolatile memory (E2PROM). Features • Serial data input/output • Programmable in units of one word and collectively erasable

Contextual Info: TC9WMA1FK TOSHIBA CMOS Digital Integrated Circuits Silicon Monolithic TC9WMA1FK 1,024-Bit 128 x 8 Bit Serial EEPROM The TC9WMA1FK is electrically erasable/programmable nonvolatile memory (EEPROM). Features • Serial data input/output • Programmable in units of one word and collectively erasable

Contextual Info: TC9WMA2FK TOSHIBA CMOS Digital Integrated Circuits Silicon Monolithic TC9WMA2FK 2,048-Bit 256 x 8 Bit Serial E2PROM The TC9WMA2FK is electrically erasable/programmable nonvolatile memory (E2PROM). Features • Serial data input/output • Programmable in units of one word and collectively erasable

TC9WMC1FK

Abstract: TC9WMC2FK
Contextual Info: TC9WMC1FK,TC9WMC2FK Preliminary TOSHIBA CMOS Digital Integrated Circuits Silicon Monolithic TC9WMC1FK,TC9WMC2FK TC9WMC1FK: 1024-Bit 64 x 16-Bit 3-Wire Serial EEPROM TC9WMC2FK: 2048-Bit (128 × 16-Bit) 3-Wire Serial EEPROM The TC9WMC1FK and TC9WMC2FK are electrically

TC9WMA2FK

Contextual Info: TC9WMA2FK TOSHIBA CMOS Digital Integrated Circuits Silicon Monolithic TC9WMA2FK 2,048-Bit 256 x 8 Bit Serial E2PROM The TC9WMA2FK is electrically erasable/programmable nonvolatile memory (E2PROM). Features • Serial data input/output • Programmable in units of one word and collectively erasable

TC9WMC2FK

Contextual Info: TC9WMC1FK/FU,TC9WMC2FK/FU TOSHIBA CMOS Digital Integrated Circuits Silicon Monolithic TC9WMC1FK,TC9WMC1FU,TC9WMC2FK,TC9WMC2FU TC9WMC1FK/FU: 1024-Bit 64 x 16-Bit 3-Wire Serial EEPROM TC9WMC2FK/FU: 2048-Bit (128 × 16-Bit) 3-Wire Serial EEPROM The TC9WMC1 and TC9WMC2 are electrically

Contextual Info: TC9WMC1FK/FU,TC9WMC2FK/FU TOSHIBA CMOS Digital Integrated Circuits Silicon Monolithic TC9WMC1FK,TC9WMC1FU,TC9WMC2FK,TC9WMC2FU TC9WMC1FK/FU: 1024-Bit 64 x 16-Bit 3-Wire Serial EEPROM TC9WMC2FK/FU: 2048-Bit (128 × 16-Bit) 3-Wire Serial EEPROM The TC9WMC1 and TC9WMC2 are electrically

Contextual Info: TOSHIBA U1GWJ2C49 TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE U1 G W J 2 C 4 9 SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Average Output Rectified Current : Io = lA • Repetitive Peak Reverse Voltage : V r r m —40V

Contextual Info: TOSHIBA TG2006F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2006F 1.9GHz BAND POWER AMPLIFIER PHS, DIGITAL CORDLESS TELECOMMUNICATION FEATURES • Positive Voltage Operation : Vd = 3V, V g = 0 to 3V • Low Current Consumption : It = 130mA Typ.

toshiba lead free program

Contextual Info: TC9WMC1FK/FU,TC9WMC2FK/FU TOSHIBA CMOS Digital Integrated Circuits Silicon Monolithic TC9WMC1FK,TC9WMC1FU,TC9WMC2FK,TC9WMC2FU TC9WMC1FK/FU: 1024-Bit 64 x 16-Bit 3-Wire Serial EEPROM TC9WMC2FK/FU: 2048-Bit (128 × 16-Bit) 3-Wire Serial EEPROM The TC9WMC1 and TC9WMC2 are electrically

TLP3507A

Contextual Info: GaAs IRED & PHOTO-TRIAC TLP3507A Unit in mm TRIAC DRIVER PR OGRAMMABLE C O NTROLLERS A C- O UT P UT MODULE SOLID STATE RELAY The TOSHIBA TLP3507A consists of a zero voltage crossing turn-on photo-triac optically coupled to a gallium arsenide infrared emitting diode in a

Contextual Info: TOSHIBA TMP8251A PROGRAMM ABLE COMMUNICATION INTERFACE TM P8251AP 1. GENERAL DESCRIPTION The TMP8251AP is the industry standard Universal Synchronous/Asynchoronous Receiver/Transmitter USART that is fabricated using N-channel silicon gate MOS technology.

JDP2S05FS

Abstract: 042PF
Contextual Info: JDP2S05FS TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S05FS Unit:mm UHF~VHF Band RF Switch Applications 0.6±0.05 Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. 0.1 Characteristics Symbol Rating

JDP2S02ACT

Contextual Info: JDP2S02ACT TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02ACT Unit: mm + 0.02 0.38 - 0.03 UHF~VHF Band RF Switch Applications Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 30 V Forward current IF 50 mA Junction temperature

Contextual Info: JDP2S05FS TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S05FS Unit:mm UHF~VHF Band RF Switch Applications 0.6±0.05 Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. 0.1 Characteristics Symbol Rating

JDP2S05CT

Contextual Info: JDP2S05CT TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S05CT UHF~VHF Band RF Switch Applications Unit: mm Low series resistance: rs = 1.5 Ω typ. • Low capacitance: CT = 0.32 pF (typ.) Symbol Rating Unit Reverse voltage VR 20 V Forward current IF 50 mA