MARKING CODE YW DIODE Search Results

marking yw

Abstract: 9632 transistor 9632 transistor marking 6c 95060
Contextual Info: Part Marking Information Vishay High Power Products FlipKY 0.5 A/0.75 A Part number Lot number Ball 1 location mark Y L YW Workweek Year PART NUMBER MARKING FCSP0530TR D FCSP0530ETR C FCSP05H40TR F FCSP05H40ETR E FCSP0730TR Y FCSP07H40TR W TABLE 1 W = 1 TO 26 IF PRECEDED

9632 transistor

Abstract: SPN MARKING FCSP140 marking yw transistor marking 6c FCSP1H40LTR YW marking FCSP240 4 LETTER mark code 95281
Contextual Info: Part Marking Information Vishay High Power Products FlipKY 1.0 A/1.5 A Ball 1 location mark U Part number L YW Lot number Workweek Year PART NUMBER MARKING FCSP130LTR U FCSP140LTR N FCSP1H40LTR M FCSP230LTR R FCSP240LTR S FCSP2H40LTR T TABLE 1 W = 1 TO 26 IF PRECEDED

USB Downstream Port Filter & TVS For EMI Filtering and ESD Protection

Abstract: ECLAMP2122S sot-23 marking code 352 marking code YW DIODE
Contextual Info: EClamp2122S USB Downstream Port Filter & TVS For EMI Filtering and ESD Protection PROTECTION PRODUCTS - EMIClamp Description Features The EClamp 2122S is combination EMI filter and line termination device with integrated TVS diodes for use on USB 2.0 interfaces. This device utilizes solid-state

Contextual Info: EMI7403 Product Preview EMI Filter with ESD Protection for MicroSD Card Applications http://onsemi.com Product Description The EMI7403 is a combination EMI filter and line termination device with integrated TVS diodes for use on Multimedia Card interfaces. This state−of−the−art device utilizes solid−state, silicon−

Contextual Info: 1SMC5352 Taiwan Semiconductor CREAT BY ART Surface Mount Zener Diodes FEATURES - Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: Product specification DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V • • • • • • • • ID TA = 25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

4148C

Contextual Info: Micmsemi M M • Scottsdale, AZ m Progress Powered by Technology S24-4148CC 8700 E. Thomas Road Scottsdale, A Z 85251 602 941-6300 A nd S24-4150CC Switching Diode Array FEATURES • • • 18 isolated lilies, 6 common Standard 24 pin Surface M ount Package

Contextual Info: EClamp2454P ESD/EMI Protection for Color LCD Interfaces PRELIMINARY PROTECTION PRODUCTS - EMIClampTM Description Features The EClampTM2454P is a L-C low pass filter array with integrated TVS diodes. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic

Contextual Info: EMI7403 EMI Filter with ESD Protection for MicroSD Card Applications Product Description http://onsemi.com The EMI7403 is a combination EMI filter with integrated TVS diodes for use on Multimedia Card interfaces. This state−of−the−art device utilizes solid−state, silicon− avalanche technology for superior

RailClamp® Low Capacitance TVS Diode Array

Abstract: RCLAMP0554S marking code YW DIODE
Contextual Info: RClamp0554S RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS - RailClamp® Description Features A RailClamp® is a low capacitance TVS array designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and transmission

Contextual Info: RClamp0554S RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS - RailClamp® Description Features A RailClamp® is a low capacitance TVS array designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and transmission

RClamp055

Abstract: diode code yw
Contextual Info: RClamp0554S RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS - RailClamp® Description Features A RailClamp® is a low capacitance TVS array designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and transmission

8Q DIODE

Abstract: U28 MARKING 8q diode sot23 u2.8 marking code YW DIODE
Contextual Info: SLVU2.8Q Low Voltage TVS Diode for Automotive Applications PROTECTION PRODUCTS Features Description ‹ 400 Watts peak pulse power tp = 8/20 s ‹ Transient protection for high speed data lines to The SLVU2.8Q transient voltage suppressor is rated to Grade 3 of AEC-Q100 for use in automotive applications. It is specifically designed to protect sensitive

Contextual Info: BZD17C SERIES Taiwan Semiconductor CREAT BY ART Voltage Regulator Diodes FEATURES - Silicon zener diodes - Low profile surface-mount package - Zener and surge current specification - Low leakage current - Excellent stability - Moisture sensitivity level: level 1, per J-STD-020

Contextual Info: RClamp0582B Low Capacitance TVS for ESD and Surge Protection PROTECTION PRODUCTS - RailClamp Description Features ‹ Transient protection for high-speed data lines to RailClamp® TVS diodes are specifically designed to protect sensitive components which are connected to

Contextual Info: RClamp2504P & RClamp3304P RailClamp 2.5V & 3.3V TVS Arrays PROTECTION PRODUCTS - RailClamp® Description Features ‹ Transient protection for high-speed data lines to RailClamp® is a low capacitance TVS array designed to protect high speed data interfaces. This series has been

KAE V9

Abstract: MMBD3004CQ-7-F MARKING yw SOT23
Contextual Info: MMBD3004A/C/S HIGH VOLTAGE SURFACE MOUNT DUAL SWITCHING DIODE Features Mechanical Data • • • • • • • • • Fast Switching Speed: Maximum of 50ns High Reverse Breakdown Voltage Rating: 350V Low Reverse Current: Maximum of 100nA when VR = 240V at

3.3V TVS

Abstract: 63E-12 3304p marking code YW DIODE ch1 0456 Clamp33
Contextual Info: RClamp2504P & RClamp3304P RailClamp 2.5V & 3.3V TVS Arrays PROTECTION PRODUCTS - RailClamp® Description Features ‹ Transient protection for high-speed data lines to RailClamp® is a low capacitance TVS array designed to protect high speed data interfaces. This series has been

SOT23 PAB

Contextual Info: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) max Features • • • • • • • • • ID TA = +25°C Package -430mA 0.9Ω @ VGS = -4.5V SOT23 -20V -150mA 2.0Ω @ VGS = -1.8V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

marking code YW DIODE

Abstract: IRF7606
Contextual Info: PD - 91264E IRF7606 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching S S S G A D 1 8 2 7 D 3 6 D 4 5 D VDSS = -30V RDS(on) = 0.09Ω

RCLAMP2504P

Abstract: RCLAMP3304P 3.3V TVS
Contextual Info: RClamp2504P & RClamp3304P RailClamp 2.5V & 3.3V TVS Arrays PROTECTION PRODUCTS - RailClamp® Description Features ‹ Transient protection for high-speed data lines to RailClamp® is a low capacitance TVS array designed to protect high speed data interfaces. This series has been

Contextual Info: MMBD3004A/C/S HIGH VOLTAGE SURFACE MOUNT DUAL SWITCHING DIODE Features Mechanical Data • Fast Switching Speed: Maximum of 50ns    High Reverse Breakdown Voltage Rating: 350V Low Reverse Current: Maximum of 100nA when VR = 240V at  Case: SOT23

DMP2004K-7

Contextual Info: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • • ID RDS(on) max TA = 25°C 0.9Ω @ VGS = -4.5V -430mA 2.0Ω @ VGS = -1.8V -150mA -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

1SMA4761 R2

Abstract: K13 diode
Contextual Info: 1SMA4737 thru 1SMA200Z Taiwan Semiconductor CREAT BY ART Surface Mount Silicon Zener Diodes FEATURES - Built-in strain relief - Ideal for automated placement - Glass passivated junction - Low inductance - Typical IR less than 1uA above 11V - Moisture sensitivity level : level 1, per J-STD-020