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    MARKING CODE VACC Search Results

    MARKING CODE VACC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5446/BEA
    		Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) PDF Buy
    5447/BEA
    		Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) PDF Buy
    54LS42/BEA
    		Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) PDF Buy
    54LS190/BEA
    		Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) PDF Buy
    TC4511BP
    		Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Datasheet

    MARKING CODE VACC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Product Brief – 121-Ball LPDDR2-PCM and LPDDR2 MCP Features Product Brief LPDDR2-PCM and Mobile LPDDR2 121-Ball MCP MT66R7072A10AB5ZZW.ZCA, MT66R7072A10ACUXZW.ZCA MT66R5072A10ACUXZW.ZFA Features Figure 1: MCP Block Diagram Micron LPDDR2-PCM and LPDDR2 components


    Original     		121-Ball MT66R7072A10AB5ZZW MT66R7072A10ACUXZW MT66R5072A10ACUXZW 16-bit 09005aef84e25954 121ball PDF

    capacitors MFP

    Abstract: 7NF15
    Contextual Info: Metallized Polypropylene Film Capacitors MFP B 32 632 Coated (Powder Dipped) … B 32 634 MFP pulse capacitors with highest possible contact reliability Crimped version Construction • Dielectric: polypropylene ■ Film metallized on one side and metal foils internally connected in series


    Original     		KMK0711-6 capacitors MFP 7NF15 PDF

    Marking code vacc

    Abstract: FPT-48P-M19 FPT-48P-M20
    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-3E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in


    Original     		DS05-20892-3E MBM29PDD322TE/BE 32M-bit, 48-pin 63-ball MBM29PDD322TE/BE F0206 Marking code vacc FPT-48P-M19 FPT-48P-M20 PDF

    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-3E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in


    Original     		DS05-20892-3E MBM29PDD322TE/BE 32M-bit, 48-pin 63-ball PDF

    20/MBM29F160TE/BE

    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE70/90 MBM29F160BE70/90 • DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be


    Original     		DS05-20879-4E MBM29F160TE70/90 MBM29F160BE70/90 MBM29F160TE/BE 16M-bit, 48-pin F0203 20/MBM29F160TE/BE PDF

    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-2E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in


    Original     		DS05-20892-2E MBM29PDD322TE/BE 32M-bit, 48-pin 63-ball F0203 PDF

    Contextual Info: MBM29DS163TE10 MBM29DS163BE10 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.


    Original     		MBM29DS163TE10 MBM29DS163BE10 F0303 PDF

    FPT-48P-M19

    Abstract: FPT-48P-M20
    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20891-4E FLASH MEMORY CMOS 16 M 2 M x 8/1 M × 16 BIT Dual Operation MBM29DS163TE/BE10 • DESCRIPTION The MBM29DS163TE/BE is 16 M-bit, 1.8 V-only Flash memory organized as 2 M bytes of 8 bits each or 1 M words of 16 bits each. The device is offered in 48-pin TSOP (1) and 48-ball FBGA packages. This device is


    Original     		DS05-20891-4E MBM29DS163TE/BE10 MBM29DS163TE/BE 48-pin 48-ball F0303 FPT-48P-M19 FPT-48P-M20 PDF

    Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,


    Original     		F0303 PDF

    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-1E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in


    Original     		DS05-20892-1E MBM29PDD322TE/BE 32M-bit, 48-pin 63-ball MBM29PDD322TE/BE PDF

    FPT-48P-M19

    Abstract: FPT-48P-M20
    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20891-3E FLASH MEMORY CMOS 16 M 2 M x 8/1 M × 16 BIT Dual Operation MBM29DS163TE/BE 10/12 • DESCRIPTION The MBM29DS163TE/BE is 16 M-bit, 1.8 V-only Flash memory organized as 2 M bytes of 8 bits each or 1 M words of 16 bits each. The device is offered in 48-pin TSOP (I) and 48-ball FBGA packages. This device is


    Original     		DS05-20891-3E MBM29DS163TE/BE 48-pin 48-ball MBM29DS163TE/BE FPT-48P-M19 FPT-48P-M20 PDF

    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20891-3E FLASH MEMORY CMOS 16 M 2 M x 8/1 M × 16 BIT Dual Operation MBM29DS163TE/BE 10/12 • DESCRIPTION The MBM29DS163TE/BE is 16 M-bit, 1.8 V-only Flash memory organized as 2 M bytes of 8 bits each or 1 M words of 16 bits each. The device is offered in 48-pin TSOP (I) and 48-ball FBGA packages. This device is


    Original     		DS05-20891-3E MBM29DS163TE/BE 48-pin 48-ball MBM29DS163TEthird F0203 PDF

    AAH17

    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20877-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 • FEATURES • Single 1.8 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands


    Original     		DS05-20877-1E MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 48-pin 48-ball AAH17 PDF

    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20877-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 • FEATURES • Single 1.8 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands


    Original     		DS05-20877-1E MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 48-pin 48-ball D-63303 F9910 PDF

    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-5E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE70/90 MBM29F160BE70/90 • DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be


    Original     		DS05-20879-5E MBM29F160TE70/90 MBM29F160BE70/90 MBM29F160TE/BE 16M-bit, 48-pin PDF

    MBM29F160BE90

    Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,


    Original     		F0207 MBM29F160BE90 PDF

    FPT-48P-M19

    Abstract: FPT-48P-M20
    Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,


    Original     		F0404 FPT-48P-M19 FPT-48P-M20 PDF

    FPT-48P-M19

    Abstract: FPT-48P-M20
    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-5E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE70/90 MBM29F160BE70/90 • DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be


    Original     		DS05-20879-5E MBM29F160TE70/90 MBM29F160BE70/90 MBM29F160TE/BE 16M-bit, 48-pin F0207 FPT-48P-M19 FPT-48P-M20 PDF

    FPT-48P-M19

    Abstract: FPT-48P-M20
    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE/BE-55/-70/-90 • GENERAL DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be


    Original     		DS05-20879-2E MBM29F160TE/BE-55/-70/-90 MBM29F160TE/BE 16M-bit, 48-pin FPT-48P-M19 FPT-48P-M20 PDF

    MBM29F160

    Abstract: FPT-48P-M19 FPT-48P-M20
    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE/BE-55/-70/-90 • GENERAL DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be


    Original     		DS05-20879-2E MBM29F160TE/BE-55/-70/-90 MBM29F160TE/BE 16M-bit, 48-pin MBM29F160 FPT-48P-M19 FPT-48P-M20 PDF

    MBM29F160BE90

    Contextual Info: MBM29F160TE70/90 MBM29F160BE70/90 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.


    Original     		MBM29F160TE70/90 MBM29F160BE70/90 F0207 MBM29F160BE90 PDF

    MBM29F160BE-90

    Abstract: MBM29F160BE90 FPT-48P-M19 FPT-48P-M20
    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-3E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE55/70/90 MBM29F160BE55/70/90 • DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be


    Original     		DS05-20879-3E MBM29F160TE55/70/90 MBM29F160BE55/70/90 MBM29F160TE/BE 16M-bit, 48-pin MBM29F160BE-90 MBM29F160BE90 FPT-48P-M19 FPT-48P-M20 PDF

    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE/BE-55/-70/-90 • FEATURES • 0.23µm Process Technology • Single 5.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands


    Original     		DS05-20879-1E MBM29F160TE/BE-55/-70/-90 48-pin D-63303 F9905 PDF

    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20882-5E FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29LV650UE90 MBM29LV651UE90 • DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and


    Original     		DS05-20882-5E MBM29LV650UE90 MBM29LV651UE90 MBM29LV650UE/651UE 64M-bit, F0303 PDF