MARKING CODE VA SOT Search Results

BC848F

Abstract: BC858F
Contextual Info: BC858F Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-30V • Complementary pair with BC848F Ordering Information Type NO. Marking BC858F Package Code SOT-23F VA

marking VA

Contextual Info: BC858F Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-30V • Complementary pair with BC848F Ordering Information Type NO. Marking BC858F Package Code SOT-23F VA

BC858

Abstract: Transistor BC848
Contextual Info: BC858 Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-30V • Complementary pair with BC848 Ordering Information Type NO. Marking BC858 Package Code SOT-23 VA : hFE rank

marking code VA

Abstract: kay 3000 S2 MARKING TRANSISTOR marking s1 2N7002V 2N7002V-7 2N7002VA MARKING SOT VA transistor marking code KAS transistor marking G1
Contextual Info: SPICE MODEL: 2N7002V/VA 2N7002V/VA NEW PRODUCT DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · Dual N-Channel MOSFET Low On-Resistance SOT-563 Low Gate Threshold Voltage A Low Input Capacitance Fast Switching Speed

Contextual Info: SPICE MODEL: 2N7002V/VA 2N7002V/VA NEW PRODUCT DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · Dual N-Channel MOSFET Low On-Resistance SOT-563 Low Gate Threshold Voltage A Low Input Capacitance Fast Switching Speed

Contextual Info: SPICE MODEL: 2N7002V/VA 2N7002V/VA Pb DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Lead-free Features • · · · · · · · · Dual N-Channel MOSFET Low On-Resistance SOT-563 Low Gate Threshold Voltage A Low Input Capacitance Fast Switching Speed

KAG TRANSISTOR

Abstract: DMN5L06V DMN5L06V-7 DMN5L06VA DMN5L06VA-7 g2 marking DIODE
Contextual Info: DMN5L06V/VA NEW PRODUCT Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · · Dual N-Channel MOSFET Low On-Resistance SOT-563 Very Low Gate Threshold Voltage A Low Input Capacitance Fast Switching Speed

F600M

Abstract: S08230 l32 sot23 hp 3080 diode MARK, g5 sot23
Contextual Info: ¥J>0%. HEWLETT ft "Em PACKARD Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodea Optimized fo r Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface M ount SOT-23

S2 MARKING TRANSISTOR

Abstract: marking code va transistors 2N7002V 2N7002V-7 2N7002VA sot-563 MOSFET D1 DIODES Inc date code marking marking code va sot
Contextual Info: 2N7002V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

transistor marking code G1

Abstract: MARKING CODE VA
Contextual Info: 2N7002V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage

Contextual Info: 2N7002V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage

Contextual Info: DATA SHEET MMBD914 SURFACE MOUNT SWITCHINGDIODE VOLTAGE 100 Volts POWER SOT-23 225 mWatts Unit：inch mm 0.006(0.15)MIN. FEATURES 0.120(3.04) • Very fast reverse recovery (Trr < 2.0 ns typical) 0.110(2.80) • Low capacitance (4pF @ 0V typical) • *UHHQPROGLQJFRPSRXQGDVSHU,(&6WG +DORJHQ)UHH

MARKING CODE 21S

Abstract: DIODE MARKING VA SOT-23
Contextual Info: DATA SHEET BAS21A/C/S SURFACE MOUNT, HIGH VOLTAGE, DUAL SWITCHING DIODES 250 Volts POWER 250mWatts SOT-23 Unit：inch mm • High reverse bearkdown voltage. 0.006(0.15)MIN. FEATURES 0.120(3.04) 0.110(2.80) • Fast switching speed. • Low reverse leakage current.

KAG TRANSISTOR

Abstract: KAH marking DMN5L06V DMN5L06V-7 DMN5L06VA DMN5L06VA-7 marking code va sot VA MARKING
Contextual Info: DMN5L06V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

marking s1

Abstract: 2N7002V 2N7002V-7 2N7002VA J-STD-020A
Contextual Info: 2N7002V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODEL: 2N7002V/VA Features • · · · · · · · Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

marking code va transistors

Abstract: Marking G2 marking code TC 2N7002V-7 2N7002VA J-STD-020A 2N7002V transistor marking G1
Contextual Info: 2N7002V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODEL: 2N7002V/VA Features • · · · · · · · Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

diodes code va

Abstract: VA MARKING
Contextual Info: Not Recommended for New Design, Use 2N7002VC/VAC 2N7002V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage

wA MARKING SOT-23 SERIES DIODE

Abstract: DIODE MARKING VA SOT-23
Contextual Info: BAS116/BAW156/BAV170/BAV199 SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES 100 Volts POWER SOT-23 250mWatts Unit：inch mm • Suface mount package ideally suited for automatic insertion. • Very low leakage current. 2pA typical at VR=75V. • Low capacitance. 2pF max at VR=0V, f=1MHz

Contextual Info: DATA SHEET MMBD914 SURFACE MOUNT SWITCHINGDIODE 100 Volts POWER SOT-23 225 mWatts Unit：inch mm • Very fast reverse recovery (Trr < 2.0 n s typical) 0.006(0.15)MIN. FEATURES 0.120(3.04) 0.110(2.80) • Low capacitance (4pF @ 0V typical) • Surface mount package ideally suited for automatic insertion

Contextual Info: MMBD7000 SURFACE MOUNT SWITCHING DIODE VOLTAGE 100 Volts POWER 225 mWatts SOT-23 Unit：inch mm FEATURES • Very fast reverse recovery (t rr < 2.0 ns typical) 0.120(3.04) 0.110(2.80) • Isolated, series-connected diode pair • Surface mount package ideally suited for automatic insertion

Contextual Info: DATA SHEET BAS21A/C/S SURFACE MOUNT, HIGH VOLTAGE, DUAL SWITCHING DIODES VOLTAGE 250 Volts POWER 250mWatts SOT-23 Unit：inch mm FEATURES • High reverse bearkdown voltage. 0.120(3.04) • Fast switching speed. 0.110(2.80) • Low reverse leakage current.

Contextual Info: DATA SHEET BAS21A/C/S SURFACE MOUNT, HIGH VOLTAGE, DUAL SWITCHING DIODES VOLTAGE 250 Volts POWER 250mWatts SOT-23 Unit：inch mm FEATURES • High reverse bearkdown voltage. 0.120(3.04) • Fast switching speed. 0.110(2.80) • Low reverse leakage current.

Contextual Info: DATA SHEET MMBD914 SURFACE MOUNT SWITCHINGDIODE 100 Volts POWER 225 mWatts SOT-23 Unit：inch mm • Very fast reverse recovery (Trr < 2.0 n s typical) 0.006(0.15)MIN. FEATURES 0.120(3.04) 0.110(2.80) • Low capacitance (4pF @ 0V typical) • Surface mount package ideally suited for automatic insertion

Contextual Info: PJRB461F SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 25 Volts CURRENT 700 mA SOT-323 Unit：inch mm • IF guaranteed at 0.7A • Ultra-Low V F (0.28V typical @100mA,75 OC) 0.087(2.20) 0.070(1.80) • Extremely fast switching speed 0.087(2.20) 0.078(2.00) 0.004(0.10)MIN.