MARKING CODE UJ Search Results

BY228ph

Abstract: BYV26E PH 1N5062 ph BY228 PH 1N4007 sod87 za109ts BYW95C PH BYR245 sj 1a0 SOD87 1N4007
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Power Diodes Supersedes data of 2004 Apr 27 2004 Jun 11 Philips Semiconductors Product specification Power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE PACKAGE TYPE NUMBER MARKING CODE PACKAGE

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

V170R

Abstract: SO7K40 so7k SO7K250 sanken snr ERZC07DK330 varistor 420 s 14k sanken varistor SNR varistor 7k 270 ZOV Varistor
Contextual Info: VARISTORS /> S C 32 i< !K <o Style Designation: (typical Standard Marking: R6921ZOV511RA110 Where: RCoating identification, R means standard flame-retardant fluid bed epoxy. 69 Size code, 2 numbers. See Dimensions Table. 21 Lead Configuration code, 1 or 2 numbers used only for non­

Contextual Info: SIEMENS BCR 146W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=47k£2, R2=22k£2 FL U TT Pin Configuration Ordering Code WLs UPON INQUIRY Package UJ II CM Marking BCR 146W

SOT23 KJA

Contextual Info: SIEMENS BCR 135 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=2.2kiî, R2=47kft Marking Ordering Code Pin Configuration BCR 135 WJs 1 =B Package UJ II CNJ Q62702-C2257 CO II O Type

Contextual Info: SIEMENS BCR 196 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=47k£2, R2=22kfl Marking Ordering Code Pin Configuration BCR 196 WXs 1 =B Package UJ II <M UPON INQUIRY o II CO Type

Contextual Info: SIEMENS SMBTA 06M NPN Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 56M PNP it UJ CO il Q62702-A3473 O s1G CM SMBTA 06M II Marking Ordering Code Pin Configuration CÛ Type Package

Contextual Info: NPN Silicon Switching Transistors • • • BSS 79 BSS 81 High DC current gain Low collector-emitter saturation voltage Complementary types: B S S 80, B S S 82 PNP Type BSS BSS BSS BSS 79 79 81 81 B C B C Marking Ordering code for versions in bulk Ordering code for

bft93

Abstract: transistor BF 199
Contextual Info: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

BC 170 transistor

Contextual Info: SIEMENS BC 817-16W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emltter saturation voltage • Complementary types: BC807W, BC808W PNP Type Marking Ordering Code Pin Configuration

BF 182 transistor

Abstract: transistor 182 marking code M21
Contextual Info: SIEMENS BFP 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2cfB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

7826 Transistor

Abstract: marking code Sk transistors
Contextual Info: 2SD2114K Transistor, NPN Features dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD2114K; BB-*, where ★ is hFE code • high DC current amplification, typically hFE = 1200 • high emitter-base voltage, VEBO = 12V(min)

2SC4132

Abstract: T100 sc-62 package oc sc62
Contextual Info: 2SC4132 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SOT-89, SC-62) package package marking: 2SC4132; CB-A-, where ★ is hFE code high breakdown voltage BVqeo = 120 V high transition frequency (fT) low output capacitance (Cob)

AX057

Abstract: marking code 9d D1NL4 DATE CODE FOR NITM MU diode MARKING CODE l4 marking code diode
Contextual Info: Super Fast Recovery Diode Axial Diode Wtm D1 NL40 OUTLINE U nit-m m Package : AX057 W eight 0.19g Typ 400V 0.9A UJ Feature •ms'ix • Low Noise • trr= 5 0 n s • trr=50ns 02.6 -M - 0> Main Use • Switching Regulator • ÍM .0AJM 3 Marking Spec Code

Contextual Info: SIEMENS BCR 191 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit »Built in bias resistor R1=22kiî, Rg=22ki2 Type Marking Ordering Code Pin Configuration BCR 191 WOs 1=B Q62702-C2264 Package 2=E 3=C SOT-23

transistor d2118

Contextual Info: 2SD2118F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D2118*Q , where ★ is hFE code and □ is lot number • excellent current-to-gain characteristics • 2SD2118F5 (CPT F5) 6.5 ± 0.2 2.3

KC-79-35

Contextual Info: DASH NO. M CODE MADE FROM NOTES: 1. SAME AS UG-1094/U EXCEPT FOR FINISH & MARKING. 2. MATERIALS: INSULATOR: TEFLON, ASTM-D-4894 LOCKWASHER: PHOSPHOR BRONZE. ASTM-B103 CENTER CONTACT: BER. COPPER, ASTM-B-196 ALL OTHER METAL PARTS: BRASS, ASTM-B16 3. FINISHES:

Contextual Info: SIEMENS BFP183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F= 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

131 Transistor

Abstract: TRANSISTOR 2SC 2SC4649 2SC2059K 2SC4099 SC-75 T106 T146 transistor 3bt marking 1F SMT3
Contextual Info: 2SC2059K 2SC4099 2SC4649 Transistor, NPN Features • available In SMT3 SMT, SC-59 , UMT3 (UMT, SC-70), and EMT3 (EMT, SC-75) packages • package marking: 2SC2059K, 2SC4099,2SC4649; J-*, where ★ is hFE code • high transition frequency, typically fT = 500 MHz at 1 mA

K 4005 transistor

Abstract: ic MARKING FZ 2SC4505 T100 T200 2SC4505CE
Contextual Info: 2SC4505 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT3, SOT-89, SC-62) package • package marking: 2SC4505; CE-*, where ★ is hFE code • high voltage BVCEO = 400 V • low collector saturation voltage, typically VCE(sat) = 0.05 V for

Contextual Info: SIEM ENS BDP 952 PNP Silicon AF Power Transistor • For A F drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration BDP 952 BDP 952 Q62702-D1340 1 =B

Contextual Info: BCE Sud Passive Components Product specification Supersedes data of 04 November 2002 2003 April 18 BCE Sud Passive Components A former part of Philips Components BCE Sud Passive Components 2003 April 18 BCE Sud Passive Components The temperature coefficient is indicated by a marking code

2SA amplifier

Abstract: H1000I 2SA1514K 2SA1579 2SC3906K 2SC4102 transistor 2SA transistor PNP
Contextual Info: 2SA1514K 2SA1579 Transistor, PNP Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1514K and 2SA1579; R-*, where ★ is hFE code • • high breakdown voltage: V qeo = -120 V complementary pair with 2SC3906K