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    MARKING CODE TSM2311CX SOT23 Search Results

    MARKING CODE TSM2311CX SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5446/BEA
    		Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) PDF Buy
    54LS190/BEA
    		Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) PDF Buy
    MG80C186-10/BZA
    		Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) PDF Buy
    ICM7555MTV/883
    		Rochester Electronics LLC ICM7555MTV/883 - Dual marked (5962-8950303GA) PDF Buy
    MQ80C186-10/BYA
    		Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) PDF Buy

    MARKING CODE TSM2311CX SOT23 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MOSFET P-Channel sot-23

    Abstract: TSM2311CX A1 SOT-23 MOSFET P-CHANNEL
    Contextual Info: TSM2311 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -20 Features ID (A) 55 @ VGS = -4.5V -4.0 85 @ VGS = -2.5V -2.5 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		TSM2311 OT-23 TSM2311CX OT-23 MOSFET P-Channel sot-23 A1 SOT-23 MOSFET P-CHANNEL PDF

    TSM2311

    Abstract: TSM2311CX marking code TSM2311CX SOT23 p-channel SOT-23 20V
    Contextual Info: TSM2311 20V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain -20 Features ID (A) 55 @ VGS = -4.5V -4.0 85 @ VGS = -2.5V -2.5 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		TSM2311 OT-23 TSM2311CX TSM2311 marking code TSM2311CX SOT23 p-channel SOT-23 20V PDF