Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MARKING CODE SUS 15 Search Results

    MARKING CODE SUS 15 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5446/BEA
    Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) PDF Buy
    54LS190/BEA
    Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) PDF Buy
    MG80C186-10/BZA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) PDF Buy
    ICM7555MTV/883
    Rochester Electronics LLC ICM7555MTV/883 - Dual marked (5962-8950303GA) PDF Buy
    MQ80C186-10/BYA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) PDF Buy

    MARKING CODE SUS 15 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: STD13003D Semiconductor NPN Silicon Power Transistor Features • High speed switching • VCEO sus =400V • Suitable for Switching Regulator and Motor Control Ordering Information Type NO. Marking Package Code STD13003D STD13003 D-PAK PIN Connections 4 3


    Original
    STD13003D STD13003 KSD-T6O006-000 PDF

    2N6488G

    Abstract: 2N6487G AYWW marking code IC complementary npn-pnp 2N6491 power circuit marking code SUs 15 pnp power 1N5825 2N6487 2N6488
    Contextual Info: 2N6487, 2N6488, NPN 2N6490, 2N6491 (PNP) 2N6488 and 2N6491 are Preferred Devices Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. http://onsemi.com Features 15 AMPERE


    Original
    2N6487, 2N6488, 2N6490, 2N6491 2N6488 2N6491 2N6490 2N6488G 2N6487G AYWW marking code IC complementary npn-pnp 2N6491 power circuit marking code SUs 15 pnp power 1N5825 2N6487 PDF

    s2000n transistor

    Abstract: S2000N S2000N equivalent 2-16E3A package transistor s2000n 2-16E3A Toshiba S20
    Contextual Info: S2000N TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE S2000N COLOR TV HORIZONTAL OUTPUT APPLICATIONS COLOR TV SWITCHING REGULATOR APPLICATIONS High Voltage Unit: mm : VCES = 1500 V High Speed : tf = 0.7µs Max. Low Saturation Voltage : VCE (sat) = 5 V (Max.)


    Original
    S2000N s2000n transistor S2000N S2000N equivalent 2-16E3A package transistor s2000n 2-16E3A Toshiba S20 PDF

    Full-bridge forward inverter

    Abstract: 40N20
    Contextual Info: 19-3177; Rev 1; 4/06 KIT ATION EVALU E L B A AVAIL High-Efficiency CCFL Backlight Controller with SMBus Interface The MAX8709B integrated backlight controller is optimized to drive cold-cathode fluorescent lamps CCFLs using a resonant full-bridge inverter architecture.


    Original
    200Hz 220Hz MAX8709B MAX8709B Full-bridge forward inverter 40N20 PDF

    IC 4047

    Abstract: ic 4047 datasheet IC 4047 BE 4047 BE data sheet of IC 4047 transistor 3504 npn CYStech Electronics IC dc 4047 marking E3 amplifier TIP41C
    Contextual Info: Spec. No. : C611E3 Issued Date : 2004.07.14 CYStech Electronics Corp. Revised Date : Page No. : 1/3 6A NPN Epitaxial Planar Power Transistor TIP41CE3 Description TIP41CE3 is designed for use in general purpose amplifier and switching applications. Features


    Original
    C611E3 TIP41CE3 TIP41CE3 500mA O-220AB UL94V-0 IC 4047 ic 4047 datasheet IC 4047 BE 4047 BE data sheet of IC 4047 transistor 3504 npn CYStech Electronics IC dc 4047 marking E3 amplifier TIP41C PDF

    CCFL BACKLIGHT INVERTER RoHS

    Abstract: ccfl BACKLIGHT LAMP sumida backlight inverter 12 tvs MARKING CODE LAYOUT SOT23 C3225X7R1E475M MAX8709 MAX8709A MAX8709AETI MAX8709ETI lcd inverter ccfl transformer
    Contextual Info: 19-3177; Rev 1; 3/05 KIT ATION EVALU E L B A AVAIL High-Efficiency CCFL Backlight Controller with SMBus Interface The MAX8709/MAX8709A integrated backlight controller are optimized to drive cold-cathode fluorescent lamps CCFLs using a resonant full-bridge inverter architecture.


    Original
    MAX8709/MAX8709A CCFL BACKLIGHT INVERTER RoHS ccfl BACKLIGHT LAMP sumida backlight inverter 12 tvs MARKING CODE LAYOUT SOT23 C3225X7R1E475M MAX8709 MAX8709A MAX8709AETI MAX8709ETI lcd inverter ccfl transformer PDF

    transistor BD 736

    Abstract: TRANSISTOR bd 737
    Contextual Info: MMJT350T1 Bipolar Power Transistors PNP Silicon . . . designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. • High Collector−Emitter Sustaining Voltage − VCEO sus =300 Vdc @ IC


    Original
    MMJT350T1 OT-223 transistor BD 736 TRANSISTOR bd 737 PDF

    resistor 56E

    Abstract: MARKING TRANSISTOR BD RC MAX3453E MAX3453EETE MAX3453EEUD MAX3454EETE MAX3454EEUD MAX3455EEUD MAX3456E MAX3453E-56E
    Contextual Info: 19-2924; Rev 3; 10/05 ±15kV ESD-Protected USB Transceivers The MAX3453EMAX3456E ±15kV ESD-protected USBcompliant transceivers interface low-voltage ASICs with USB devices. The devices fully comply with USB 1.1 and USB 2.0 when operating at full 12Mbps and low


    Original
    MAX3453E MAX3456E 12Mbps) MAX3456E MAX3453E/MAX3454E resistor 56E MARKING TRANSISTOR BD RC MAX3453EETE MAX3453EEUD MAX3454EETE MAX3454EEUD MAX3455EEUD MAX3453E-56E PDF

    Contextual Info: SMCJ5.0A-TR,CA-TR SMCJ188A-TR,CA-TR TRANSIL FEATURES • PEAK PULSE POWER : 1500 W 10/1 OOO^s ■ STAND OFF VOLTAGE RANGE : From 5V to 188V. ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR ■ FAST RESPONSE TIME DESCRIPTION The SMCJ series are TRANSIL™ diodes designed


    OCR Scan
    SMCJ188A-TR PDF

    Contextual Info: 19-3801; Rev 1; 11/05 ±15kV ESD-Protected USB Transceivers with External/Internal Pullup Resistors Features The MAX13481E/MAX13482E/MAX13483E ±15kV ESDprotected USB-compliant transceivers interface lowvoltage ASICs with USB devices. The transceivers fully


    Original
    MAX13481E/MAX13482E/MAX13483E 12Mbps) MAX13482E) MAX13481E) MAX13482E/MAX13483E) PDF

    W25Q32BVSSIG

    Contextual Info: W25Q32BV 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: November 5, 2009 Revision D W25Q32BV Table of Contents 1. GENERAL DESCRIPTION . 5


    Original
    W25Q32BV 32M-BIT 208-MIL 300ted W25Q32BVSSIG PDF

    WINBOND 25Q80BVSIG

    Contextual Info: W25Q80BV 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: August 20, 2009 Preliminary - Revision B W25Q80BV Table of Contents 1. GENERAL DESCRIPTION . 5


    Original
    W25Q80BV 208-MIL WINBOND 25Q80BVSIG PDF

    MJE15034

    Abstract: mje1503x mje15035
    Contextual Info: MJE15034 NPN, MJE15035 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO−220, NPN & PNP Devices http://onsemi.com . . . designed for use as high−frequency drivers in audio amplifiers. • hFE = 100 Min @ IC = 0.5 Adc • • •


    Original
    MJE15034 MJE15035 O-220, MJE15034, O-220AB Emitter-Ba25 MJE15034 MJE15035 mje1503x PDF

    Contextual Info: W25Q40BW 1.8V 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: October 11, 2013 Revision F W25Q40BW Table of Contents 1. GENERAL DESCRIPTION . 5


    Original
    W25Q40BW 150-MIL 150-MIL PDF

    SMD MARKING CODE 1C

    Abstract: 7272B SA-7272B SMD MARKING CODE 901 7273B SA-7010 smd marking AB 6 PIN 7150A SA-7010TA SMD CODE SA
    Contextual Info: COPAL ELECTRONICS ROTARY CODED SWITCHES SMD RoHS compatible SA-7000 INTERNAL STRUCTURE 4 1 2 3 7 8 9 Part name • FEATURES ● Lead-free soldering ● Low profile of 3.0 mm ● Wide variety (top or side setting, 10 or 16 positions, J-hook, gull wing or through hole pins) to choose from


    Original
    SA-7000 UL-94HB UL-94V-0 SA-72TB SA-73TB SA-7012B) SMD MARKING CODE 1C 7272B SA-7272B SMD MARKING CODE 901 7273B SA-7010 smd marking AB 6 PIN 7150A SA-7010TA SMD CODE SA PDF

    bd 743 transistor

    Abstract: 9410A bd 743
    Contextual Info: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon • Collector −Emitter Sustaining Voltage − VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain − http://onsemi.com hFE • • • • = 85 (Min) @ IC = 0.8 Adc = 60 (Min) @ IC = 3.0 Adc


    Original
    MMJT9410 OT-223 bd 743 transistor 9410A bd 743 PDF

    tip137

    Abstract: tip13 TIP13x tip131
    Contextual Info: TIP131, TIP132 NPN , TIP137 (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. http://onsemi.com Features DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLTS, 70 WATTS


    Original
    TIP131, TIP132 TIP137 TIP131 TIP132, TIP137 O-220AB TIP131/D tip13 TIP13x tip131 PDF

    TE28F160C3BD

    Abstract: unlock 28F160C3 28F320C3 28F640C3 28F800C3 TE28F320C3BC te28f320c3bd70 te28f160c3td70 gt28f320c3ba110
    Contextual Info: Intel£ Advanced+ Boot Block Flash Memory C3 28F800C3, 28F160C3, 28F320C3, 28F640C3 (x16) Datasheet Product Features • ■ ■ ■ ■ ■ ■ Flexible SmartVoltage Technology — 2.7 V– 3.6 V Read/Program/Erase — 12 V for Fast Production Programming


    Original
    28F800C3, 28F160C3, 28F320C3, 28F640C3 LF160C3TC70 GE28F160C3BC70 GE28F160C3TC80 GE28F160C3BC80 GE28F160C3TC90 GE28F160C3BC90 TE28F160C3BD unlock 28F160C3 28F320C3 28F640C3 28F800C3 TE28F320C3BC te28f320c3bd70 te28f160c3td70 gt28f320c3ba110 PDF

    MJE15035G

    Abstract: MJE15034G MJE15034 mje15
    Contextual Info: MJE15034 NPN, MJE15035 PNP Complementary Silicon Plastic Power Transistors TO−220, NPN & PNP Devices http://onsemi.com Complementary silicon plastic power transistors are designed for use as high−frequency drivers in audio amplifiers. Features • hFE = 100 Min @ IC = 0.5 Adc


    Original
    MJE15034 MJE15035 O-220, MJE15034, O-220AB MJE15034/D MJE15035G MJE15034G mje15 PDF

    Contextual Info: W25Q16DV 3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI For Automotive & Industrial Plus Grades -1- Publication Release Date: January 13, 2014 Preliminary - Revision A W25Q16DV Table of Contents 1. 2. 3. 4. 5. 6. GENERAL DESCRIPTION . 5


    Original
    W25Q16DV 16M-BIT 208-mil PDF

    Contextual Info: MMJT350T1 Bipolar Power Transistors PNP Silicon Bipolar power transistorsĂare designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability. Features http://onsemi.com 0.5 AMPERE


    Original
    MMJT350T1 OT-223 MMJT350T1/D PDF

    25Q16DVSIG

    Abstract: 25Q16DVS W25Q16DV W25Q16DVS W25Q16DVSNIG W25Q16DVSFIG W25Q16DVSSIG Winbond 25Q16dVSIG 25q16dvnig PDIP8
    Contextual Info: W25Q16DV 3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: October 29, 2012 Revision D W25Q16DV Table of Contents 1. GENERAL DESCRIPTION . 5


    Original
    W25Q16DV 16M-BIT 208-mil 25Q16DVSIG 25Q16DVS W25Q16DV W25Q16DVS W25Q16DVSNIG W25Q16DVSFIG W25Q16DVSSIG Winbond 25Q16dVSIG 25q16dvnig PDIP8 PDF

    W25Q16CV

    Abstract: 25Q16CVSIG W25Q16CVZPIG w25q16c W25Q16CVZPAG tv1 0406 1000FFH W25Q16CVSSIG
    Contextual Info: W25Q16CV 3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: April 01, 2011 Revision C W25Q16CV Table of Contents 1. GENERAL DESCRIPTION . 5


    Original
    W25Q16CV 16M-BIT 208-mil W25Q16CV 25Q16CVSIG W25Q16CVZPIG w25q16c W25Q16CVZPAG tv1 0406 1000FFH W25Q16CVSSIG PDF

    HBD437D

    Abstract: DSA0026081
    Contextual Info: HI-SINCERITY Spec. No. : HD200201 Issued Date : 2001.04.01 Revised Date : 2005.08.16 Page No. : 1/4 MICROELECTRONICS CORP. HBD437D COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD437D is silison epitaxial-base NPN power transistor in TO-126ML plastic


    Original
    HD200201 HBD437D HBD437D O-126ML HBD438D. O-126ML Collecto60 183oC 217oC 260oC DSA0026081 PDF