MARKING CODE SUS 15 Search Results

Contextual Info: STD13003D Semiconductor NPN Silicon Power Transistor Features • High speed switching • VCEO sus =400V • Suitable for Switching Regulator and Motor Control Ordering Information Type NO. Marking Package Code STD13003D STD13003 D-PAK PIN Connections 4 3

2N6488G

Abstract: 2N6487G AYWW marking code IC complementary npn-pnp 2N6491 power circuit marking code SUs 15 pnp power 1N5825 2N6487 2N6488
Contextual Info: 2N6487, 2N6488, NPN 2N6490, 2N6491 (PNP) 2N6488 and 2N6491 are Preferred Devices Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. http://onsemi.com Features 15 AMPERE

s2000n transistor

Abstract: S2000N S2000N equivalent 2-16E3A package transistor s2000n 2-16E3A Toshiba S20
Contextual Info: S2000N TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE S2000N COLOR TV HORIZONTAL OUTPUT APPLICATIONS COLOR TV SWITCHING REGULATOR APPLICATIONS High Voltage Unit: mm : VCES = 1500 V High Speed : tf = 0.7µs Max. Low Saturation Voltage : VCE (sat) = 5 V (Max.)

Full-bridge forward inverter

Abstract: 40N20
Contextual Info: 19-3177; Rev 1; 4/06 KIT ATION EVALU E L B A AVAIL High-Efficiency CCFL Backlight Controller with SMBus Interface The MAX8709B integrated backlight controller is optimized to drive cold-cathode fluorescent lamps CCFLs using a resonant full-bridge inverter architecture.

IC 4047

Abstract: ic 4047 datasheet IC 4047 BE 4047 BE data sheet of IC 4047 transistor 3504 npn CYStech Electronics IC dc 4047 marking E3 amplifier TIP41C
Contextual Info: Spec. No. : C611E3 Issued Date : 2004.07.14 CYStech Electronics Corp. Revised Date : Page No. : 1/3 6A NPN Epitaxial Planar Power Transistor TIP41CE3 Description TIP41CE3 is designed for use in general purpose amplifier and switching applications. Features

CCFL BACKLIGHT INVERTER RoHS

Abstract: ccfl BACKLIGHT LAMP sumida backlight inverter 12 tvs MARKING CODE LAYOUT SOT23 C3225X7R1E475M MAX8709 MAX8709A MAX8709AETI MAX8709ETI lcd inverter ccfl transformer
Contextual Info: 19-3177; Rev 1; 3/05 KIT ATION EVALU E L B A AVAIL High-Efficiency CCFL Backlight Controller with SMBus Interface The MAX8709/MAX8709A integrated backlight controller are optimized to drive cold-cathode fluorescent lamps CCFLs using a resonant full-bridge inverter architecture.

transistor BD 736

Abstract: TRANSISTOR bd 737
Contextual Info: MMJT350T1 Bipolar Power Transistors PNP Silicon . . . designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. • High Collector−Emitter Sustaining Voltage − VCEO sus =300 Vdc @ IC

resistor 56E

Abstract: MARKING TRANSISTOR BD RC MAX3453E MAX3453EETE MAX3453EEUD MAX3454EETE MAX3454EEUD MAX3455EEUD MAX3456E MAX3453E-56E
Contextual Info: 19-2924; Rev 3; 10/05 ±15kV ESD-Protected USB Transceivers The MAX3453E–MAX3456E ±15kV ESD-protected USBcompliant transceivers interface low-voltage ASICs with USB devices. The devices fully comply with USB 1.1 and USB 2.0 when operating at full 12Mbps and low

Contextual Info: SMCJ5.0A-TR,CA-TR SMCJ188A-TR,CA-TR TRANSIL FEATURES • PEAK PULSE POWER : 1500 W 10/1 OOO^s ■ STAND OFF VOLTAGE RANGE : From 5V to 188V. ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR ■ FAST RESPONSE TIME DESCRIPTION The SMCJ series are TRANSIL™ diodes designed

Contextual Info: 19-3801; Rev 1; 11/05 ±15kV ESD-Protected USB Transceivers with External/Internal Pullup Resistors Features The MAX13481E/MAX13482E/MAX13483E ±15kV ESDprotected USB-compliant transceivers interface lowvoltage ASICs with USB devices. The transceivers fully

W25Q32BVSSIG

Contextual Info: W25Q32BV 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: November 5, 2009 Revision D W25Q32BV Table of Contents 1. GENERAL DESCRIPTION . 5

WINBOND 25Q80BVSIG

Contextual Info: W25Q80BV 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: August 20, 2009 Preliminary - Revision B W25Q80BV Table of Contents 1. GENERAL DESCRIPTION . 5

MJE15034

Abstract: mje1503x mje15035
Contextual Info: MJE15034 NPN, MJE15035 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO−220, NPN & PNP Devices http://onsemi.com . . . designed for use as high−frequency drivers in audio amplifiers. • hFE = 100 Min @ IC = 0.5 Adc • • •

Contextual Info: W25Q40BW 1.8V 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: October 11, 2013 Revision F W25Q40BW Table of Contents 1. GENERAL DESCRIPTION . 5

SMD MARKING CODE 1C

Abstract: 7272B SA-7272B SMD MARKING CODE 901 7273B SA-7010 smd marking AB 6 PIN 7150A SA-7010TA SMD CODE SA
Contextual Info: COPAL ELECTRONICS ROTARY CODED SWITCHES SMD RoHS compatible SA-7000 INTERNAL STRUCTURE 4 1 2 3 7 8 9 Part name • FEATURES ● Lead-free soldering ● Low profile of 3.0 mm ● Wide variety (top or side setting, 10 or 16 positions, J-hook, gull wing or through hole pins) to choose from

bd 743 transistor

Abstract: 9410A bd 743
Contextual Info: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon • Collector −Emitter Sustaining Voltage − VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain − http://onsemi.com hFE • • • • = 85 (Min) @ IC = 0.8 Adc = 60 (Min) @ IC = 3.0 Adc

tip137

Abstract: tip13 TIP13x tip131
Contextual Info: TIP131, TIP132 NPN , TIP137 (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. http://onsemi.com Features DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLTS, 70 WATTS

TE28F160C3BD

Abstract: unlock 28F160C3 28F320C3 28F640C3 28F800C3 TE28F320C3BC te28f320c3bd70 te28f160c3td70 gt28f320c3ba110
Contextual Info: Intel£ Advanced+ Boot Block Flash Memory C3 28F800C3, 28F160C3, 28F320C3, 28F640C3 (x16) Datasheet Product Features • ■ ■ ■ ■ ■ ■ Flexible SmartVoltage Technology — 2.7 V– 3.6 V Read/Program/Erase — 12 V for Fast Production Programming

MJE15035G

Abstract: MJE15034G MJE15034 mje15
Contextual Info: MJE15034 NPN, MJE15035 PNP Complementary Silicon Plastic Power Transistors TO−220, NPN & PNP Devices http://onsemi.com Complementary silicon plastic power transistors are designed for use as high−frequency drivers in audio amplifiers. Features • hFE = 100 Min @ IC = 0.5 Adc

Contextual Info: W25Q16DV 3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI For Automotive & Industrial Plus Grades -1- Publication Release Date: January 13, 2014 Preliminary - Revision A W25Q16DV Table of Contents 1. 2. 3. 4. 5. 6. GENERAL DESCRIPTION . 5

Contextual Info: MMJT350T1 Bipolar Power Transistors PNP Silicon Bipolar power transistorsĂare designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability. Features http://onsemi.com 0.5 AMPERE

25Q16DVSIG

Abstract: 25Q16DVS W25Q16DV W25Q16DVS W25Q16DVSNIG W25Q16DVSFIG W25Q16DVSSIG Winbond 25Q16dVSIG 25q16dvnig PDIP8
Contextual Info: W25Q16DV 3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: October 29, 2012 Revision D W25Q16DV Table of Contents 1. GENERAL DESCRIPTION . 5

W25Q16CV

Abstract: 25Q16CVSIG W25Q16CVZPIG w25q16c W25Q16CVZPAG tv1 0406 1000FFH W25Q16CVSSIG
Contextual Info: W25Q16CV 3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: April 01, 2011 Revision C W25Q16CV Table of Contents 1. GENERAL DESCRIPTION . 5

HBD437D

Abstract: DSA0026081
Contextual Info: HI-SINCERITY Spec. No. : HD200201 Issued Date : 2001.04.01 Revised Date : 2005.08.16 Page No. : 1/4 MICROELECTRONICS CORP. HBD437D COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD437D is silison epitaxial-base NPN power transistor in TO-126ML plastic