MARKING CODE SS14 Search Results

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

s149

Abstract: transistor Siemens 14 S S 92
Contextual Info: SIEMENS SIPMOS Small-Signal Transistor • • • • • • • B SS 149 Vos 200 V ID 0.35 A ^DS on 3.5 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code Tape and Reel Inform ation PinC onfigu ration Marking

8065S

Contextual Info: SIPMOS Small-Signal Transistor • • • • • • • BSS 149 Vx 200 V /D 0.35 A ^DS on 3-5 N channel Depletion mode High dynamic resistance Available grouped in Vqs^ Type Ordering Code BSS 149 Q67000-S252 Tape and Reel information Pin Gonfigu ration Marking Package

bss149

Contextual Info: BSS 149 I nf ine on technologies SIPMOS Small-Signal Transistor • • • • • • • VDS 200 V 0.35 A ^DS on 3.5 Cl N channel Depletion mode High dynamic resistance Available grouped in VQSOh) ID Type Ordering Code Tape and Reel Information Pin C onfigu ration Marking

ss149

Abstract: transistor s623 Q62702-S623 Q67000-S252
Contextual Info: BSS 149 SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● VDS 200 V ID 0.35 A RDS on 3.5 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code 2 1 2 3 3 1 Tape and Reel Information Pin Configuration Marking Package

Contextual Info: Surface Mount Schottky Diodes Operating Temperature: -65o C to 150°C VF V Max. Part No. Device Marking Code Pd (mW) PIV (V) Min. IR (µA) Max. @ 0.1 mA @ 1.0 mA @ 2.0 mA @ 10 mA @ 15 mA @ 20 mA @ 30 mA @ @ 40/50 100/200 mA mA @ 250 mA TR R (nS) Max. Outline

bss 108

Abstract: BSS 97 Q67000-S252 SS149 TRANSISTOR 149
Contextual Info: SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● BSS 149 VDS 200 V ID 0.35 A RDS on 3.5 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code BSS 149 Q67000-S252 1 Tape and Reel Information 2 3 Pin Configuration Marking Package

SS14L

Abstract: SS12L SS13L
Contextual Info: Preliminary SS12L THRU SS14L 1.0 AMP. Surface Mount Schottky Barrier Rectifiers Voltage Range 20 to 40 Volts Current 1.0 Ampere Sub SMA Features — — — — — For surface mounted application Low –PROFILE PACKAGE Ideal for automated placement Low power loss, high efficiency

Contextual Info: SS12L-SS14L 1A Surface-mount Schottky Rectifier Voltage Range 20 to 40 Volts FEATURES Sub-SMA For surface-mount applications Low-profile package Ideal for automated placement Low power loss, high efficiency High-temperature soldering: 260°C / 10 seconds at terminals

SS14 DIODE schottky

Abstract: ss14 diode specifications DIODE marking code SS14 diode marking ss14 ss14 diode ss14 sma ss12 DIODE marking PK sma
Contextual Info: SS12, SS14 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

SS14 DIODE schottky

Abstract: diode marking ss14 SS14 DIODE DC SS14 diode SS14 application notes DIODE ss14 SMA CASE 403D-02 footprint DIODE marking code SS14 diode SS12 sma Theta-JC, 403D-02
Contextual Info: SS12, SS14 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

ss14 diode

Abstract: SS14 application notes SS14 DIODE schottky ss14 SS1x SS14 DC ss12
Contextual Info: SS12, SS14 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

SS14 DIODE

Abstract: SS14
Contextual Info: SS12, SS13, SS14, SS15, SS16 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency

Contextual Info: SS13M/SS14M/SS16M 1.0Amp Surface Mount Schottky Barrier Rectifier Micro SMA Pb RoHS COMPLIANCE Features Cathode Band Very low prfile - typical height of 0.68mm Ideal for automated placement Low forward voltage drop. Low power loss. High efficiency Meet MSL level 1, per J-STD-020D

JESD22-B102D

Abstract: J-STD-002B J-STD-020D SS14M Micro Inverter
Contextual Info: SS13M/SS14M/SS16M 1.0Amp Surface Mount Schottky Barrier Rectifier Micro SMA Pb RoHS COMPLIANCE Features Very low profile - typical height of 0.68mm Ideal for automated placement Low forward voltage drop. Low power loss. High efficiency 0.106 2.70 0.091(2.30)

SS14

Contextual Info: SS12-M3, SS13-M3, SS14-M3, SS15-M3, SS16-M3 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency

Contextual Info: SS13M thru SS16M Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: SS13M thru SS16M Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity level: level 1, per J-STD-020

Contextual Info: SS12LS thru SS115LS Taiwan Semiconductor CREAT BY ART Surface Mount Schottky Barrier Rectifier FEATURES - Ideal for automated placement - Compact package size, profile <0.85mm - High surge current capability - Low power loss, high efficiency - AEC-Q101 qualified and Halogen free only

SS14 SOD123

Abstract: FM1150
Contextual Info: FM120-M+ FM120LS WILLAS THRUTHRU 1.0A SCHOTTKY BARRIER RECTIFIERS - 20V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SMA-LS PACKAGE FM1200-M+ FM1200LS Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

SS14 DIODE schottky

Abstract: DIODE ss14 SS14 DC DC SS14 diode 403D SS12T3 SS12T3G SS14 SS14T3 SS14T3G
Contextual Info: SS12, SS14 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

SS16MHRSG

Contextual Info: SS13M thru SS16M Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity level: level 1, per J-STD-020

Contextual Info: SS13M thru SS16M Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity level: level 1, per J-STD-020