MARKING CODE SS* SOT23 Search Results

Contextual Info: SIEMENS Silicon N Channel MOS FET Triode BF 543 Preliminary Data • For R F stages up to 300 MHz preferably in FM applications • lo ss = 4 mA, gis = 12 mS ESD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code

Contextual Info: Supertex inc. 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v d ss/ b v dgs R dS ON (m ax) Id(ON) (m in) 60V 7.5Q. 0.5A O rd e r N um ber / Package Product marking for TO-236AB: TO-236AB* 702* 2N7002 where * = 2-week alpha date code

marking code SS SOT23

Abstract: MARKING CODE R2A marking CODE r1a R2B marking code R1B marking code 432T R2B making AP432 AP432N SOT-23 R2B
Contextual Info: Advanced Power Electronics Corp. AP432 Adjustable Precision Shunt Regulator „ Features „ General Description - Precision reference voltage B : 1.24V ± 1% A : 1.24V ± 0.5% - Sink current capability: 200mA. - Minimum cathode current for regulation: 150µA

marking 016w

Abstract: Marking code 016w APE8865 hf xdsl router marking code SS SOT23 Y5 sot23 SC70-4L SC-70-5L SC70-5L
Contextual Info: Advanced Power Electronics Corp. APE8865 300mA LOW DROPOUT LINEAR REGULATOR FEATURES DESCRIPTIOON Low Dropout Voltage of 250mV at 300mA The APE8865 series are low dropout, positive Guaranteed 300mA Output Current linear regulators with very low quiescent current.

bss138

Abstract: bss138 MARKING BSS138 SS all diodes ratings DMOS FET marking code SS SOT23 BSS138TA marking ss BSS138/BSS100 TO-92
Contextual Info: A Product Line of Diodes Incorporated BSS138 50V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN SOT23 Features and Benefits Mechanical Data • • • • • • • • BVDSS > 50V RDS on ≤ 3.5Ω @ VGS= 5V Maximum continuous drain current ID = 200mA

marking code SS SOT23

Abstract: SOT23-5 pwm generator marking ER sot23-5 step-down 5v sot23 SS MARKING sot23 marking code 10 sot23 marking code ce SOT23 AP1604 AP1604A B240A
Contextual Info: AP1604 PWM/PFM Dual Mode Step-down DC/DC Converter „ Features „ General Descriptions - Input voltage range: 2.2V~5.5V VOUT type - Oscillator frequency: 600KHz (Typ.) - Internal reference: 1.0V (Typ.) - High efficiency: 93% (Typ .) - Stand-by capability: ISTB=2µA. (Typ.)

8805r

Abstract: 8805 VOLTAGE REGULATOR 8805r 33 MARKING 8805 APE8805 KR SOT MARKING
Contextual Info: Advanced Power Electronics Corp. APE8805 600mA LOW DROPOUT LINEAR REGULATOR FEATURES ● Low Dropout Voltage of 600mV at 600mA ● Guaranteed 600mA Output Current ● Very Low Quiescent Current at about 30uA ● Max. ± 2%Output Accuracy ● Needs Only 1µF Capacitor for Stability

XTAL 50MHZ

Abstract: PL671-21-XXXTC-R SMD INDUCTOR Marking Code
Contextual Info: Preliminary PL671-21/-22 PicoEMI T M Programmable Spread Spectrum Clock FEATURES 2 3 6 GND 5 CLK0 4 VDD SOT23-6L 3 1 XOUT 2 PDB^/REFOut 3 NC 4 8 VDD 7 NC 6 CLK0 5 GND 8 VDD 7 NC 6 CLK0 5 GND SOP-8L 6 GND 5 CLK0 4 VDD SOT23-6L XIN/FIN 1 XOUT 2 CSEL^ 3 NC

Contextual Info: Advanced Power Electronics Corp. APE8866 600mA LOW DROPOUT LINEAR REGULATOR FEATURES DESCRIPTIOON Application for Extreme Low Output Voltage The APE8866 series are low dropout, positive linear regulators with very low quiescent current. The APE8866 can supply 600mA output current with a low dropout voltage

marking code SS SOT23

Abstract: smd code marking sot23 SL 100 NPN Transistor equivalent of SL 100 NPN Transistor transistor marking DG marking codes SOT23 SS MARKING SMD IC CODE smd code marking ft sot23 SMD MARKING CODE transistor 2PB709ARL
Contextual Info: 2PB709ARL; 2PB709ASL 45 V, 100 mA PNP general-purpose transistors Rev. 01 — 12 November 2008 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package.

APE8800A-25Y5P

Abstract: APE8800A-33Y5P APE8800A sot-23-5 marking code APE8800A-18Y5P APE8800A-15Y5P MARKING Y5 SOT-23-5 SOT-23-5 HF APE8800
Contextual Info: Advanced Power Electronics Corp. APE8800A 300mA Low Dropout Linear Regulator with Shutdown Description Features The APE8800A is a low dropout, positive linear regulator with very low quiescent current. The APE8800A can supply 300mA output current with low dropout

Contextual Info: Advanced Power Electronics Corp. APE8867 300mA LOW DROPOUT LINEAR REGULATOR FEATURES DESCRIPTIOON Application for Extreme Low Output Voltage The APE8867 series are low dropout, positive linear regulators with very low quiescent current. The APE8867 can supply 300mA output current with a low dropout voltage

step-down 5v sot23

Abstract: AP1635S B240A AP1635
Contextual Info: AP1635 PWM/PFM DUAL MODE STEP-DOWN DC/DC CONVERTER General Description Features • • • • • • Input voltage range: 2.2V~5V VOUT type Oscillator frequency: 700KHz (Typ.) Internal reference: 1.0V (Typ.) High efficiency: 93% (Typ.) Current limit and thermal shutdown protection

APE8800G

Abstract: APE8800GR
Contextual Info: Advanced Power Electronics Corp. APE8800 300mA LOW DROPOUT LINEAR REGULATOR FEATURES DESCRIPTION ● Low Dropout Voltage of 250mV at 300mA ● Guaranteed 300mA Output Current ● Very Low Quiescent Current at about 30uA ● ±2% Output Voltage Accuracy for 1.5V,1.8V, 2.5V

supertex dmos

Contextual Info: Supertexinc. LNE150 Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information ^DS O N Order Number / Package ' d (ON) BVDOs (max) (min) TO-236AB* 500V 1.0K£1 3.0mA LNE150K1 Product marking for TO-236AB: Die NEE* LNE150ND where * = 2-week alpha date code

AP2306AGEN

Abstract: marking code SS SOT23 A2 SOT-23 mosfet SS MARKING sot23 sot-23 MARKING CODE GS 5
Contextual Info: AP2306AGEN RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive D ▼ Small Outline Package BVDSS 30V RDS ON 50mΩ ID ▼ Surface Mount Device 4.1A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to

AP2316GN

Abstract: SS MARKING sot23 marking code SS SOT23 N-CHANNEL MOSFET 30V 2A SOT-23 AP2316 A2 SOT-23 mosfet
Contextual Info: AP2316GN RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline D BVDSS 30V RDS ON 42mΩ ID ▼ Surface Mount Device 4.7A S SOT-23 Description G Advanced Power MOSFETs utilized advanced processing techniques to

sot-23 MARKING CODE nm

Abstract: marking code SS SOT23 SS MARKING sot23 AP2318GEN sot23 marking code SS A2 SOT-23 mosfet
Contextual Info: AP2318GEN RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive D ▼ Small Outline Package BVDSS 30V RDS ON 1.5Ω ID ▼ Surface Mount Device 500mA S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to

marking code SS SOT23

Abstract: SS MARKING sot23 AP2311GN A2 SOT-23 mosfet
Contextual Info: AP2311GN RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small Package Outline BVDSS -60V RDS ON 250mΩ ID ▼ Surface Mount Device - 1.8A S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the

k72 sot-23

Abstract: sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303
Contextual Info: TM Micro Commercial Components MOSFETS MCC Part Number Power Rating DrainSource Voltage Gate Threshold Voltage Drain Current Static DrainSource On Resistance PD VDS VGS ID rDS on (mW) V V mA Ω Polarity Marking Code Package Type Internal Diagram SMALL SIGNAL MOSFETS

BCX17

Abstract: BCX18R marking of m7 diodes sot 23 marking code T2 sot marking t5 T4 MARKING CODE I8 SOT23 Diode marking m7 t4 u4 BCX17R
Contextual Info: FERRANTI semiconductors BCX17 BCX18 PNP Si licon Planar M e d i u m P o w e r Transistors DESCRIPTION These devices are intended for saturated sw itching, general purpose sw itch in g and driver applications. Com plem entary to the BCX19 and BCX20. Encapsulated in the popular SO T-23 package these devices

sot-23 MARKING CODE G1

Abstract: code marking 2M sot-23 sot23 marking m8 marking code T4 SOT-23 sot 23 marking code 2t A56 sot ferranti marking code FA sot23 FMMT-A56 amplifier A55 marking
Contextual Info: i FERRANTI FMMT-A55 FMMT-A56 T IIsemiconductorsL PNP Sili con Planar M e d i u m P o w e r Transistors D E S C R IP T IO N M e d iu m pow er transisto rs designed fo r sm all and am plification from d.c. to radio frequencies, in tio n s such as A u d io Frequency Am plifiers,

MARKING CODE A06

Abstract: marking 1G SOT23 sot-23 MARKING CODE G1 AH A06 sot-23 body marking 1P NPN e30551 marking A06 A12 marking amplifier A55 marking sot-23 Marking G1
Contextual Info: FERRANTI * semiconductors FMMT-A05 FM MT-AO6 NPN Silicon Planar Medium Power Transistors D E S C R IP T IO N M e d iu m pow er transistors designed fo r sm all and medium am plification from d.c. to radio frequencies, in applica­ tio n s such as Audio Frequency Am plifiers, Drivers,

Contextual Info: Supertex inc. LNE150 Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information b v dss/ R d S ON Order Number / Package I d (ON) Product marking for TO-236AB: b v dgs (max) (min) TO-236AB* Die NEE* 500V 1.0K& 3.0mA LNE150K1 LNE150ND where * = 2-week alpha date code