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    MARKING CODE QV TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    MARKING CODE QV TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    marking code vl

    Abstract: MARKING CODE G10 MARKING a10 MARKING 113Z transistor marking ra
    Contextual Info: UMA10N / FMA10A / IMB7A UMG10N Transistors Digital Transistor Dual Digital Transistors for Inverter Driver I UMA10N / FMA10A / IMB17A •Features •A b s o lu te maximum ratings (Ta=25t;} 1 ) Two DTA113Z transistors are housed in a UM T or SM T package.


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    UMA10N FMA10A UMG10N IMB17A DTA113Z FMA10A, IMB17A marking code vl MARKING CODE G10 MARKING a10 MARKING 113Z transistor marking ra PDF

    Contextual Info: Central" CMXT3946 Semiconductor Corp. SURFACE MOUNT DUAL COMPLEMENTARY SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT3946 type is a dual complementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur­


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    CMXT3946 OT-26 192/C 06-January OT-26 PDF

    Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3117 NPN SILICON TRANSISTOR TO-18CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage UNITS SYMBOL ^CBO ^ Collector-Emitter Voltage VCEO


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    2N3117 O-18CASE PDF

    marking code SS SOT23

    Abstract: marking code SS SOT23 transistor
    Contextual Info: 3STR1630 Low voltage high performance NPN power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package ECOPACK 2 grade for surface mounting circuits


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    3STR1630 OT-23 OT-23 marking code SS SOT23 marking code SS SOT23 transistor PDF

    J148

    Abstract: MJD148T4 NPN Silicon Power Transistor DPAK
    Contextual Info: MJD148 NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • High Gain − 50 Min @ IC = 2.0 A • Low Saturation Voltage − 0.5 V @ IC = 2.0 A • High Current Gain − Bandwidth Product − fT = 3.0 MHz Min @


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    MJD148 J148 MJD148T4 NPN Silicon Power Transistor DPAK PDF

    Z84C00

    Abstract: Z84C20 Z84C30 Z84C90 Z80 KIO SY86 SY97
    Contextual Info: Z84C90 KIO Serial/Parallel Counter Timer Product Specification 36 =L/2* :RUOGZLGH +HDGTXDUWHUV ‡   +DPLOWRQ $YHQXH ‡ &DPSEHOO &$  7HOHSKRQH  ‡ D[  ‡ KWWSZZZ=L/2*FRP This publication is subject to replacement by a later edition. To determine whether a later edition exists, or


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    Z84C90 Z84C00 Z84C20 Z84C30 Z84C90 Z80 KIO SY86 SY97 PDF

    Contextual Info: HCF4013 Dual D-type flip-flop Datasheet - production data Applications • Automotive • Industrial PDIP14 • Computer SO14 • Consumer Description Features • Set-reset capability • Static flip-flop operation - retains state indefinitely with clock level either “high” or “low”


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    HCF4013 PDIP14 HCF4013 DocID2023 PDF

    HCF4013BE

    Contextual Info: HCF4013 Dual D-type flip-flop Datasheet - production data Applications • Automotive • Industrial PDIP-14 • Computer SO-14 • Consumer Description Features • Set-reset capability • Static flip-flop operation - retains state indefinitely with clock level either “high” or “low”


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    HCF4013 PDIP-14 SO-14 HCF4013 DocID2023 HCF4013BE PDF

    HCF4013BE equivalent

    Abstract: HCF4013BE HCF4013Y HCF4013BEY HCF4013 DUAL FLIPFLOP STMicroelectronics marking code date so-14 HCF4013
    Contextual Info: HCF4013 Dual D-type flip-flop Datasheet − production data Features • Set-reset capability ■ Static flip-flop operation - retains state indefinitely with clock level either “high” or “low” ■ Medium speed operation 16 MHz typ. , clock toggle rate at 10 V


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    HCF4013 PDIP-14 SO-14 HCF4013 SO-14 HCF4013BE equivalent HCF4013BE HCF4013Y HCF4013BEY HCF4013 DUAL FLIPFLOP STMicroelectronics marking code date so-14 PDF

    MJD148

    Contextual Info: MJD148 Preferred Device NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves • • • • http://onsemi.com


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    MJD148 r14525 MJD148/D MJD148 PDF

    HCF4051

    Contextual Info: HCF4051 Single 8-channel analog multiplexer/demultiplexer Datasheet - production data • Input leakage current II = 100 nA max. at VDD = 18 V, TA = 25 °C • 100 % tested for quiescent current 3',3 Applications 62  • Automotive Features • Industrial


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    HCF4051 DocID2053 HCF4051 PDF

    j148g

    Contextual Info: MJD148, NJVMJD148T4G NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • High Gain − 50 Min @ IC = 2.0 A  Low Saturation Voltage − 0.5 V @ IC = 2.0 A


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    MJD148, NJVMJD148T4G AEC-Q101 MJD148/D j148g PDF

    J148

    Abstract: j148g NPN Silicon Power Transistor DPAK MJD148 MJD148T4 MJD148T4G
    Contextual Info: MJD148 NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • High Gain − 50 Min @ IC = 2.0 A • Low Saturation Voltage − 0.5 V @ IC = 2.0 A • High Current Gain − Bandwidth Product − fT = 3.0 MHz Min @


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    MJD148 MJD148/D J148 j148g NPN Silicon Power Transistor DPAK MJD148 MJD148T4 MJD148T4G PDF

    j148g

    Contextual Info: MJD148, NJVMJD148T4G NPN Silicon Power Transistor DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • • • • • • High Gain Low Saturation Voltage High Current Gain − Bandwidth Product


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    MJD148, NJVMJD148T4G AEC-Q101 MJD148/D j148g PDF

    bc639

    Abstract: BC63x BC639-16ZL1 BC637
    Contextual Info: BC635, BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features http://onsemi.com • Pb−Free Package is Available* COLLECTOR 2 3 BASE MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BC635 BC637 BC639 Collector-Base Voltage BC635 BC637


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    BC635, BC637, BC639, BC639-16 BC635 BC637 BC639 BC63x BC639-16ZL1 PDF

    J148G

    Abstract: J148 MJD148 MJD148T4 MJD148T4G mjd1 NPN Silicon Power Transistor DPAK
    Contextual Info: MJD148 NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. http://onsemi.com POWER TRANSISTOR 4.0 AMPERES 45 VOLTS, 20 WATTS Features • High Gain − 50 Min @ IC = 2.0 A


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    MJD148 MJD148/D J148G J148 MJD148 MJD148T4 MJD148T4G mjd1 NPN Silicon Power Transistor DPAK PDF

    J148

    Abstract: MJD148 MJD148T4
    Contextual Info: MJD148 NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • High Gain − 50 Min @ IC = 2.0 A • Low Saturation Voltage − 0.5 V @ IC = 2.0 A • High Current Gain − Bandwidth Product − fT = 3.0 MHz Min @


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    MJD148 MJD148/D J148 MJD148 MJD148T4 PDF

    J148G

    Abstract: j148 NPN Silicon Power Transistor DPAK MJD148 MJD148T4 MJD148T4G MS10 marking code QV transistor
    Contextual Info: MJD148 NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. http://onsemi.com POWER TRANSISTOR 4.0 AMPERES 45 VOLTS, 20 WATTS Features • High Gain − 50 Min @ IC = 2.0 A


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    MJD148 MJD148/D J148G j148 NPN Silicon Power Transistor DPAK MJD148 MJD148T4 MJD148T4G MS10 marking code QV transistor PDF

    2N5192G

    Contextual Info: 2N5190G, 2N5191G, 2N5192G Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com 4.0 AMPERES NPN SILICON POWER TRANSISTORS


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    2N5190G, 2N5191G, 2N5192G 2N5194, 2N5195. 2N5190G 2N5191G 2N5192G PDF

    Contextual Info: 2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, − excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com Features 4.0 AMPERES NPN SILICON POWER TRANSISTORS


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    2N5190, 2N5191, 2N5192 2N5194, 2N5195. 2N5190 2N5191 PDF

    2N5192G

    Abstract: 2N5190 2N5190G 2N5190..92 pin details of 2N5190 2N5191 2N5191G 2N5192 2N5194 2N5195
    Contextual Info: 2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com Features • ESD Ratings: Machine Model, C; > 400 V


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    2N5190, 2N5191, 2N5192 2N5194, 2N5195. 2N5190 2N5191 2N5192G 2N5190 2N5190G 2N5190..92 pin details of 2N5190 2N5191 2N5191G 2N5192 2N5194 2N5195 PDF

    Contextual Info: 2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com Features • ESD Ratings: Machine Model, C; > 400 V


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    2N5190, 2N5191, 2N5192 2N5194, 2N5195. 2N5190 2N5191 PDF

    Contextual Info: 2N5190G, 2N5191G, 2N5192G Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, − excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com 4.0 AMPERES NPN SILICON POWER TRANSISTORS


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    2N5190G, 2N5191G, 2N5192G 2N5194, 2N5195. 2N5190G 2N5191G PDF

    HCF4069UBE

    Abstract: HCF4069YUM013TR hcf4049 HCF4069Y
    Contextual Info: HCF4069U Hex inverter Datasheet - production data Applications • Automotive • Industrial • Computer PDIP-14 SO-14 • Consumer Description Features • Medium-speed operation tPD = 30 ns typ. at 10 V • Standardized symmetrical output characteristics


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    HCF4069U PDIP-14 SO-14 SO-14 HCF4069U HCF4069Y HCF4069UBE HCF4069UBE HCF4069YUM013TR hcf4049 PDF