MARKING CODE N FOR RF TRANSISTOR Search Results

Contextual Info: 32E D • Û 2 3 b 3 2 0 OGlbTS*! 7 « S I P PNP Silicon RF Transistor S IE M E N S / SPCL-, SEMICONDS • BF 660 T - 3 M 7 _ Particularly suitable for application in VHF tuner oscillators Type Marking Ordering code for versions in bulk Ordering code for

Contextual Info: CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications.

RF TRANSISTOR

Abstract: ic 556 datasheet CMPTH81 MARKING CODE 16 transistor sot23 sot 23 marking code R4 sot23 marking code 16
Contextual Info: CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications.

Transistor C3E

Abstract: RF TRANSISTOR CMPTH10 MARKING CODE C3E marking code R5 sot23
Contextual Info: CMPTH10 SURFACE MOUNT NPN SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF

RF TRANSISTOR

Abstract: transistor NF marking code CMPT5179
Contextual Info: CMPT5179 SURFACE MOUNT NPN SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5179 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise, high frequency

Contextual Info: CMUT5179 SURFACE MOUNT NPN SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5179 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini surface mount package, designed for

Contextual Info: CMPT5179 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5179 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise, high frequency

CMUT5179

Contextual Info: CMUT5179 SURFACE MOUNT NPN SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5179 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini surface mount package, designed for

Contextual Info: CMPT918 SURFACE MOUNT NPN SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT918 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high frequency

12V marking code sot 23

Abstract: CMPT918 transistor NF marking code marking code R5 sot23 r5 rf transistor transistor t 04 27
Contextual Info: CMPT918 SURFACE MOUNT NPN SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT918 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high frequency

transistor BFT 95

Abstract: transistor BC 171 bft95 pnp transistor 3609 TRANSISTOR MS 173 TRANSISTOR 3611 transistor bc 238 b transistor bf 171 MARKING CODE AM sot-23 telefunken transistor
Contextual Info: TELEFUNKEN ELECTRONIC SIC D ▼ • 812001b 000531!, 8 «ALG S T~3/-'~ m iBraaBSIEI» electronic BPr qB B FT 95 i Creative Technologies Silicon PNP Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier !

MOTOROLA DATE CODE transistor

Abstract: MSC2295–BT1
Contextual Info: MOTOROLA SC XSTRS/R F 4bE J> • b3b?2S4 00^3721 2 H f l O T ±T ~ 3H £ Order this data sheet by MSC2295-BT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MSC2295-BT1 MSC2295-CT1 NPN Silicon RF Amplifier Transistor M o to r o la p r e f e r r e d d e v ic e s

2n5109

Abstract: Transistor 2N5109 VCE-15V
Contextual Info: 2N5109 SILICON NPN RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications.

MARKING W3 SOT23 TRANSISTOR

Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

Contextual Info: BC846A/B, BC847A/B/C, BC848A/B/C Taiwan Semiconductor Small Signal Product NPN Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface mount device type - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate

BF240

Abstract: BF240 CEB CEB npn DATE CODE FAIRCHILD
Contextual Info: BF240 BF240 NPN RF Transistor TO-92 1 1. Collector 2. Emitter 3. Base Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value 40 VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current

bfy90

Contextual Info: BFX89 BFY90 SILICON NPN RF TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BFX89 and BFY90 are silicon NPN RF transistors designed for VHF/UHF amplifier, oscillator and converter applications. MARKING: FULL PART NUMBER

transistor b35

Abstract: marking code b35 b35 sot23 uhf vhf amplifier bo 913 sot-23 npn marking code cr CMPTH10 Transistor C3E MARKING CODE C3E MARKING CODE B35 SOT
Contextual Info: Central" CMPTH10 Semiconductor Corp. NPN SILICON RF TRANSISTOR DESCRIPTION: The C E N TR A L S E M IC O N D U C TO R CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and

Contextual Info: BC807-16/-25/-40 Taiwan Semiconductor Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor FEATURES - Ideally suited for automatic insertion - Epitaxial planar die construction - For switching, AF driver and amplifer applications - Complementary NPN type available BC817

Contextual Info: Central TM Sem i c o n d u c t o r C o r p . CMPTH10 NPN SILICON RF TRANSISTOR DESCRIPTION: The C ENTRAL S EM IC O N D U C TO R CMPTHIOtypeis an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

LDJ2H825M03FA062

Abstract: AWB7225 DATE CODE MURATA Hybrid Couplers
Contextual Info: AWB7225 860 - 894 MHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

MMBTH10

Abstract: MMBTH10-7-F DIODES Inc diodes marking
Contextual Info: MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR Features • • • • • Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications with collector currents in the 100 A - 30 mA Range

sd4931

Contextual Info: SD4931 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 150 W min. with 14.8 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European

telefunken ta 350

Abstract: transistor BC 310 BF310 BC238C MOSFET sot-143 TO92 telefunken transistors Transistor A12 transistor AC 237 transistor bc 238 b
Contextual Info: TELEFUNKEN ELECTRONIC filC fi^ S O O ^ b D 0 0 0 5 1 0 ^ 5 • AL66 T ~ 3 f~ / y BF 310 TitUlFOMKIlIM electronic Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: General up to 100 MHz In common base conflguratlon Features: • Small feedback capacltance