MARKING CODE MS SOT323 Search Results

Contextual Info: SIEMENS BCR 183W PNP Silicon Digital Transistor Type Marking O rdering Code Pin Configuration BCR 183W W Ms Q62702-C 2276 1= B Package 2 = E 3 = C SOT-323 M axim um Ratings Param eter Sym bol C ollector-em itter voltage ^CEO 50 C ollector-base voltage ^CBO

Contextual Info: STWD100 Watchdog timer circuit Datasheet - production data Applications • Telecommunications  Alarm systems  Industrial equipment  Networking SOT23-5 WY  Medical equipment SC70-5, SOT323-5 (W8)  UPS (uninterruptible power supply) Features

marking FR PNP SOT323

Abstract: BF824W
Contextual Info: Philips Semiconductors Product specification PNP RF transistor BF824W FEATURES • S-mini package. H= FI 1 c APPLICATIONS It is especially Intended for RF stages in FM front-ends in common base configuration. Ü» Top view DESCRIPTION PNP transistor in a plastic SOT323

A1s sot23

Abstract: BAW56S E6327 MARKING CODE A1s
Contextual Info: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration BAW56 BAW56T BAW56W BAW56S BAW56U 6 3 4 5 D 3 D 1 D 1 1 D 4 D 2 2 Type BAW56 BAW56S BAW56T BAW56U BAW56W 1 D 2 2 3 Package SOT23 SOT363 SC75 SC74 SOT323

TRANSISTOR SMD CODE PACKAGE SOT323

Abstract: TRANSISTOR SMD MARKING CODES MARKING SMD PNP TRANSISTOR 2a PMST3904 PMST3906 pmst3906 transistor smd transistor MARKING 2A npn MARKING CODE SMD IC transistor sc-70 marking codes 1325 pnp
Contextual Info: PMST3906 40 V, 200 mA PNP switching transistor Rev. 05 — 29 April 2009 Product data sheet 1. Product profile 1.1 General description PNP switching transistor in a SOT323 SC-70 very small Surface-Mounted Device (SMD) plastic package. NPN complement: PMST3904.

PBSS4160U

Abstract: PBSS5160U
Contextual Info: PBSS5160U 60 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 11 August 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package.

Contextual Info: NX7002AKW 60 V, single N-channel Trench MOSFET 11 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

n channel mosfet vds max 60v, id max 260ma

Contextual Info: DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) • • • • • • • • • ID TA = +25°C Package 300mA 3Ω @ VGS = 10V SOT323 60V 260mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

PBSS4160U

Abstract: PBSS5160U
Contextual Info: PBSS5160U 60 V, 1 A PNP low VCEsat BISS transistor Rev. 04 — 2 October 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.

PBSS4160U

Abstract: PBSS5160U
Contextual Info: PBSS4160U 60 V, 1 A NPN low VCEsat BISS transistor Rev. 03 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package.

Contextual Info: PBSS4160U 60 V, 1 A NPN low VCEsat BISS transistor Rev. 03 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package.

NX3020NAK

Contextual Info: NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 30 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

TRANSISTOR SMD MARKING CODE 2x

Abstract: PBSS4160U PBSS5160U
Contextual Info: PBSS4160U 60 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 19 July 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package.

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Contextual Info: PMF87EN 30 V, single N-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using

BSS138PW

Abstract: NXP SMD mosfet MARKING CODE MOSFET TRANSISTOR SMD MARKING CODE A1 smd code marking WV FET marking codes sc-70 NXP SMD diode MARKING CODE transistor SMD MARKING CODE 14
Contextual Info: BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using

Contextual Info: SO T3 23 PMF170XP 20 V, 1 A P-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T3 23 NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: UM2302 60V D-S Small Signal MOSFET UM2302S SOT23-3 UM2302P SOT323 General Description The UM2302 is a low threshold N-channel MOSFET, which has low on-resistance, high reliability and stability, as well as fast switch capability and high saturation current. This benefit

Contextual Info: SO T3 23 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

A1 SOT323 MOSFET P-CHANNEL

Contextual Info: SO T3 23 NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET Rev. 1 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

bss138bkw

Contextual Info: SO T3 23 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

BSS84AKW

Abstract: BSS84AKW/DG/B2215 A1 SOT323 MOSFET P-CHANNEL
Contextual Info: SO T3 23 BSS84AKW 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

A1 SOT323 MOSFET P-CHANNEL

Abstract: transistor sc-70 marking codes FET marking codes sc-70
Contextual Info: SO T3 23 BSS84AKW 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.