MARKING CODE L13 Search Results
MARKING CODE L13 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TC4511BP | Toshiba Electronic Devices & Storage Corporation | CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 | Datasheet | ||
| 68305-001LF | Amphenol Communications Solutions | Din Accessory Coding | |||
| 65197-001LF | Amphenol Communications Solutions | Din Accessory Coding Part | |||
| 70275-001LF | Amphenol Communications Solutions | 70275-001LF-METRAL FEM CODING PART | |||
| 91290-101LF | Amphenol Communications Solutions | Board-to-Board Coding System, Receptacle Key, LF |
MARKING CODE L13 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TYPE PRODUCTS Surface Mount Chip LED PAGE SML-L13DTAFS / < Specifications Precautions and Prohibitions > ● Precaution for circuit design 1) The products are designed and produced for application in ordinary electronic equipment (AV equipment, OA equipment, telecommunication equipment, home appliances, amusement equipment, etc.). |
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sml-l13dtafstsz22111 | |
SIP 8R 8C
Abstract: ALPHA YEAR DATE CODE 0814 de marking code 8T g8 marking code 8309 8r 8050 lm 8344 MANUFACTURE LOGO marking CODE Y8
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0808cs0832sip 8r 8calpha year date code+8 | |
alpha POTENTIOMETERS
Abstract: ALPHA YEAR DATE CODE ALPHA YEAR CODE trace code alpha week code 8309 marking code 8P marking code 8T g8 marking code 8323 soic
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0808calpha potentiometersalpha year date codealpha year code+7 | |
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Contextual Info: International 1 ]Rectifier PD — IR L13303 p re lim in a ry HEXFET® Power MOSFET • • • • • • Logic-Level Gate Drive Ad van ced P rocessTechnology Isolated Package High Voltage Isolation = 2.5 K V R M S Sink to Lead Creepage Dist. = 4.8mm |
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l13303 | |
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Contextual Info: SS22L thru SS215L Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level : level 1, per J-STD-020 |
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ss22lss215lj-std-0202011/65/eu+4 | |
ru 94v0Contextual Info: SS22L thru SS215L Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 |
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ss22lss215lj-std-0202011/65/eu+5 | |
S1MLContextual Info: S1AL thru S1ML Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Rectifier - Glass passivated junction chip - Ideal for automated placement - Low-Profile Package - Low power loss, high efficiency - AEC-Q101 qualified Green compound not involved - Moisture sensitivity level: level 1, per J-STD-020 |
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aec-q101j-std-0202011/65/eu2002/96/ec+3 | |
ESCC-3201
Abstract: ct08 series ct01 PRIM-2 escc 3201 diode Marking code v3 Microspire 261J CT08 ECSS-Q-70-02
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ul94v-0escc-3201mil-std-202ecss-q-st-70-02c+10 | |
ct08 seriesContextual Info: 69 • • • • • • • Electrical Data 25°C Materials meet UL94V-0 rating Global accuracy ± 10 % Applied standards : ESCC-3201 generic ( including MIL-STD-202 ) / ECSS-Q-ST-70-02C and ESCC 3201 generic specification for space products Frequency range 10 kHz to 250 kHz |
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ul94v-0escc-3201mil-std-202ecss-q-st-70-02c+3 | |
261xxContextual Info: 66 • Materials meet UL94V-0 rating • Global accuracy ± 10 % • Applied standards : ESCC-3201 generic including MIL-STD-202 / ECSS-Q-70-02 • Frequency range 10 kHz to 250 kHz • Operating temperature range : - 55 °C to + 125 °C • Suited for IR and vapor reflow soldering |
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ul94v-0escc-3201mil-std-202ecss-q-70-02+2 | |
82C11
Abstract: 82CXX 82C16 l41 marking code MARKING CODE L47 82C45 82c56 marking code L31 marking code l35 marking code l19
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82cxxot-23100ppm/ot-89+14 | |
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Contextual Info: MBR2035CT thru MBR20200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and |
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mbr2035ctmbr20200ct2011/65/eu2002/96/ec+4 | |
82c11
Abstract: 82c56 82c53 82C31 pin DIAGRAM OF IC 82C55 82C25 82C51 82c53-5 82C58 82C42
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82cxxot-25ot-23100ppm/+14 | |
MARKING L50 SOT23-5
Abstract: 82C25 82C11
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82cxxot-23-3ot-23o-236+8 | |
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82C11
Abstract: 82C16 82C25 82c12 82c56 l41 marking code 82C25 CAN 82C62 82C28 l33 marking sot23
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82cxxot-23ot-25100ppm/+11 | |
82c11
Abstract: 82C56 82C12 82C42 82C58 l21 diode marking l48 diode marking marking codes LXX 05 82C16 SOT marking l33
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82cxxot-25ot-23100ppm/+12 | |
SchottkyContextual Info: MBR1035 thru MBR10200 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC |
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mbr1035mbr102002011/65/eu2002/96/ec+5 | |
FSS13L
Abstract: FSS14L FSS110L DO219AA FSS115L
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fss12lfss115ldo219aars-481+4 | |
12-TYPICAL
Abstract: fss14L
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fss12lfss115ldo219aars-481+3 | |
marking LX5Contextual Info: FSS12L.FSS115L 1.0 Amp. Surface Mounted Glass Passivated Schottky Barrier Rectifier Dimensions in mm. Voltage 20 to 150 V CASE: M1F DO219AA Current 1.0 A R For surface mounted application Low profile package Ideal for automated pick & place |
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fss12lfss115ldo219aars-481+2 | |
marking LX5
Abstract: MARKING CODE L13 marking 14L Marking Code 14L
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fss12lfss115ldo219aars-481+5 | |
SchottkyContextual Info: MBR2035CT thru MBR20200CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and |
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mbr2035ctmbr20200ct2011/65/eu2002/96/ec+5 | |
82C12Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 82CXX CMOS IC VOLTAGE DETECTORS 3 3 DESCRIPTION 2 The UTC 82CXX series are good performance 3-terminals voltage detectors and manufactured by CMOS technologies with highly accurate, low power consumption. The detection voltage is |
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82cxxot-23-3ot-23o-236+6 | |
82c45
Abstract: 82C18
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82cxxot-23-3ot-23o-236+7 | |