MARKING CODE JS 3 PIN DIODE Search Results

BAS21HT1G

Abstract: BAS21HT1
Contextual Info: BAS21HT1 Preferred Device High Voltage Switching Diode Features • Pb−Free Packages are Available http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol VR VRRM IF IFM surge Rating Value Unit Continuous Reverse Voltage 250 Vdc Repetitive Peak Reverse Voltage

Pin diode G4S

Abstract: marking g4s Q62702-A1261
Contextual Info: SIEMENS BAR 63. W Silicon PIN Diode • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance • For frequencies up to 3 GHz BAR 63-04W BAR 63-05W BAR 63-06W C 1 /A 2 M /A2 ill m . / LJ \ . M Cl C2 eHA0718>

EHA07008

Contextual Info: SIEMENS BAT 64-07W Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage 4 m 3 -, 1 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution!

marking u1s SOT-143

Abstract: Marking code U1s sot143 marking code u1s switch diode DIODE JS Q62702-G38 DIODE Q marking
Contextual Info: Silicon Switching Diode Array ● Bridge configuration ● High-speed switch diode chip BGX 50 A Type Marking Ordering Code tape and reel BGX 50 A U1s Q62702-G38 Pin Configuration Package1) SOT-143 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage

44S DIODE

Abstract: Q62702-A1066 marking 45s marking C1 MARKING 44s Q62702-A1065 Q62702-A1067 cu marking code diode DIODE BAS JS v Marking on semiconductor 720
Contextual Info: BAS 40W Silicon Schottky Diode ● ● ● ● General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Type Ordering Code tape and reel Pin Configuration 1 2 3 BAS 40-04W BAS 40-05W BAS 40-06W Q62702-A1065

Contextual Info: p P R O lE K D E V I C E S E n g in e e r e d s o l u t i o n s f o r t h e t r a n s i e n t e n v i r o n m e n t PSMDA05C-4 thru PSMDA24C-4 BIDIRECTIONAL MONOLITHIC TVS DIODE ARRAY APPLICATIONS • • • • • IEC 1000-4 COMPATIBLE RS-232 & RS-423 Data Lines

BAS21SLT1

Contextual Info: BAS21SLT1 Preferred Device Dual Series High Voltage Switching Diode • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: Class 1 ESD Rating – Machine Model: Class B http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage

BAP70-04W

Abstract: 04W2
Contextual Info: BAP70-04W Silicon PIN diode Rev. 02 — 3 April 2007 Product data sheet 1. Product profile 1.1 General description Two planar PIN diodes in series configuration in a SOT323 small SMD plastic package. 1.2 Features • High voltage current control RF resistor for RF attenuators

Contextual Info: Formosa MS SMD Switching Diode BAV19WS THRU BAV21WS List List. 1 Package outline. 2

Contextual Info: K814P/ K824P/ K844P VISHAY Vishay Telefunken Optocoupler with Phototransistor Output Description The K814P/ K824P/ K844P consist of a phototransis­ tor optically coupled to 2 gallium arsenide infrared-emitting diodes reversed polarity in an 4-lead up to 16-lead plastic dual inline package.

BAP70-03

Abstract: DIODE SMD A9 diode MARKING A9
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP70-03 Silicon PIN diode Preliminary specification 2002 Jun 26 Philips Semiconductors Preliminary specification Silicon PIN diode BAP70-03 PINNING FEATURES • High voltage, current controlled RF resistor for attanuators

smd diode MARKING F6

Abstract: marking code diode Eb SMD smd "marking codes" c9 smd marking H6 smd E6 DIODE H5 c2 NXP date code marking NXP MARKING *H5 MARKING CODE E5 NXP H7 marking code smd
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BZX585 series Voltage regulator diodes Product data sheet Supersedes data of 2004 Mar 26 2004 Jun 22 NXP Semiconductors Product data sheet Voltage regulator diodes BZX585 series FEATURES PINNING • Total power dissipation: max. 300 mW

BAP51-02

Abstract: "MARKING CODE K1" marking code k1 MAM405
Contextual Info: BAP51-02 General purpose PIN diode Rev. 03 — 2 January 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

BAP51-03

Abstract: DIODE marking S4 06 SMD MARKING CODE s4 SC-76
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BAP51-03 General purpose PIN diode Product specification Supersedes data of 1999 Aug 16 2004 Feb 11 NXP Semiconductors Product specification General purpose PIN diode BAP51-03 FEATURES PINNING • Low diode capacitance PIN

BAS716

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAS716 Low-leakage diode Product data sheet 2003 Nov 07 NXP Semiconductors Product data sheet Low-leakage diode BAS716 FEATURES PINNING • Plastic SMD package PIN ; • Low leakage current: typ. 0.2 nA • Switching time: typ. 0.6 µs

BAP64-02

Abstract: BP317 MGL857
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP64-02 Silicon PIN diode Preliminary specification Supersedes data of 1999 Jun 16 1999 Sep 21 Philips Semiconductors Preliminary specification Silicon PIN diode BAP64-02 FEATURES PINNING • High voltage, current controlled

Contextual Info: SIEMENS BSP 171 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • Avalanche rated • ^GS th = -0.8.-2.0 V Pin 1 Pin 2 Pin 4 Pin 3 D G Type %S(on) 0.35 Q b -1.7 A BSP 171 V^DS -60 V Type BSP 171 Ordering Code Q67000-S224

s127 marking

Contextual Info: SIEMENS SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated Pin 1 G Pin 2 D Pin 3 Pin 4 D S Type Vbs b RDS on Package Marking Ordering Code BSP 318 S 60 V 2.6 A 0.15 Q SOT-223 BSP 318 S Q 67000-S127 Maximum Ratings

SOD323 BAS316

Abstract: DIODE SMD A6 BAS316 SC-76 diode SMD MARKING CODE A6 BAS316,115
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D049 BAS316 High-speed diode Product specification Supersedes data of 1998 Mar 26 2004 Feb 04 Philips Semiconductors Product specification High-speed diode BAS316 FEATURES PINNING • Very small plastic SMD package

"marking code D2"

Abstract: DIODE marking S4 06 SMD MARKING CODE s4 BAP63-03 SC-76
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BAP63-03 Silicon PIN diode Product specification Supersedes data of 2001 May 18 2004 Feb 11 NXP Semiconductors Product specification Silicon PIN diode BAP63-03 FEATURES PINNING • High speed switching for RF signals PIN

marking code k1

Abstract: BAP51-02 smd marking KM
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Product specification Supersedes data of 1999 Jul 01 2000 Jul 06 Philips Semiconductors Product specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance

MARKING CODE f5

Abstract: PMEG2015EV
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PMEG2015EV Low VF MEGA Schottky barrier diode Product data sheet Supersedes data of 2003 May 21 2003 Jun 03 NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode FEATURES PMEG2015EV PINNING • Forward current: 1.5 A

PMEG3010BEA

Abstract: PMEG2010BEA PMEG2010BEV PMEG3010BEV PMEG4010BEA PMEG4010BEV PMEGXX10BEA PMEGXX10BEV SC-76 SMD MARKING g5
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMEGXX10BEA; PMEGXX10BEV 1 A very low VF MEGA Schottky barrier rectifier Product data sheet Supersedes data of 2004 Apr 02 2004 Jun 14 NXP Semiconductors Product data sheet 1 A very low VF MEGA Schottky barrier rectifier

SMD MARKING g5

Abstract: smd diode g5 PMEG3010BEA diode smd marking SOD323 5-6 transistor smd code marking 420 PMEG2010BEA PMEG2010BEV PMEG3010BEV PMEG4010BEA PMEG4010BEV
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMEGXX10BEA; PMEGXX10BEV 1 A very low VF MEGA Schottky barrier rectifier Product specification Supersedes data of 2004 Apr 02 2004 Jun 14 Philips Semiconductors Product specification 1 A very low VF MEGA Schottky barrier rectifier