MARKING CODE IC 4A Search Results

Contextual Info: S O T- 2 3 B I P O L A R T R A N S I S T O R S NPN TRANSISTORS • New Product Marking VCEO hFE @VCE/IC VCEsat @IC/IB ICES @VCE Type Code V V/mA max.V mA/mA max.nA V BC817-16 6A 45 100-250 1/100 0.7 500/50 100 45 BC817-25 6B 45 160-400 1/100 0.7 500/50 100

Contextual Info: 2DD2098R LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 75mΩ at 4A Complementary PNP Type Available (2DB1386) Ideally Suited for Automated Assembly Processes

SOT89 MARKING CODE

Abstract: J-STD-020D rce marking 4A SOT89 MARKING CODE
Contextual Info: 2DD2098R LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW EW PRO P RODUC D UCT T Features • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 75mΩ at 4A

rce marking

Abstract: 2dd2098r 4A SOT89 MARKING CODE
Contextual Info: 2DD2098R LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW EW PRO P RODUC D UCT T Features • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 75mΩ at 4A

n412

Abstract: A1 marking code J-STD-020D DPLS31
Contextual Info: DNLS412E LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW EW PR P R ODUC ODUCT T Features • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 57.5mΩ at 4A

Contextual Info: DNLS412E LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 57.5mΩ at 4A High DC Current Gain hFE > 400 at IC = 3A Complementary PNP Type Available (DPLS315E)

Contextual Info: NOT RECOMMENDED FOR NEW DESIGN USE FZT688B DNLS412E LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Features •        Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 57.5m at 4A High DC Current Gain hFE > 400 at IC = 3A

Contextual Info: TS13005 High Voltage NPN Transistor TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE SAT Features 4A 1V @ IC=4A, IB=1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

power transistor Ic 4A NPN to - 251

Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NPN Transistor 450v 1A transistor a13
Contextual Info: TSC5804D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 4A 0.5V @ IC=1A, IB=0.2A Block Diagram ● High Voltage Capability

TSC5304EDCP

Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Contextual Info: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

NPN Transistor 1A 400V

Abstract: transistor 926 npn transistors 400V 1A transistor j 127 ITO-220 TS13005 TS13005CI TS13005CZ transistor marking 2a transistor ts13005
Contextual Info: TS13005 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 4A 1V @ IC / IB = 4A / 1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

Contextual Info: TSC236 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 4A 1.3V @ IC / IB = 2.5A / 0.6A Block Diagram  High Voltage  High Speed Switching Structure  Silicon Triple Diffused Type

Contextual Info: TS13005 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 4A 1V @ IC / IB = 4A / 1A Block Diagram  High Voltage  High Speed Switching Structure  Silicon Triple Diffused Type

TRANSISTOR K 1507

Abstract: 1348 transistor Transistor 1507 Transistor 1308 marking code 0632 tp 220 n
Contextual Info: TSC236 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 4A 1.3V @ IC / IB = 2.5A / 0.6A Block Diagram ● High Voltage ● High Speed Switching Structure ●

Contextual Info: A Product Line of Diodes Incorporated Green APT13005 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 450V   BVCES > 700V   BVEBO > 9V  IC = 4A high Collector Current  Lead-Free Finish; RoHS Compliant Notes 1 & 2

TP 1078

Abstract: transistor 926
Contextual Info: TSC128D High Voltage NPN Transistor with Diode TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter TO-263 2 D PAK PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

5210 diode

Abstract: NPN Silicon Power Transistor DPAK npn transistors 400V low power TSC5304D TSC5304DCH TSC5304DCP C5 MARKING TRANSISTOR L 0814 CW68
Contextual Info: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 2.5A / 0.5A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

TSC5304D

Abstract: TSC5304DCH TSC5304DCP power transistor Ic 4A NPN to - 251
Contextual Info: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

marking c08

Abstract: C08 marking 250V transistor npn 2a BM 0228 marking code C5 power transistor Ic 4A NPN to - 251 1A MARKING CODE C5 MARKING TRANSISTOR marking code B2 NPN Silicon Power Transistor DPAK
Contextual Info: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

TSC5304ED

Abstract: power transistor Ic 4A NPN to - 251 TSC5304EDCP transistor c10 TO-252 marking C10 marking C10
Contextual Info: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC 4A VCE(SAT) Features ● 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

Contextual Info: DSS20200L 20V PNP LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > -20V • • IC = -2A Continuous Collector Current • • ICM = -4A Peak Pulse Current Case: SOT23 Case Material: molded plastic, “Green” molding compound UL Flammability Classification Rating 94V-0

y1 marking code transistor

Abstract: HSB1386I transistor mark code H1
Contextual Info: HI-SINCERITY Spec. No. : HI200201 Issued Date : 2002.02.01 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HSB1386I LOW FREQUENCY TRANSISTOR -20V, -4A Features • Low VCE(sat). VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A) • Excellent DC current gain characteristics.

TL 434

Abstract: y1 marking code transistor HSB1386J
Contextual Info: HI-SINCERITY Spec. No. : HJ200301 Issued Date : 2001.11.30 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HSB1386J LOW FREQUENCY TRANSISTOR -20V, -4A Features • Low VCE(sat). VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A) • Excellent DC current gain characteristics.

2DD2098

Abstract: KP3Q 4A SOT89 MARKING CODE
Contextual Info: 2DB1386Q/R 20V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -20V    IC = -5A high Continuous Current Low saturation voltage VCE sat < -1V @ -4A  Case Material: Molded Plastic, "Green” Molding Compound.  UL Flammability Classification Rating 94V-0