MARKING CODE H10 Search Results

DTC143TE

Abstract: DTC144TSA
Contextual Info: TM Micro Commercial Components DIGITAL TRANSISTORS MCC Part Number Power Dissipation Output Current Supply Voltage Pd mW Io(mA) VCC(V) DC Output Current Voltage Gain Input Input Transistion Frequency Package Polarity Marking Code Internal Diagram Gi Vo(V)

HP 4194A

Abstract: B82422-H1682-K100 marking h100 B82422-H1223-K100 H1102 B82422-H1102-K100 B82422-H1152-K100 B82422-H1222-K100 B82422-H1332-K100 SSB1227-Z
Contextual Info: SMT Inductors, SIMID Series B82422-H*-+100 SIMID 1210-H100 High-current version Size 1210 EIA or 3225 (IEC) Rated inductance 1 to 100 µH Rated current 90 to 650 mA Construction • Ferrite core ■ Laser-welded winding ■ Flame-retardant encapsulation

pcb diagram welding inverter

Abstract: CIRCUIT diagram welding inverter MIXA20W1200MC marking W18 g14 DIODE marking C5 marking diode airconditioning inverter circuit WELDING INVERTER DIAGRAM
Contextual Info: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Preliminary data Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive

Contextual Info: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive temperature coeficient of the on-state

UC320

Abstract: CIRCUIT diagram welding inverter diode K14
Contextual Info: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive temperature coefficient of the on-state

H10N

Abstract: mosfet 650v H10N65
Contextual Info: HI-SINCERITY Spec. No. : MOS200906 Issued Date : 2009.03.23 Revised Date :2009.08.05 Page No. : 1/6 MICROELECTRONICS CORP. H10N65 Series H10N65 Series Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power MOSFET 650V,10A

mosfet 600v 10a to-220ab

Abstract: h10n60 n-CHANNEL POWER MOSFET 600v mosfet vgs 5v RD32 "MOSFET "600V 10A
Contextual Info: HI-SINCERITY Spec. No. : MOS200902 Issued Date : 2009.01.20 Revised Date : 2009.08.05 Page No. : 1/5 MICROELECTRONICS CORP. H10N60 Series H10N60 Series Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power MOSFET 600V,10A

resistencia

Abstract: H1000C1 antenna tower microwave transmitter H1000 marKing del
Contextual Info: Product Datasheet H1000C1 50 Ohm Transmission Rev. 2/ 2005-11-30 2/2 Application Transmission cable is used for low and high power radio frequency RF connections. Examples include radio antenna tower connections, CB and cellular phone antenna connections and

B88069X3820S102

Abstract: A71-H10X
Contextual Info: Surge Arrester 2-Electrode-Arrester A71-H10X Ordering code: B88069X3820S102 DC spark-over voltage 1 2) 1000 ± 15 V % < 1300 < 1200 V V < 1400 < 1300 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs) 10

B88069X3820S102

Abstract: A71-H10X a71h10x B88069-X3820-S102
Contextual Info: Surge Arrester 2-Electrode-Arrester A71-H10X Ordering code: B88069X3820S102 DC spark-over voltage 1 2) 1000 ± 15 V % < 1300 < 1200 V V < 1400 < 1300 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs) 10

A71-H10XG

Abstract: B88069X3880T502
Contextual Info: Surge Arrester 2-Electrode-Arrester A71-H10XG Ordering code: B88069X3880T502 DC spark-over voltage 1 2) 1000 ± 15 V % < 1300 < 1200 V V < 1400 < 1300 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs) 10

Contextual Info: Surge Arrester 2-Electrode-Arrester A71-H10XG Ordering code: B88069X3880T502 DC spark-over voltage 1 2) 1000 ± 15 V % < 1300 < 1200 V V < 1400 < 1300 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs) 10

Contextual Info: Surge Arrester 2-Electrode-Arrester A71-H10XG Ordering code: B88069X3880T502 DC spark-over voltage 1 2) 1000 ± 15 V % < 1300 < 1200 V V < 1400 < 1300 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs) 10

Contextual Info: SMT inductors SIMID series, SIMID 1210-H100 Series/Type: B82422H1*100 Date: October 2012 a~í~=pÜÉÉí ¤ EPCOS AG 2012. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited.

Nichicon VX cap

Abstract: nichicon kl nichicon VX
Contextual Info: n ic k ic o n ALUMINUM ELECTROLYTIC CAPACITORS KL Low L eakage Current series Low Leakage Current Anti-Solvent Feature • Standard low leakage current series. n a n VXI ¡Specifications Item Performance Characteristics Operating Temperature Range —40— b85°C —40— h105'C product also available upon request, but product rated at less than 50V and can size smaller than ¿10X12.5Lmm

Contextual Info: SMT-Induktivitäten SMT Inductors SIMID 1210-H100 SIMID 1210-H100 • Baugröße 1210 EIA bzw. 3225 (IEC) ■ Kernmaterial: Ferrit ■ Size 1210 (EIA) and/or 3225 (IEC) ■ Core material: ferrite Klimakategorie: 55/125/56 Anschlüsse: Bleifrei verzinnt Lötbarkeit:

Contextual Info: UMH10N IMH10A Transistor, digitai, dual, NPN, with 2 resistors Features Dimensions Units : mm • available in UMT6 (UM6) and SMT6 (IMD, SC-74) package • package marking: UMH10N and IMH10A; H10 • • • UMH10N (UMT6) 2.0±0.2 3 U 2 M 1) package contains two independent

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS ET Non-Polarized, Wide Temperature Range ÌP IW series N on -po larized series for operations over wide tem p era tu re range of — 5 5 — h105°C . v p <D ISpecifications Item Performance Characteristics Operating Temperature Range

Contextual Info: HI-SINCERITY Spec. No. : MOS200902 Issued Date : 2009.01.20 Revised Date : Page No. : 1/5 MICROELECTRONICS CORP. H10N60F H10N60F N-Channel Power MOSFET 600V,10A Applications • Switch Mode Power Supply • Uninterruptable Power Supply • High Speed Power Switching

T85 "Rocker Switches" PCB mount

Abstract: 4327030 lamp h4 female ck 66 ul94v-0 "Rocker Switch" DPST illuminated neon 3P ILLUMINATED ROCKER SWITCH marking code h65 marking .H22 T101J1AVBE2 76660
Contextual Info: Rockers Product Selection Guide Rocker 7000 E ET T 9000 DA D Miniature Miniature Subminiature Subminiature Power Rocker & Lever Handle Miniature Power Miniature Power Poles/Throws SPDT, DPDT, 3PDT, 4PDT SPDT, DPDT, 3PDT SPST, SPDT, DPDT SPST, SPDT, DPDT DPDT

H1084 adj

Abstract: 1R2 DIODE H1084U h108433
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1998.06.01 Revised Date : 1999.08.01 Page No. : 1/5 H1084U Series 5A LOW DROPOUT POSITIVE VOLTAGE REGULATOR Features • Low Dropout Voltage 1.2V at 5A • Adjustable or Fixed Voltage.

H1084 adj

Abstract: H1084E h1084
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1998.07.01 Revised Date : 1999.08.01 Page No. : 1/5 H1084E Series 5A LOW DROPOUT POSITIVE VOLTAGE REGULATOR Features • Low Dropout Voltage 1.2V at 5A • Adjustable or Fixed Voltage.

1R2 DIODE

Abstract: H1085 H1085J H1085U capacitor f 3.3j
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1998.06.01 Revised Date : 1999.08.01 Page No. : 1/5 H1085J Series 3A LOW DROPOUT POSITIVE VOLTAGE REGULATOR Features • Low Dropout Voltage 1.2V at 3A • Adjustable or Fixed Voltage

H1085U

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1998.06.01 Revised Date : 1999.08.01 Page No. : 1/5 H1085U Series 3A LOW DROPOUT POSITIVE VOLTAGE REGULATOR Features • Low Dropout Voltage 1.2V at 3A. • Adjustable or Fixed Voltage.