MARKING CODE DIODE EC SMD Search Results
MARKING CODE DIODE EC SMD Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| BLM15PX330BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 33ohm POWRTRN | |||
| BLM15PX600SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 60ohm POWRTRN | |||
| BLM21HE601SN1L | Murata Manufacturing Co Ltd | FB SMD 0805inch 600ohm NONAUTO | |||
| BLM21HE472BH1L | Murata Manufacturing Co Ltd | FB SMD 0805inch 4700ohm POWRTRN | |||
| BLM15PX330SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 33ohm POWRTRN |
MARKING CODE DIODE EC SMD Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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STK and STR integrated circuits
Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
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OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code | |
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Contextual Info: Comchip SMD Super Fast Recovery Rectifiers SMD Diode Specialist SF1005-G Thru. SF1060-G Reverse Voltage: 50 to 600 Volts Forward Current: 10 Amp RoHS Device Features ITO-220AB -Low power loss,high efficiency. -Low power voltage,high current capability. -High surge capacity. |
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SF1005-G SF1060-G ITO-220AB 2002/95/EC MIL-S-19500/228 94-V0 ITO-220AC QW-BS006 SF1005-G EF1005 | |
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Contextual Info: New Product V15P45S Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection Schottky Rectifiers Ultra Low VF = 0.31 V at IF= 5 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology |
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V15P45S J-STD-020, 2002/95/EC 2002/96/EC O-277A 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
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Contextual Info: New Product V15P45S Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection Schottky Rectifiers Ultra Low VF = 0.31 V at IF= 5 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology |
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V15P45S J-STD-020, 2002/95/EC 2002/96/EC O-277A 2002/95/EC. 2011/65/EU. JS709A | |
VISHAY diode MARKING ED
Abstract: marking code diode EC SMD smd diode 86A
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V15P45S J-STD-020, 2002/95/EC 2002/96/EC O-277A 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 VISHAY diode MARKING ED marking code diode EC SMD smd diode 86A | |
byg21m
Abstract: SMD MARKING DIODE CODE EC smd rectifier marking code E3 SMD diode
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BYG21K/BYG21M DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC byg21m SMD MARKING DIODE CODE EC smd rectifier marking code E3 SMD diode | |
AY MARKING 3-PINContextual Info: Philips Semiconductors Product specification General purpose controlled avalanche double diodes BAS29; BAS31 ; BAS35 PINNING FEATURES • Small plastic SMD package • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 90 V |
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BAS29; BAS31 BAS35 BAS29 BAS31; AY MARKING 3-PIN | |
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Contextual Info: Product specification PMV90EN 30 V, single N-channel Trench MOSFET Rev. 1 — 13 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. |
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PMV90EN O-236AB) | |
VISHAY diode MARKING ED
Abstract: V15P45S VISHAY MARKING ED to-277A J-STD-002 "Schottky Diode" SMPC Aluminum PCB
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V15P45S J-STD-020, O-277A 2002/95/EC 2002/96/EC 18-Jul-08 VISHAY diode MARKING ED V15P45S VISHAY MARKING ED to-277A J-STD-002 "Schottky Diode" SMPC Aluminum PCB | |
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Contextual Info: BYG23M Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time • Meets MSL level 1, per J-STD-020C |
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BYG23M J-STD-020C 2002/95/EC 2002/96/EC DO-214AC J-STD-002B JESD22-B102D 08-Apr-05 | |
vishay MARKING UM SMAContextual Info: BYG23M Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time DO-214AC SMA |
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BYG23M DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 vishay MARKING UM SMA | |
BYD24G
Abstract: BYG24D BYG24G
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BYG24D BYG24J J-STD-020C 2002/95/EC 2002/96/EC DO-214AC J-STD-002B JESD22-B102D 08-Apr-05 BYD24G BYG24G | |
BYG24D
Abstract: BYG24G
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BYG24D BYG24J DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 BYG24G | |
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Contextual Info: New Product S5MS Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability |
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J-STD-020, 2002/95/EC 2002/96/EC DO-214AB 94trademarks 2011/65/EU 2002/95/EC. 2011/65/EU. | |
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Contextual Info: BYG21K & BYG21M Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristic • Fast reverse recovery time |
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BYG21K BYG21M J-STD-020C 2002/95/EC 2002/96/EC DO-214AC J-STD-002B JESD22-B102D 08-Apr-05 | |
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Contextual Info: BYG23M Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time • Meets MSL level 1, per J-STD-020, LF maximum |
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BYG23M DO-214AC J-STD-020, 2002/95/EC 2002/96/EC J-STD-002 08-Apr-05 | |
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Contextual Info: BYG21K & BYG21M Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristic • Fast reverse recovery time |
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BYG21K BYG21M DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 | |
BYG24D
Abstract: BYG24J JESD22-B102D J-STD-002B 175KW BYG24G
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BYG24D BYG24J DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 BYG24J JESD22-B102D J-STD-002B 175KW BYG24G | |
BYG23M
Abstract: JESD22-B102D J-STD-002B TR3 Marking
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BYG23M DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 BYG23M JESD22-B102D J-STD-002B TR3 Marking | |
BYG24D
Abstract: BYG24G
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BYG24D BYG24J DO-214AC J-STD-020, 2002/95/EC 2002/96/EC 08-Apr-05 BYG24G | |
BYG22A, DO214ACContextual Info: BYG22A thru BYG22D Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Low forward voltage • Soft recovery characteristic |
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BYG22A BYG22D DO-214AC J-STD-020C 2002/95/EC 2002/96/EC 08-Apr-05 BYG22A, DO214AC | |
BYD20G
Abstract: byd20
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BYG20D BYG20J J-STD-020C 2002/95/EC 2002/96/EC DO-214AC J-STD-002B JESD22-B102D 08-Apr-05 BYD20G byd20 | |
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Contextual Info: BYG10D thru BYG10Y Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current • High surge current capability |
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BYG10D BYG10Y J-STD-020C 2002/95/EC 2002/96/EC DO-214AC J-STD-002B JESD22-B102D 08-Apr-05 | |
vishay MARKING UM SMA
Abstract: smd code marking e3 BYG10D BYG10D-BYG10M BYG10Y JESD22-B102D J-STD-002B
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BYG10D BYG10Y DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 vishay MARKING UM SMA smd code marking e3 BYG10D-BYG10M BYG10Y JESD22-B102D J-STD-002B | |