MARKING CODE DIODE 2U Search Results

igbt welding machine scheme

Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and

Contextual Info: Comchip SMD ESD Protection Diode SMD Diode Specialist CPDU3V3UP RoHS Device Features 0603/SOD-523F - Working voltage: 3.3V 0.071 1.80 0.063(1.60) - Low leakage current. - Low operating and clamping voltages. 0.039(1.00) 0.031(0.80) Mechanical data - Case: 0603/SOD-523F standard package,

Contextual Info: PD - 95848C IRLR2905Z IRLU2905Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features n n n n n n Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 13.5mΩ

Contextual Info: Transient Voltage Suppression Diodes Surface Mount > 3.0SMC series 3.0SMC Series RoHS Description TVS Diode Arrays SPA Family of Products Uni-directional The 3.0SMC series is designed specifically to protect sensitive electronic equipment from voltage transients

FSL3206

Contextual Info: IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G Benefits l Improved Gate, Avalanche and Dynamic

irfb3306

Abstract: FS3306
Contextual Info: IRFB3306PbF IRFS3306PbF IRFSL3306PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: IRFH7932PbF HEXFET Power MOSFET Applications Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems l l VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits Very low RDS(ON) at 4.5V VGS

Contextual Info: SMD ESD Protection Diode CPDH3V3UP-HF RoHS Device Halogen Free SOD-523 Features 0.008 0.20 REF 0.051(1.30) 0.043(1.10) -IEC61000-4-2 Level 4 ESD protection. -Working voltage: 3.3V -Low leakage current. -Low operating and clamping voltages. 0.014(0.35) 0.010(0.25)

Contextual Info: SMD ESD Protection Diode CPDV5-3V3UP RoHS Device Features -IEC61000-4-2 Level 4 ESD protection. SOT-353 -Working voltage: 3.3V 0.087 2.20 0.079(2.00) -Low leakage current. -Low operating and clamping voltages. 0.053(1.35) 0.045(1.15) Mechanical data -Case: SOT-353 standard package ,molded plastic.

Contextual Info: IRFH7934PbF HEXFET Power MOSFET Applications l l VDSS 30V Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC RDS on max Qg 3.5m @VGS = 10V 20nC : Converters in Networking Systems Benefits l l l l l

Contextual Info: SMD ESD Protection Diode CPDH3V3UP-HF RoHS Device Halogen Free Features SOD-523 -IEC61000-4-2 ESD ±15kV(Contact),±20kV(Air). -Working voltage: 3.3V -Low leakage current. -Low operating and clamping voltages. 0.008(0.20) REF 0.051(1.30) 0.043(1.10) 0.033(0.85)

Contextual Info: SMD ESD Protection Diode CPDH3V3UP RoHS Device Features -IEC61000-4-2 ESD ±15kV(Contact), ±20kV(Air). SOD-523 -Working voltage: 3.3V -Low leakage current. 0.008(0.20) 0.051(1.30) 0.043(1.10) REF -Low operating and clamping voltages. 0.033(0.85) 0.030(0.75)

Contextual Info: SMD ESD Protection Diode CPDH3V3UP RoHS Device Features SOD-523 -IEC61000-4-2 Level 4 ESD protection. 0.008 0.20 REF 0.051(1.30) 0.043(1.10) -Working voltage: 3.3V 0.014(0.35) 0.010(0.25) -Low leakage current. 0.033(0.85) 0.030(0.75) -Low operating and clamping voltages.

MOSFET IRF 630 Datasheet

Abstract: transistor IRF 630 IRF3805 IRF3805L IRF3805S
Contextual Info: PD - 95880C IRF3805 IRF3805S IRF3805L AUTOMOTIVE MOSFET Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 3.3mΩ

IRFB3306PBF

Abstract: IRFB3306 AN-994
Contextual Info: PD - 97098A IRFB3306PbF IRFS3306PbF IRFSL3306PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: PD - 95880C IRF3805 IRF3805S IRF3805L AUTOMOTIVE MOSFET Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 3.3mΩ

irfb3306

Abstract: IRFS3306PbF IRFB3306PBF AN-994
Contextual Info: PD - 97098B IRFB3306PbF IRFS3306PbF IRFSL3306PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt

irf 210a

Abstract: IRF 120A IRF 840 MOSFET irf 210 mosfet IRF 504 irf 840 if IRF 150a IRFB3206 smps 48v 12v irf 48v mosfet
Contextual Info: PD - 97097B IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt

irf 210 mosfet

Abstract: IRFB3206 AN-994 IRF 150a IRF 840 MOSFET irf 1040
Contextual Info: PD - 97097A IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt

IRF 840 MOSFET

Abstract: IRF 120A irf 210 mosfet irf 840 if irf 210a IRF 150a AN-994 97097B
Contextual Info: PD - 97097B IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt

IRF3805LPBF

Abstract: AN-1005 IRF3805 IRF3805PBF
Contextual Info: PD - 97046A IRF3805PbF IRF3805SPbF IRF3805LPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D

Contextual Info: PD - 97098B IRFB3306PbF IRFS3306PbF IRFSL3306PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: PD - 97098A IRFB3306PbF IRFS3306PbF IRFSL3306PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
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