MARKING CODE CGK Search Results

Contextual Info: FS01 SENSITIVE GATE SCR On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 400 V ÷ 600 V TO-92 FS01xxxA FEATURES • Glass/passivated die junctions SOT-223 (FS01xxxN) K G A A K SOT23-3L A G • Low current SCR • Low thermal resistance

Contextual Info: FS01 SENSITIVE GATE SCR On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 400 V ÷ 600 V TO-92 FS01xxxA FEATURES • Glass/passivated die junctions SOT-223 (FS01xxxN) K G A A K SOT23-3L A G • Low current SCR • Low thermal resistance

MARKING CODE CGK

Abstract: FS0402
Contextual Info: FS04.A SENSITIVE GATE SCR On-State Current Gate Trigger Current 4 Amp < 200 µA Off-State Voltage 200 V ÷ 800 V TO92 FEATURES • Glass/passivated die junctions 2 3 • Low current SCR • Low thermal resistance • High surge current capability • Low forward voltage drop

BUK 155

Abstract: 470 CFK BPM T 105 94V-0 MARKING CFK SMA33CA marking cvk Marking code AHm marking code CVK rkm 22 SMA17
Contextual Info: SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS REVERSE VOLTAGE FORWARD CURRENT FEATURES - 6.8 to 200 VOLTS - 400 Amperes SMA Rating to 200V VBR For surface mounted applications Reiiable low cost construction utilizing molded plastic technique

BUK 155

Abstract: BYM 268 470 CFK byk 306 SMA33CA BPM T 105 94V-0 MARKING CMK LS BMK SMA12CA bhk 115
Contextual Info: SURF ACE MOUNT UNIDIREC TIONAL AND BIDIRECT IONAL TRANSIE NT V OLTA GE S UPPRESS ORS REVERSE VOLTAGE - 6.8 to 200 VOLTS FORWARD CURRENT - 400 Amperes FEATURES Rating to 200V VBR For surface mou nted applications Reiiable low cost construction utilizing molded plastic te chnique

Contextual Info: LITE ON POWER SEMICONDUCTOR SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS SMA SERIES STAND-OFF VOLTAGE - 6.8 to 200 Volts POWER DISSIPATION - 400 WATTS FEATURES Rating to 200V VBR For surface mounted applications Reliable low cost construction utilizing molded plastic

chm - 1 94V - 0

Abstract: BUK 155 CEM - 1 94V - 0 marking CYK cnm 778 RHK 117 103 csk marking code rpk marking code CFK SMA18CA
Contextual Info: SMA Series 400Watts Surface Mount Transient Voltage Suppressor STAND-OFF VOLTAGE - 6.8 to 200 Volts POWER DISSIPATION - 400 WATTS SMA/DO-214AC Features — Rating to 200V VBR — For surface mounted applications — Reliable low cost construction utilizing molded plastic

marking code CVK

Abstract: marking cvk MARKING rkm rkm 22 marking code cfk BUK 155 rkm 24 SMA150CA marking code CTK AXK marking
Contextual Info: LITE-ON SEMICONDUCTOR SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS SMA SERIES STAND-OFF VOLTAGE - 6.8 to 200 Volts POWER DISSIPATION - 400 WATTS FEATURES Rating to 200V VBR For surface mounted applications Reliable low cost construction utilizing molded plastic

Contextual Info: FS02.N SENSITIVE GATE SCR On-State Current Gate Trigger Current 1.25 Amp < 200 µA Off-State Voltage 400 V ÷ 800 V TO-261AA SOT-223 FEATURES • Glass/passivated die junctions • Low current SCR • Low thermal resistance • High surge current capability

Contextual Info: FS04.K SENSITIVE GATE SCR On-State Current Gate Trigger Current 4 Amp < 200 µA Off-State Voltage 400 V ÷ 800 V TO-225AA TO-126 K FEATURES • Glass/passivated die junctions • Low current SCR • Low thermal resistance • High surge current capability

fs0402dk

Abstract: FS0402
Contextual Info: FS04.K SENSITIVE GATE SCR On-State Current Gate Trigger Current 4 Amp < 200 µA Off-State Voltage 400 V ÷ 800 V TO-225AA TO-126 K FEATURES • Glass/passivated die junctions • Low current SCR • Low thermal resistance • High surge current capability

e1 marking

Abstract: FS0102DL 1CGK
Contextual Info: FS01.L SENSITIVE GATE SCR On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 200 V ÷ 600 V SOT23-3L FEATURES • Glass/passivated die junctions • Low current SCR • Low thermal resistance • High surge current capability • Low forward voltage drop

1CGK

Abstract: FS0102DL
Contextual Info: FS01.L SENSITIVE GATE SCR On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 200 V ÷ 600 V SOT23-3L FEATURES • Glass/passivated die junctions • Low current SCR • Low thermal resistance • High surge current capability • Low forward voltage drop

Contextual Info: FS0802.H SENSITIVE GATE SCR On-State Current Gate Trigger Current 8 Amp < 200 µA Off-State Voltage 400 V ÷ 800 V TO-220-AB FEATURES • Glass/passivated die junctions KA • Low current SCR • Low thermal resistance • High surge current capability • Low forward voltage drop

F5G49

Abstract: MARKING CODE CGK USF5G49 rgk 13 1 11 005 01 F5J49 AV1610 K4010 USF5J49 SF5J49 marking cgk
Contextual Info: SF5G49, SF5J49, USF5G49, USF5J49 TOSHIBA Thyristor Silicon Planar Type SF5G49, SF5J49, USF5G49, USF5J49 Medium Power Control Applications Unit: mm • Repetitive peak off-state voltage: VDRM = 400V, 600 V • Average on-state current: IT AV = 5 A • Gate trigger current: IGT = 70 µA max

BF1108_BF1108R

Abstract: BF1108_1108R_3 MARKING CODE CGK BF1108 BF1108R
Contextual Info: BF1108; BF1108R Silicon RF switches Rev. 04 — 29 May 2008 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The

F5G49

Abstract: MARKING CODE CGK F5J49 SF5G49 SF5J49 USF5G49 USF5J49
Contextual Info: SF5G49, SF5J49, USF5G49, USF5J49 TOSHIBA Thyristor Silicon Planar Type SF5G49, SF5J49, USF5G49, USF5J49 Medium Power Control Applications Unit: mm • Repetitive peak off-state voltage: VDRM = 400V, 600 V • Average on-state current: IT AV = 5 A • Gate trigger current: IGT = 70 µA max

P0118

Abstract: P1M marking code sot 223
Contextual Info: P011xx Sensitive high immunity SCRs up to 0.8 A Features A • IT RMS up to 0.8 A ■ VDRM/VRRM 400 and 600 V ■ IGT from 0.5 to 25 µA G K Description A Thanks to highly sensitive triggering levels, the P011xx SCR series is suitable for all applications

p0115 st

Abstract: p0115 scr P1M marking code sot 223 P0115 P0115DA SCR P0115 MARKING CODE CGK sot-223 rth P0111 P0118DA
Contextual Info: P011xx Sensitive high immunity SCRs up to 0.8 A Features A • IT RMS up to 0.8 A ■ VDRM/VRRM 400 and 600 V ■ IGT from 0.5 to 25 µA G K Description A Thanks to highly sensitive triggering levels, the P011xx SCR series is suitable for all applications

F5G49

Contextual Info: SF5G49, SF5J49, USF5G49, USF5J49 TOSHIBA Thyristor Silicon Planar Type SF5G49, SF5J49, USF5G49, USF5J49 Medium Power Control Applications Unit: mm • Repetitive peak off-state voltage: VDRM = 400V, 600 V • Average on-state current: IT AV = 5 A • Gate trigger current: IGT = 70 µA max

Contextual Info: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 3 — 14 November 2014 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are

Contextual Info: MCR8SD, MCR8SM, MCR8SN Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors http://onsemi.com Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever

mcr8sm

Abstract: MCR8SD
Contextual Info: MCR8SD, MCR8SM, MCR8SN Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors http://onsemi.com Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever

BF1118

Abstract: BF1118R BF1118WR DIODE marking S4 06 MARKING CODE CGK
Contextual Info: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 1 — 29 June 2010 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are