MARKING CODE C7F Search Results

Contextual Info: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160BVHE-BTL90 Flash Memory 16M 2M x8/1M x 16 (Model No.: LHF16V11) Spec No.: EL10Y079A Issue Date: September 8, 1999 LHF16Vll l Handle this document carefully for it contains material protected by international copyright law.

LH28F160BVHE-BTL90

Abstract: C8000 BTL90 SHARP 20 WZ 51
Contextual Info: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160BVHE-BTL90 Flash Memory 16M 2M x8/1M x 16 (Model No.: LHF16V11) Spec No.: EL10Y079A Issue Date: September 8, 1999 LHF16Vll l Handle this document carefully for it contains material protected by international copyright law.

38LM MARKING

Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160BVE-BTL90 Flash Memory 16M 2M x 8/1M × 16 (Model No.: LHF16V09) Spec No.: EL10Y075A Issue Date: September 7, 1999 SHARB= LHFl6V09 l Handle this document carefully for it contains material protected by international copyright law.

MARKING C7K

Abstract: marking c7 sot-23 marking code C7F
Contextual Info: SN74LVC1G17 www.ti.com SCES351T – JULY 2001 – REVISED NOVEMBER 2012 SINGLE SCHMITT-TRIGGER BUFFER Check for Samples: SN74LVC1G17 FEATURES 1 • 2 • • • • • • • Available in the Texas Instruments NanoFree Package Supports 5-V VCC Operation

Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160BVE-BTL90 Flash Memory 16M 2M x 8/1M × 16 (Model No.: LHF16V09) Spec No.: EL10Y075A Issue Date: September 7, 1999 SHARB= LHFl6V09 l Handle this document carefully for it contains material protected by international copyright law.

FY220

Abstract: FW221 EM28C1602C3FL
Contextual Info: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM28C1602C3FL Advance Information EM28C1602C3FL Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View

ES651

Abstract: EM28C1604C3FL
Contextual Info: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM28C1604C3FL Advance Information EM28C1604C3FL Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View

AM29F040B date code marking information

Abstract: AM29F040B PART MARKING marking CODE SA2 marking AM29F040B SA29 170000H Am29LV200BB sa29 pinout 00000H Am29LV002T
Contextual Info: ExpressFlashTM Code Approval Form Section 1: CODE TRANSMITTAL AND ORDERING INFORMATION SECTION Date _ CUSTOMER INFORMATION 1. Company Name _ 2. Customer Contact Name _ 3. Contact’s Phone No. _ 4. AMD Salesperson _

MT28F160A3

Abstract: FW310 FW311
Contextual Info: ADVANCE 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 Low Voltage, Extended Temperature FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks • VCC, VCCQ and VPP voltages:

MT28F160A3

Contextual Info: ADVANCE‡ 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 Low Voltage, Extended Temperature FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks

Contextual Info: ADVANCE 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 Low Voltage, Extended Temperature FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks • VCC, VCCQ and VPP voltages:

TOP SIDE MARKING m03

Abstract: FPT-48P-M19 FPT-48P-M20 SA10 SA11 SA12 SA13
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-90/-12/MBM29LV160B-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

C8000H

Contextual Info: ADVANCE‡ 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 Low Voltage, Extended Temperature FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks

FW310

Abstract: FW311 fy310 FX312 FX310
Contextual Info: ADVANCE 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 Low Voltage, Extended Temperature FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks • VCC, VCCQ and VPP voltages:

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

BGA-48P-M13

Abstract: FPT-48P-M19 FPT-48P-M20 SA10 SA11 SA12
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements

AMD 754

Abstract: BGA-48P-M13 FPT-48P-M19 FPT-48P-M20 SA10 SA11 SA12
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

fw610

Abstract: CSM 8A Code TRS-150 sample code read the flash memory manufacture id MT28F160C3 MARK SR1
Contextual Info: ADVANCE‡ 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C3 Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT Top View 46-Ball FBGA • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks

Contextual Info: ADVANCE‡ 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C3 Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT Top View 46-Ball FBGA • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks

fw610

Contextual Info: ADVANCE 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C3 Low Voltage, Extended Temperature FEATURES PIN ASSIGNMENT Top View 46-Pin FBGA • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks

fw610

Abstract: MT28F160C3FD-9 BET TRS-150 MT28F160C3 TOP SIDE MARKING OF MICRON micron flash otp
Contextual Info: ADVANCE 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C3 Low Voltage, Extended Temperature FEATURES PIN ASSIGNMENT Top View 46-Pin FBGA • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE -70/90/12 • FEATURES • 0.23 µm Process Technology • Single 3.0 V read, program and erase Minimizes system level power requirements

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE -70/90/12 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA

MBM29LV160BB

Contextual Info: FLASH MEMORY 16 M 2 M x 8 / 1 M x 16 BIT CMOS M B M 2 9 L V 1 6 0 T - 9 0 / - 1 0 /-1 2 / M B M 2 9 L V 1 6 O B -90/-1 0 /-1 2 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands