MARKING CODE BOX SOT23 Search Results

Contextual Info: A Product Line of Diodes Incorporated APT17 480V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 480V   BVCES > 700V   BVEBO > 10V Case: TO92 or SOT23 Case Material: Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0

ST 9340

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PSSI3120CA PECL termination Product specification 2001 Jul 19 Philips Semiconductors Product specification PECL termination PSSI3120CA PINNING - SOT23 FEATURES • Single channel PECL termination in a three pin SOT23

Contextual Info: DTA114EM/EE/EUA/ECA/ESA Taiwan Semiconductor Small Signal Product PNP Digital Transistor FEATURES - Built-in bias resistors enable the configuration of SOT523 /SOT323/SOT23 an inverter circuit without connecting external input resistor see equivalent circuit .

Contextual Info: Product specification PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

5630 SOT23

Abstract: FDN5630
Contextual Info: FDN5630 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23

transistor c143

Abstract: C143 Transistor ze 003 ic ZUA SOT23 ze 003 zua SOT-23 ZE SOT-23 marking CODE ZUA SOT23
Contextual Info: DTC143 ZM/ZE/ZUA/ZCA/ZSA Taiwan Semiconductor Small Signal Product PNP Small Signal Transistor FEATURES - Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor SOT523/SOT323/SOT23 see equivalent circuit

5630 PKG

Abstract: 5630 SOT23 marking code 10 sot23 FDN5630
Contextual Info: FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23

5630 PKG

Abstract: FDN5630 sot23 footprint
Contextual Info: FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23

BAS16WS-V

Abstract: BAS16WS-V-GS08 BAS16
Contextual Info: BAS16WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon epitaxial planar diode • Fast switching diode e3 • Also available in case SOT23 with designation BAS16 • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC

1N4148WS-V

Abstract: 1N4148WS-V-GS08 1N4148WS-V-GS18 1n4148ws SOT23 DIODE marking CODE AV 1N4148 DO35 IMBD4148-V LL4148 1n4148ws a2
Contextual Info: 1N4148WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • These diodes are also available in other case styles including the DO35 case e3 with the type designation 1N4148, the MiniMELF case with the type designation LL4148, and the SOT23 case with the

1N4148W-V

Abstract: 1N4148W-V-GS18 1N4148W-V-GS08 1N4148 MARKING A2 CASE-SOD-123 1N4148 DO35 IMBD4148-V LL4148 1N4148 sod123
Contextual Info: 1N4148W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • These diodes are also available in other case styles including the DO35 case with the type designation 1N4148, the e3 MiniMELF case with the type designation LL4148, and the SOT23 case with the

MARKING SMD PNP TRANSISTOR R 172

Abstract: SMD TRANSISTOR MARKING km SMD TRANSISTOR MARKING CODE YR TRANSISTOR SMD MARKING CODE SP transistor smd YR marking code YS SMD 2PA1774JQ YQ TRANSISTOR SMD MARKING CODE al 2PA1774JS SMD transistor MARKING CODE 43
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PA1774J PNP general purpose transistor Product specification Supersedes data of 1999 May 04 2000 Dec 12 Philips Semiconductors Product specification PNP general purpose transistor 2PA1774J PINNING FEATURES • Power dissipation comparable to SOT23

Contextual Info: PJUSB05-4 SOT23-6L FEATURES Unit：inch mm • SOT23-6L package allows five separate unidirectional configurations • Low leakage < 1µA@5V 0.119(3.00) 0.110(2.80) • Breakdown voltage : 6.37V-7.04V@1mA • Low Capacitance (8.5pF typical) • ESD Protection Meeting IEC1000-4-2

Contextual Info: PJUSB05-4 SOT23-6L FEATURES Unit：inch mm • SOT23-6L package allows five separate unidirectional configurations • Low leakage < 1 µA@5V 0.119(3.00) 0.110(2.80) • Breakdown voltage : 6.37V-7.04V@1mA 0.009(0.22) 0.003(0.08) 0.067(1.70) 0.059(1.50) • ESD Protection Meeting IEC1000-4-2

Contextual Info: TMP100−EP DIGITAL TEMPERATURE SENSOR WITH I2C INTERFACE SGLS254B − JULY 2005 − REVISED OCTOBER 2013 D Controlled Baseline D Low Quiescent Current: 45 mA, 0.1-mA D D Wide Supply Range: 2.7 V to 5.5 V D Small SOT23-6 Package D D D D D † − One Assembly/Test Site, One Fabrication

Contextual Info: PJESD5V6LC-4~PJESD6V8LC-4 SOT23-5L FEATURES Unit：inch mm • Based on the electrostatic discharge immunity test (IEC61000-4-2), the product assures the minmum endurance of 8kV. • Capacitance is small with 10pF (at V R =0V,f=1MHz) between the 0.119(3.00)

Contextual Info: TMP100−EP DIGITAL TEMPERATURE SENSOR WITH I2C INTERFACE SGLS254B − JULY 2005 − REVISED OCTOBER 2013 D Controlled Baseline D Low Quiescent Current: 45 mA, 0.1-mA D D Wide Supply Range: 2.7 V to 5.5 V D Small SOT23-6 Package D D D D D † − One Assembly/Test Site, One Fabrication

MARKING tAN SOT-23

Abstract: AAD SOT-143
Contextual Info: AC Terminator Quad Common Applications • AC termination ■ Reduce transmission line effects ■ Clock line and constant data rate line termination ■ Low pass filter ■ Power supply filter Electrical Characteristics E Resistance Range. . . . . . 10Ω to 10KΩ

transistor AY PNP smd

Abstract: marking code RAD SMD Transistor npn ph TRANSISTOR SMD MARKING CODE A65 smd transistor smd transistor JE MARKING SMD pnp TRANSISTOR ec smd transistor NG TRANSISTOR SMD MARKING CODE ad smd transistor GY smd transistor code SG
Contextual Info: DISCRETE SEMICONDUCTORS Preliminary specification Supersedes data of 1998 Nov 11 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EEF FEATURES PINNING • Power dissipation comparable to SOT23

Contextual Info: MMBD3004BRM SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE ARRAY This device features two series-connected diode pairs which can be connected to form a full-wave bridge. It is housed in a very small SOT23-6L surface mount package. SOT23-6L FEATURES 4 5 High Reverse Voltage Rating

b34 surface mount

Contextual Info: MMBD3004BRM SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE ARRAY This device features two series-connected diode pairs which can be connected to form a full-wave bridge. It is housed in a very small SOT23-6L surface mount package. SOT23-6L FEATURES 4 5 High Reverse Voltage Rating

Contextual Info: MMBD3004BRM SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE ARRAY This device features two series-connected diode pairs which can be connected to form a full-wave bridge. It is housed in a very small SOT23-6L surface mount package. SOT23-6L FEATURES 4 5 High Reverse Voltage Rating

varicap diode

Abstract: bb814
Contextual Info: BB814 Vishay Semiconductors Dual Varicap Diode FEATURES 3 • Silicon epitaxial planar diode • Common cathode • AEC-Q101 qualified 1 2 18108 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC MECHANICAL DATA APPLICATIONS Case: SOT23

st smd diode marking code VU

Abstract: SMD diode sg 46 sot23 smd code ng AVN marking SMD smd code marking PE sot23
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Oct 24 Philips Sem iconductors 1999 Apr 28 PHILIPS Philips Semiconductors Product specification Schottky barrier double diodes FEATURES BAS40 series PINNING SOT23 (see Fig. 1a) • Low forward voltage