MARKING CODE B2 MOSFET SOT23 Search Results

DMN62D1SFB

Contextual Info: DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCE INFORMATION 60V Features and Benefits 2 RDS(on) Max ID Max @ TA = +25°C • Footprint of just 0.6mm – thirteen times smaller than SOT23  Low On-Resistance 1.4 @ VGS= 10V

DMN62D1SFB

Contextual Info: DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on Max ID Max @ TA = +25C • Footprint of just 0.6mm – thirteen times smaller than SOT23  Low On-Resistance 1.4 @ VGS= 10V 0.41A  Low Gate Threshold Voltage 1.6 @ VGS= 4.5V

Contextual Info: A Product Line of Diodes Incorporated DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -20V Features and Benefits RDS(on) ID @ TA = 25°C 495mΩ @ VGS = -4.5V -0.77A 690mΩ @ VGS = -2.5V -0.67A 960mΩ @ VGS = -1.8V -0.57A 2 Footprint of just 0.6mm – thirteen times smaller than SOT23

Contextual Info: A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • 0.4mm ultra low profile package for thin application 0.9A   0.6mm package footprint, 10 times smaller than SOT23 Low VGS th , can be driven directly from a battery

Contextual Info: A Product Line of Diodes Incorporated DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -20V Features and Benefits RDS(on) ID @ TA = 25°C 495mΩ @ VGS = -4.5V -0.77A 690mΩ @ VGS = -2.5V -0.67A 960mΩ @ VGS = -1.8V -0.57A 2 Footprint of just 0.6mm – thirteen times smaller than SOT23

Contextual Info: REV. 1.0 FS361-DS-10_EN Datasheet FS361 One Cell Lithium-ion/Polymer Battery Protection IC Mar. 2007 FS361 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742

Contextual Info: A Product Line of Diodes Incorporated DMN2300UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) 20V 175mΩ @ VGS= 4.5V 240mΩ @ VGS= 2.5V 360mΩ @ VGS= 1.8V • • • • • • • • ID max TA = 25°C (Notes 4)

Contextual Info: A Product Line of Diodes Incorporated DMN2300UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) 20V 175mΩ @ VGS = 4.5V 240mΩ @ VGS = 2.5V 360mΩ @ VGS = 1.8V • • • • • • • • ID max TA = 25°C

DMN62D1SFB

Contextual Info: A Product Line of Diodes Incorporated DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V BR DSS Features and Benefits RDS(on) Max ID Max @ TA = 25°C 1.4Ω @ VGS= 10V 0.41A 1.6Ω @ VGS= 4.5V 0.38A 60V Description and Applications

DFN1006H4-3

Abstract: DMN2300UFB4 DMN2300UFB4-7B dmn2300u
Contextual Info: A Product Line of Diodes Incorporated DMN2300UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) 20V 175mΩ @ VGS = 4.5V 240mΩ @ VGS = 2.5V 360mΩ @ VGS = 1.8V • • • • • • • • ID max TA = 25°C

Contextual Info: LTC4280 Hot Swap Controller with 2 I C Compatible Monitoring FEATURES n n n n n n n n n n n n DESCRIPTION Allows Safe Insertion into Live Backplane 8-Bit ADC Monitors Current and Voltage I2C/SMBus Interface Wide Operating Voltage Range: 2.9V to 15V Adjustable Overcurrent Filter Time

FDC653N

Abstract: LTC4280 LTC4280C LTC4280CUFD LTC4280I P6KE16A lt 4280
Contextual Info: LTC4280 Hot Swap Controller with 2 I C Compatible Monitoring FEATURES DESCRIPTION n The LTC 4280 Hot Swap controller allows a board to be safely inserted and removed from a live backplane. Using an external N-channel pass transistor, board supply voltage

DMN3730

Contextual Info: DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance

Contextual Info: DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance

DFN1006-3

Abstract: DMN2300UFB DMN2300UFB-7 DMN2300UFB-7B
Contextual Info: A Product Line of Diodes Incorporated DMN2300UFB 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) 20V 175mΩ @ VGS= 4.5V 240mΩ @ VGS= 2.5V 360mΩ @ VGS= 1.8V • • • • • • • • • ID max TA = 25°C

DFN1006H4-3

Abstract: DMN3730UFB4 DMN3730UFB4-7
Contextual Info: A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data

DMN62D1SFB

Contextual Info: A Product Line of Diodes Incorporated DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADV AN CE I N FORM AT I ON V BR DSS Features and Benefits RDS(on) Max ID Max @ TA = 25°C 1.4Ω @ VGS= 10V 0.41A 1.6Ω @ VGS= 4.5V 0.38A 60V Description and Applications

Contextual Info: A Product Line of Diodes Incorporated DMN2300UFB 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) 20V 175mΩ @ VGS= 4.5V 240mΩ @ VGS= 2.5V 360mΩ @ VGS= 1.8V • • • • • • • • • ID max TA = 25°C

dmn3730ufb4

Contextual Info: A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data

DFN1006-3

Contextual Info: A Product Line of Diodes Incorporated DMP21D0UFB 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max V BR DSS RDS(on) Max @ TA = 25°C (Note 4) -20V 495mΩ @ VGS = -4.5V -0.77A 690mΩ @ VGS = -2.5V -0.67A 960mΩ @ VGS = -1.8V

marking P6

Contextual Info: A Product Line of Diodes Incorporated DMP31D0UFB4 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -30V Features and Benefits • • • • • • • • Max ID Max RDS(on) @ TA = 25°C 1Ω @ VGS = -4.5V -0.76A 1.5Ω @ VGS = -2.5V -0.62A

Contextual Info: A Product Line of Diodes Incorporated DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -20V Features and Benefits RDS(on) ID @ TA = 25°C 400mΩ @ VGS = -4.5V -0.8A 600mΩ @ VGS = -2.5V -0.65A 900mΩ @ VGS = -1.8V -0.56A • • •

DMN3730

Abstract: DFN1006-3 DMN3730UFB DMN3730UFB-7 MARKING NE
Contextual Info: A Product Line of Diodes Incorporated DMN3730UFB 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data

Contextual Info: A Product Line of Diodes Incorporated DMP31D0UFB4 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -30V Features and Benefits • • • • • • • • Max ID Max RDS(on) @ TA = 25°C 1Ω @ VGS = -4.5V -0.76A 1.5Ω @ VGS = -2.5V -0.62A