HSMS-285x model
Abstract: HSMS-285X marking code e6 sot363 AN1124 HSMS-2850 SOT143 Marking A1 PIN DIODE MARKING CODE AB SOT Packaged A1 4 PIN sot-23 Marking B1 HSMS-286* reliability
Contextual Info: Products > RF ICs/Discretes > Schottky Diodes > Demonstration Circuit Boards > DEMO-HSMS285-0 DEMO-HSMS285-0 Demonstration circuit board for HSMS-2850, HSMS-2852 and HSMS-2855 Description Lifecycle status: Active Features 2.45 GHz TAG circuit using the HSMS-2850 zero bias Schottky diode
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demo-hsms285-0hsms-2850hsms-2852hsms-2855+11ot-23ot-143hsms-285x modelhsms-285xmarking code e6 sot363an1124sot143 marking a1pin diode marking code absot packaged a1 4 pinsot-23 marking b1hsms-286* reliability
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V = Device Code
Contextual Info: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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mc74vhc1g02353/scv = device code |
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marking CODE W2D
Abstract: marking w2d
Contextual Info: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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mc74vhc1g126353/scmarking code w2dmarking w2d |
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V = Device Code
Abstract: GATE MARKING CODE VX SOT23 AND8004 AND8004/D
Contextual Info: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT50 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS
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mc74vhc1gt50v = device codegate marking code vx sot23and8004+1and8004/d
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diode Marking code v3
Abstract: sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 MC74HC1G14
Contextual Info: MC74HC1G14 Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt–Trigger input fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.
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mc74hc1g14mc74hc353/scdiode marking code v3+6sot 23-5 marking code h5v = device codemarking h5 sot 23-5wafer fab plant codes stfairchild mosxaa64
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V = Device Code
Abstract: MC74VHC1G00
Contextual Info: MC74VHC1G00 2-Input NAND Gate The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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mc74vhc1g00353/scv = device code |
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marking code ER sot 143
Abstract: HSMS-2827 SCHOTTKY DIODE SOT-143 AN1124 HSMS-286 marking cross ref sot-143 HSMS-2822 variable power divider 282P HSMS-28
Contextual Info: HSMS-282x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give
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hsms-282xhsms282xot-323sc70-3+16ot-363sc70-6hsms-282x-tr2ghsms-282x-tr1ghsms-282x-blkg5989-4030enmarking code er sot 143hsms-2827schottky diode sot-143an1124hsms-286marking cross ref sot-143hsms-2822variable power divider282phsms-28
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variable power divider
Abstract: marking code C9 282P HSMS-282K common base mixer circuit analysis marking cross ref sot-143 hsms2822 schottky diode limiter application note
Contextual Info: HSMS-282x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give
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hsms-282xhsms282xot-323sc70-3+13ot-363sc70-6hsms-282x-tr2ghsms-282x-tr1ghsms-282x-blkg5989-4030envariable power dividermarking code c9282phsms-282kcommon base mixer circuit analysismarking cross ref sot-143hsms2822 schottky diode limiter application note
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Wafer Fab Plant Codes ST
Abstract: V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08
Contextual Info: MC74HC1G32 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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mc74hc1g32mc74hc353/scwafer fab plant codes st+8v = device codet138-amarking 563 fairchildalpha new year date codemarking t132marking sbndiode m7 smphep08
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V = Device Code
Abstract: diode Marking code v3 on semi aa sot353 TOREX TOP CODE
Contextual Info: MC74VHC1GT32 2-Input OR Gate/CMOS Logic Level Shifter The MC74VHC1GT32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining
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mc74vhc1gt32v = device codediode marking code v3 on semiaa sot353+1torex top code
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PC 74 HCT 32 P
Abstract: U-046 V = Device Code
Contextual Info: MC74VHC1G01 2-Input NAND Gate with Open Drain Output The MC74VHC1G01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low
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mc74vhc1g01pc 74 hct 32 pu-046v = device code |
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marking H5 sot 23-5
Abstract: vsop8 package outline sot 23-5 marking code H5 date code marking toshiba Nand Wafer Fab Plant Codes ST "package marking code" 162 marking code vt SOT 23-5 sot 23-5 marking code 162 soic 8 marking code V = Device Code
Contextual Info: MC74VHC1G132 2-Input NAND Schmitt-Trigger The MC74VHC1G132 is a single gate CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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mc74vhc1g132marking h5 sot 23-5vsop8 package outlinesot 23-5 marking code h5+7date code marking toshiba nandwafer fab plant codes stpackage marking code" 162marking code vt sot 23-5sot 23-5 marking code 162soic 8 marking codev = device code
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V = Device Code
Abstract: ALPHA NEW sot YEAR DATE CODE sot 23-5 marking code H5 marking H5 sot 23-5 MC74VHC1G135
Contextual Info: MC74VHC1G135 2-Input NAND Schmitt-Trigger with Open Drain Output The MC74VHC1G135 is a single gate CMOS Schmitt NAND trigger with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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mc74vhc1g135v = device codealpha new sot year date codesot 23-5 marking code h5+1marking h5 sot 23-5
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V = Device Code
Abstract: marking code vk, sot-353 GATE MARKING CODE VX SOT23 wz 74 marking fairchild marking codes sot-23 marking code vk, sot-363 marking code V6 diode
Contextual Info: MC74VHC1G04 Inverter The MC74VHC1G04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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mc74vhc1g04353/scv = device codemarking code vk, sot-353+5gate marking code vx sot23wz 74 markingfairchild marking codes sot-23marking code vk, sot-363marking code v6 diode
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AND8004/D
Abstract: V = Device Code date code marking toshiba Nand PIN DIODE MARKING CODE wk marking sbn h1d marking AND8004 MC74HC1G00
Contextual Info: MC74HC1G00 2-Input NAND Gate The MC74HC1G00 is a high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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mc74hc1g00mc74hc353/scand8004/d+6v = device codedate code marking toshiba nandpin diode marking code wkmarking sbnh1d markingand8004
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t08 sot-23
Abstract: ON Semiconductor marking V = Device Code marking L5 sot363 vk sot-363 marking codes fairchild 61 vk sot-353 on alpha year and work week SOT-353 MARKING w5 diode Marking code v3
Contextual Info: MC74VHC1GT08 2-Input AND Gate/CMOS Logic Level Shifter The MC74VHC1GT08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining
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mc74vhc1gt08t08 sot-23on semiconductor markingv = device code+7marking l5 sot363vk sot-363marking codes fairchild 61vk sot-353on alpha year and work weeksot-353 marking w5diode marking code v3
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T138A
Abstract: U04 fairchild Wafer Fab Plant Codes ST PIN DIODE MARKING CODE wk U04 fairchild MARKING ALPHA NEW YEAR DATE CODE DIODE M7 SMP marking code vhc V = Device Code
Contextual Info: MC74HC1GU04 Unbuffered Inverter The MC74HC1GU04 is a high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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mc74hc1gu04mc74hc353/sct138a+8u04 fairchildwafer fab plant codes stpin diode marking code wku04 fairchild markingalpha new year date codediode m7 smpmarking code vhcv = device code
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MC74HC
Abstract: marking t132 marking code V6 diode V = Device Code
Contextual Info: MC74HC1G04 Inverter The MC74HC1G04 is a high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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mc74hc1g04mc74hc353/scmarking t132+2marking code v6 diodev = device code
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SOT23 "Marking Code" t04
Abstract: marking L5 sot363 marking h2 SOT353 ON Semiconductor marking V = Device Code sot363 marking code ca marking 62 ON Semi 34 sot363 t04 sot 23 marking code V6 diode
Contextual Info: MC74VHC1GT04 Inverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT04 is a single gate inverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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mc74vhc1gt04sot23 "marking code" t04marking l5 sot363marking h2 sot353+7on semiconductor markingv = device codesot363 marking code camarking 62 on semi34 sot363t04 sot 23marking code v6 diode
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wz 74 marking
Abstract: t138a V = Device Code
Contextual Info: MC74HC1G02 2-Input NOR Gate The MC74HC1G02 is a high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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mc74hc1g02mc74hc353/scwz 74 marking+2t138av = device code
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marking t132
Abstract: marking code V6 diode MC74VHC1G08 V = Device Code
Contextual Info: MC74VHC1G08 2-Input AND Gate The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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mc74vhc1g08353/scmarking t132marking code v6 diode+1v = device code
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vsop8 package outline
Abstract: vsop8 V = Device Code SOT 363 marking CODE LA marking h8 Wafer Fab Plant Codes ST marking 62 ON Semi diode Marking code v3 hep08 marking code vhc
Contextual Info: MC74VHC1G09 2-Input AND Gate with Open Drain Output The MC74VHC1G09 is an advanced high speed CMOS 2–input AND gate with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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mc74vhc1g09vsop8 package outlinevsop8v = device code+7sot 363 marking code lamarking h8wafer fab plant codes stmarking 62 on semidiode marking code v3hep08marking code vhc
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H2D MARKING CODE
Abstract: marking code V6 DIODE V = Device Code H2D Marking diode Marking code v3
Contextual Info: MC74HC1G08 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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mc74hc1g08mc74hc353/sch2d marking code+4marking code v6 diodev = device codeh2d markingdiode marking code v3
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V = Device Code
Abstract: vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A
Contextual Info: MC74VHC1G86 2-Input Exclusive OR Gate The MC74VHC1G86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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mc74vhc1g86353/scv = device codevsop8 package outline+3wafer fab plant codes st14xxxt138a
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