MARKING CODE 64 SOT23 6 Search Results

c639

Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

diode marking 63s SOT23

Abstract: BAT 61 marking 301 sot-23 marking 65s sot-23 SOT23 Marking 64s bat 301 l marking code 64 sot23 6 65s sot23 marking 64 SOT23 Siemens ESP 100
Contextual Info: SIEMENS B A T 64 Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage ESP: Electrostatic Discharge sensitive device, observe handling precautions!

TS SOT23

Abstract: SOT-23 marking 2a SOT-23 2A 355 sot-23 Q62702-A879 diode marking 63s SOT23 Q62702-A963 Diode Marking C.3 66s sot23 sot 23 1a k
Contextual Info: BAT 64 Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage Pin Configuration BAT64-05 BAT 64-04 BAT64-06 ESD: ElectroStatic Discharge sensitive device, observe handling precautions!

diode marking 63s SOT23

Contextual Info: SIEMENS BAT 64 Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage Pin Configuration A1/A2 m nr Ordering Code Pin Configuration

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

Contextual Info: Product specification DMN3051L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 38mΩ @ VGS = -10V 5.8A 64mΩ @ VGS = -4.5V 4.5A V(BR)DSS • • • • • • • • 30V Description and Applications • • This new generation MOSFET has been designed to minimize the

IRLML6346

Abstract: IRLML2246 IRLML2244 IRLML6244 ML8244 IRLML6344 IRLML9303 IRFML9244 IRLML9301TRPBF IRFML8244
Contextual Info: PD - 96310C IRLML9301TRPbF VDS -30 V VGS Max ± 20 V RDS on max 64 mΩ 103 mΩ (@VGS = -10V) RDS(on) max (@VGS = -4.5V) HEXFET Power MOSFET G 1 3 D S 2 Micro3TM (SOT-23) IRLML9301TRPbF Application(s) • System/Load Switch Features and Benefits Benefits

IRF micro3

Abstract: IRLML9301TRPBF
Contextual Info: PD - 96310C IRLML9301TRPbF HEXFET Power MOSFET VDS -30 V VGS Max ± 20 V RDS on max 64 mΩ 103 mΩ (@VGS = -10V) RDS(on) max (@VGS = -4.5V) G 1 3 D S 2 Micro3TM (SOT-23) IRLML9301TRPbF Application(s) • System/Load Switch Features and Benefits Benefits

transistor cross ref

Abstract: KST63
Contextual Info: KST63/64 KST63/64 Darlington Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -30 Units V VCES VEBO Collector-Emitter Voltage

Contextual Info: PPJA3402 30V N-Channel Enhancement Mode MOSFET Voltage 30 V SOT-23 4.4A Current Unit: inch mm Features  RDS(ON) , VGS@10V, ID@4.4A<48mΩ  RDS(ON) , VGS@4.5V, ID@3.6A<53mΩ  RDS(ON) , VGS@2.5V, ID@2.5A<66mΩ  RDS(ON) , VGS@1.8V, ID@1.5A<92mΩ

MARKING tAN SOT-23

Abstract: TAN SOT-23
Contextual Info: 1217 Reader's 4/30/02 11:13 AM Page 63 Precision Voltage Divider Network Applications • Voltage diversion ■ A/D conversion ■ Reference voltage ■ Matching resistors ■ Parametric control Electrical Characteristics E RTY SERIES Precision Voltage Divider Network

marking 2U 20 diode

Abstract: KST63 2U marking code marking 2U 40 diode marking 2U diode KST64 ST64
Contextual Info: KST63/64 KST63/64 Darlington Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -30 Units V VCES VEBO Collector-Emitter Voltage

KST63

Abstract: marking 2U 20 diode marking 2U 40 diode marking 2U diode marking codes fairchild KST64 ST64 marking 2U
Contextual Info: KST63/64 KST63/64 Darlington Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -30 Units V VCES VEBO Collector-Emitter Voltage

marking 64

Abstract: sot23 HJA
Contextual Info: Silicon Schottky Diode BAT 64 • For low-loss, fast-recovery rectifiers, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage Type Marking Ordering code tape and reel BAT 64 64 Q 62702 - A879

PNP Epitaxial Silicon Transistor sot-23

Abstract: 2u transistor KST63
Contextual Info: KST63/64 PNP EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t: Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

infineon schottky diode bat64

Abstract: marking code 14 diode BAT64 BAT64-02V BAT64-02W BAT64-04 BAT64-04T BAT64-04W BAT64-05 BAT64-05W
Contextual Info: BAT64. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage BAT64 BAT64-02V BAT64-02W BAT64-04 BAT64-04T BAT64-04W ! BAT64-05 BAT64-05W

DMP2305U

Abstract: DMP2305U-7
Contextual Info: DMP2305U P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Low On-Resistance • 60mΩ @ VGS = -4.5V • 90mΩ @ VGS = -2.5V • 113mΩ @ VGS = -1.8V

Contextual Info: DMN3052L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance: RDS ON < 32mΩ @ VGS = 10V RDS(ON) < 42mΩ @ VGS = 4.5V RDS(ON) < 64mΩ @ VGS = 2.5V Low Gate Threshold Voltage

Contextual Info: DMN3052L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance: RDS ON < 32m @ VGS = 10V RDS(ON) < 42m @ VGS = 4.5V RDS(ON) < 64m @ VGS = 2.5V Low Gate Threshold Voltage Low Input Capacitance

Contextual Info: BAT64. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

BAT64-04

Abstract: BAT64 BAT64-02W BAT64-04W BAT64-05 BAT64-05W BAT64-06 BAT64-06W SCD80
Contextual Info: BAT64. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101