MARKING CODE 64 SOT23 6 Search Results

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

TS SOT23

Abstract: SOT-23 marking 2a SOT-23 2A 355 sot-23 Q62702-A879 diode marking 63s SOT23 Q62702-A963 Diode Marking C.3 66s sot23 sot 23 1a k
Contextual Info: BAT 64 Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage Pin Configuration BAT64-05 BAT 64-04 BAT64-06 ESD: ElectroStatic Discharge sensitive device, observe handling precautions!

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

Contextual Info: Product specification DMN3051L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 38mΩ @ VGS = -10V 5.8A 64mΩ @ VGS = -4.5V 4.5A V(BR)DSS • • • • • • • • 30V Description and Applications • • This new generation MOSFET has been designed to minimize the

IRLML6346

Abstract: IRLML2246 IRLML2244 IRLML6244 ML8244 IRLML6344 IRLML9303 IRFML9244 IRLML9301TRPBF IRFML8244
Contextual Info: PD - 96310C IRLML9301TRPbF VDS -30 V VGS Max ± 20 V RDS on max 64 mΩ 103 mΩ (@VGS = -10V) RDS(on) max (@VGS = -4.5V) HEXFET Power MOSFET G 1 3 D S 2 Micro3TM (SOT-23) IRLML9301TRPbF Application(s) • System/Load Switch Features and Benefits Benefits

transistor cross ref

Abstract: KST63
Contextual Info: KST63/64 KST63/64 Darlington Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -30 Units V VCES VEBO Collector-Emitter Voltage

Contextual Info: PPJA3402 30V N-Channel Enhancement Mode MOSFET Voltage 30 V SOT-23 4.4A Current Unit: inch mm Features  RDS(ON) , VGS@10V, ID@4.4A<48mΩ  RDS(ON) , VGS@4.5V, ID@3.6A<53mΩ  RDS(ON) , VGS@2.5V, ID@2.5A<66mΩ  RDS(ON) , VGS@1.8V, ID@1.5A<92mΩ

infineon schottky diode bat64

Abstract: marking code 14 diode BAT64 BAT64-02V BAT64-02W BAT64-04 BAT64-04T BAT64-04W BAT64-05 BAT64-05W
Contextual Info: BAT64. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage BAT64 BAT64-02V BAT64-02W BAT64-04 BAT64-04T BAT64-04W ! BAT64-05 BAT64-05W

Contextual Info: T-0% -q^ Silicon Schottky Diode 32E D • BAT 64 Ô23b32ü QQlbSST 1 ■ SIP SIEMENS/ SPCLi SEMICONDS • For low-loss, fast-recovery rectifiers, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage

Contextual Info: BAT64. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage • Pb-free RoHS compliant package • Qualified according AEC Q101 BAT64

DTC143TE

Abstract: DTC144TSA
Contextual Info: TM Micro Commercial Components DIGITAL TRANSISTORS MCC Part Number Power Dissipation Output Current Supply Voltage Pd mW Io(mA) VCC(V) DC Output Current Voltage Gain Input Input Transistion Frequency Package Polarity Marking Code Internal Diagram Gi Vo(V)

24FC64FT

Abstract: A14* marking sot23-5 24FC64F
Contextual Info: 24AA64F/24LC64F/24FC64F 64K I2C Serial EEPROM with Quarter-Array Write-Protect Device Selection Table Part Number VCC Range Max. Clock Frequency Temp. Ranges 24AA64F 1.7-5.5 400 kHz 1 I 24LC64F 2.5-5.5 400 kHz I, E 24FC64F 1.7-5.5 1 MHz(2) I • Temperature Ranges:

Contextual Info: DMP2305U Features Mechanical Data • • • • • • • • • Low On-Resistance • 60mΩ @ VGS = -4.5V • 90mΩ @ VGS = -2.5V • 113mΩ @ VGS = -1.8V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2

marking 10l

Abstract: MARKING to SOT23-3 L 5 SOT23-3 11 sot23-3 Marking 810 sot23 FM810RHS3
Contextual Info: FM809/810 3-Pin µC Supervisor Circuits General Description • 140ms power-on RESET delay minimum The FM809/810 are supervisor circuits that monitor power supply or other system voltages and issue reset pulses (FM809 = RESET, FM810 = RESET) when a fault condition exists. Several

sot23 1V

Abstract: FM809 FM810 409mf marking diagram 04 sot23 marking code 64 sot23 6
Contextual Info: FM809/810 3-Pin µC Supervisor Circuits General Description • 140ms power-on RESET delay minimum The FM809/810 are supervisor circuits that monitor power supply or other system voltages and issue reset pulses (FM809 = RESET, FM810 = RESET) when a fault condition exists. Several

a4 sot23-3

Abstract: SOT23-3 MARKING 40 SOT23 09S FM810RHS3 top marking sot23-3 marking 10l a4 SOT23 18 SOT23-3 MARKING FM809MS3 SOT23 A4
Contextual Info: FM809/810 3-Pin µC Supervisor Circuits General Description • 140ms power-on RESET delay minimum The FM809/810 are supervisor circuits that monitor power supply or other system voltages and issue reset pulses (FM809 = RESET, FM810 = RESET) when a fault condition exists. Several

diode T4 Marking

Abstract: U3 SOT23-8
Contextual Info: 64-Position OTP Digital Potentiometer AD5171 FUNCTIONAL BLOCK DIAGRAM 64 position One-time programmable OTP set-and-forget resistance setting—low cost alternative over EEMEM Unlimited adjustments prior to OTP activation 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ end-to-end resistance

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

marking code SOT23 SSi

Abstract: MARKING code SSi SOT23 code marking ssi sot-23 O ssi SOT-23
Contextual Info: SIEMENS PNP Silicon Darlington Transistors SMBTA 63 SMBTA 64 • High collector current • High DC current gain Type Marking Ordering Code tape and reel PinCïonfigui ation 1 2 3 Package1) SMBTA 63 SMBTA 64 s2U s2V Q68000-A2625 Q68000-A2485 B SOT-23 E C

marking BSs sot23

Abstract: transistor EKs ic 41 b uPC1659 transistor EKs 80 Q62702-C1659 Q62702-S535 AMS marking code
Contextual Info: BCX 41 BSS 64 NPN Silicon AF and Switching Transistor BCX 41 BSS 64 High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BCX 42, BSS 63 PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)

marking BSs sot23

Contextual Info: BSS 64 Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung 1.3 ±0.1 2.5 max 3 Type Code 2 1 250 mW Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1

Contextual Info: DMN3051L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 38mΩ @ VGS = -10V 5.8A 64mΩ @ VGS = -4.5V 4.5A V(BR)DSS • • • • • • • • 30V Description and Applications • • This new generation MOSFET has been designed to minimize the