MARKING CODE 5CS Search Results

5Cs transistor

Abstract: Q62702-C2328 C2328 transistor C2330 transistor 5cs transistor 5bs Q62702-C2330 c2330 1B marking transistor TRANSISTOR C2328
Contextual Info: BC 807-16W PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W NPN Type Marking Ordering Code Pin Configuration Package

5Cs transistor

Abstract: transistor 5bs 5BS transistor
Contextual Info: SIEMENS BC 807W BC 808W PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W NPN Type Marking Ordering Code Pin Configuration

transistors BC 457

Abstract: BC 458 BC 459 transistors BC 458 transistors BC 458 pnp ic 807 marking 5cs bc 457 5Bs sot-23
Contextual Info: SIEMENS PNP Silicon AF Transistors • • • • • BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 NPN Type Marking Ordering Code PinCionfiguration

ic 817

Abstract: C1740 Q62702-C1740 6CS marking code sot 23 C1505 B 817 5Bs sot-23 c1740 npn marking code 5cs BC 817 25 NPN
Contextual Info: PNP Silicon AF Transistors ● ● ● ● ● BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 NPN Type Marking Ordering Code Pin Configuration

C1735

Abstract: Q62702-C1735 d2495 ic 807 Q62702-C1689 Q62702-C1504 Q62702-C1692 Q62702-C1721 Q62702-C1736 marking 5Cs
Contextual Info: PNP Silicon AF Transistors ● ● ● ● ● BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 NPN Type Marking Ordering Code Pin Configuration

Contextual Info: SIEMENS PNP Silicon AF Transistors BC 807 BC 808 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 817, BC 818 NPN Type Marking Ordering Code PinCionfigur ation

Q62702-C1689

Abstract: ic 807 QBC807 Q62702-C1504 Q62702-C1692 Q62702-C1721 Q62702-C1735 Q62702-C1736 marking code 359 sot-23 marking code BC
Contextual Info: PNP Silicon AF Transistors ● ● ● ● ● BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 NPN 2 3 1 Type Marking Ordering Code Pin Configuration

PEAK tray drawing

Contextual Info: SHARP LH52 5CST 1 Contents 1. Description 2. Pin Configuration 3. Truth Table 4. Block Diagran . 2 .

5Cs transistor

Abstract: 5BS transistor marking 5bs 5as package package marking 5as transistor 5bs
Contextual Info: BC807./ BC808. PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817./W, BC818./W NPN Type Marking Pin Configuration BC807-16

transistor 5cs

Abstract: marking 5Cs BC807 BC807-16 BC807-16W BC807-25 BC807-25W BC807-40 BC807-40W BC817
Contextual Info: BC807./BC808. PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817./W, BC818./W NPN • Pb-free (RoHS compliant) package 1)

Contextual Info: BC807, BC808 PNP Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Comlementary types: BC817, BC818 NPN 1 Type Marking Pin Configuration BC807-16 5As

Contextual Info: SMD Transient Voltage Suppressor TV05A5V0-G Thru. TV05A191-G Working Peak Reverse Voltage: 5.0 to 190 Volts Peak Pulse Power: 500 Watts RoHS Device Features DO-214AC SMA -Glass passivated chip. -Low leakage. 0.175(4.44) 0.155(3.94) -500W peak pulse power capability with a 10/1000 s

smd code marking 5bw

Contextual Info: COMCHIP SMD Transient Voltage Suppressor SMD Diodes Specialist TV05A5V0-HF Thru. TV05A191-HF Working Peak Reverse Voltage: 5.0 to 190 Volts Peak Pulse Power: 500 Watts RoHS Device Halogen free DO-214AC SMA Features -Glass passivated chip. 0.175(4.44) 0.155(3.94)

305 5VL

Abstract: 5AW SMD MARKING CODE 5VL 305
Contextual Info: COMCHIP SMD Transient Voltage Suppressor SMD Diodes Specialist TV05A5V0-G Thru. TV05A191-G Working Peak Reverse Voltage: 5.0 to 190 Volts Peak Pulse Power: 500 Watts RoHS Device Features DO-214AC SMA -Glass passivated chip. -Low leakage. 0.175(4.44) 0.155(3.94)

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

Contextual Info: BC807W, BC808W PNP Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC817W, BC818W NPN 1 Pin Configuration VSO05561 Type Marking

DSC8101

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSC7101 Silicon NPN epitaxial planar type For low frequency amplification DSC8101 in MiniP3 type package • Features  Package  Low collector-emitter saturation voltage VCE(sat)  Contributes to miniaturization of sets, reduction of component count.

Contextual Info: DSC7101 Silicon NPN epitaxial planar type For low frequency amplification Complementary to DSA7101 Unit: mm • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSC7101 Silicon NPN epitaxial planar type For low frequency amplification DSC8101 in MiniP3 type package • Features  Package  Low collector-emitter saturation voltage VCE(sat)  Contributes to miniaturization of sets, reduction of component count.

Contextual Info: BC807-16W/-25W/-40W Taiwan Semiconductor Small Signal Product 200mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface mount device type - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate

Contextual Info: Errata Sheet for Cyclone V Devices ES-1035-1.9 Errata Sheet This errata sheet provides information about known issues affecting Cyclone V devices. Table 1 lists the specific device issues and the affected Cyclone V devices. Table 1. Device Issues Issue Affected Devices

DSC8101

Abstract: DSC7101 marking code 5cs ZJD00371AED marking 5Cs
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSC7101 Silicon NPN epitaxial planar type For low frequency amplification DSC8101 in MiniP3 type package • Package  Features  Contributes to miniaturization of sets, reduction of component count.

5Ct transistor

Abstract: 5Cs transistor transistor 5ct marking 5Ct sot transistor 5cs 5Ct marking code marking 5cs marking code 5cs MARKING 5cR MARKING 5ct
Contextual Info: BC807-16W/25W/40W 200mW, PNP Small Signal Transistor Small Signal Diode SOT-323 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 D —Matte Tin Sn lead finish with Nickel(Ni) underplate

5Ct transistor

Abstract: 5Cs transistor transistor 5ct
Contextual Info: BC807-16W/25W/40W 200mW, PNP Small Signal Transistor Small Signal Diode SOT-323 3 Collector A 1 Base F 2 Emitter B Features E ­Epitaxial planar die construction ­Surface device type mounting C ­Moisture sensitivity level 1 D ­Matte Tin Sn lead finish with Nickel(Ni) underplate