STK and STR integrated circuits
Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram
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od-80ot-223ot-89stk and str integrated circuits+9transistor smd zg 1estr-z4579turuta6 pin transistor smd code patransistor 5d smdelm85361astk and str integrated circuits, 2011 edition5g smd transistor15d diode smd code
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3225 K30
Abstract: K30 varistor VARISTOr MZ smd code 601 ZV30K0603 keko st smd IC marking code
Contextual Info: Multilayer Technology Varistor Plus ZV Series Low Voltage SMD Varistors SEI Electronics Inc. • P.O. Box 58789 • Raleigh, NC 27658-8789 • Telephone: 919 850-9500 • FAX: (919) 850-9504 Toll Free: (888) SEI-SEI-SEI • www.seielect.com • email: marketing@seielect.com • ISO 9002 / QS 9000 Registered
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3225 k30k30 varistorvaristor mzsmd code 601+3zv30k0603kekost smd ic marking code
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IPP25N06S3L-21
Abstract: Diode smd marking 44 ANPS071E IPB25N06S3L-21 INFINEON smd PART MARKING
Contextual Info: Target data sheet IPI25N06S3L-21 IPP25N06S3L-21,IPB25N06S3L-21 OptiMOS -T Power-Transistor Product Summary Feature VDS • n-Channel RDS on • Enhancement mode ID • Logic Level • AEC Q101 qualified max. SMD version P- TO262 -3-1 P- TO263 -3-2 55 V
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ipi25n06s3l-21ipp25n06s3l-21ipb25n06s3l-213n06l21+4bipp25n06s3l-21diode smd marking 44anps071einfineon smd part marking
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3P03L04
Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
Contextual Info: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V
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ipi80p03p3l-04ipp80p03p3l-04ipb80p03p3l-043p03l04+7bipp80p03p3l-04anps071einfineon smd part markinginfineon part markingdiode smd marking agpackage to220diode smd marking code um 31
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Contextual Info: Product specification PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Rev. 1 — 26 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
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pmv28uno-236ab |
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3N0625
Abstract: INFINEON PART MARKING 252 SMD marking code 1696 ANPS071E IPI25N06S3-25 IPP25N06S3-25 IPB25N06S3-25 INFINEON smd PART MARKING smd diode code marking 33A TO220 package infineon
Contextual Info: Target data sheet OptiMOS -T Power-Transistor Product Summary VDS Feature • n-Channel 55 RDS on max. SMD version • Enhancement mode ID • AEC Q101 qualified • Low On-Resistance RDS(on) IPI25N06S3-25 IPP25N06S3-25,IPB25N06S3-25 P- TO262 -3-1 V 24.9
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ipi25n06s3-25ipp25n06s3-25ipb25n06s3-253n0625+7bipp25n06s3-25infineon part marking 252smd marking code 1696anps071einfineon smd part markingsmd diode code marking 33ato220 package infineon
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K802
Abstract: varistor ST
Contextual Info: Multilayer Technology Varistor Plus ZV Series Low Voltage Leaded Varistors SEI Electronics Inc. • P.O. Box 58789 • Raleigh, NC 27658-8789 • Telephone: 919 850-9500 • FAX: (919) 850-9504 Toll Free: (888) SEI-SEI-SEI • www.seielect.com • email: marketing@seielect.com • ISO 9002 / QS 9000 Registered
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k802varistor st |
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Contextual Info: Product specification PMV33UPE 20 V, single P-channel Trench MOSFET Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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pmv33upeo-236ab |
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05N03LA
Abstract: 05n03l 05N03 P-TO252-3-11 P-TO252 S4230 diode SMD marking code 27 P-TO251 marking CODE R SMD DIODE smd marking av
Contextual Info: OptiMOS 2 Power-Transistor IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID 50 A • N-channel, logic level
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ipd05n03laips05n03laipf05n03laipu05n03la+10p-to252-3-1105n03la05n03l05n03p-to252s4230diode smd marking code 27p-to251marking code r smd diodesmd marking av
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marking code br 39 SMD
Abstract: smd marking code 321 05n03la
Contextual Info: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ
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ipd05n03laips05n03laipf05n03laipu05n03la+3marking code br 39 smdsmd marking code 32105n03la
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05N03LA
Abstract: IPU05N03LA p 181 V
Contextual Info: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID
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ipd05n03laips05n03laipf05n03laipu05n03la+205n03lap 181 v
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3N06L06
Abstract: marking CODE R SMD DIODE SMD MARKING CODE transistor TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2 SP0000-88004 IPI80N06S3L06
Contextual Info: IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow
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ipb80n06s3l-06ipi80n06s3l-06ipp80n06s3l-06pg-to263-3-2+9pg-to262-3-1pg-to220-3-1eia/jesd22-a114-bsp0000-880043n06l06marking code r smd diodesmd marking code transistortransistor smd marking code agipi80n06s3l06
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Q67065-A7014
Abstract: IPI80N06S3L06
Contextual Info: Preliminary Data Sheet IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80
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ipb80n06s3l-06ipi80n06s3l-06ipp80n06s3l-06pg-to263-3-2+4pg-to262-3-1pg-to220-3-1q67065-a7014ipi80n06s3l06
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3N06L06
Abstract: IPI80N06S3L06 ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2
Contextual Info: IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1
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ipb80n06s3l-06ipi80n06s3l-06ipp80n06s3l-06pg-to263-3-2+5pg-to262-3-1pg-to220-3-13n06l06ipi80n06s3l06anps071e
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09n03lb
Abstract: PG-TO252-3-23
Contextual Info: OptiMOS 2 Power-Transistor IPD09N03LB G IPS09N03LB G IPU09N03LB G IPF09N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 9.1 mΩ ID 50 A • N-channel, logic level
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ipd09n03lbipu09n03lbips09n03lbipf09n03lb+209n03lbpg-to252-3-23
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2n04h4
Abstract: SP0002-18169 H4 SMD SP000218165 TRANSISTOR SMD MARKING CODE 42 IPB80N04S2-H4 IPI80N04S2-0H4 IPI80N04S2-H4 IPP80N04S2-H4 PG-TO263-3-2
Contextual Info: IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.7 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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ipb80n04s2-h4ipp80n04s2-h4ipi80n04s2-h4pg-to263-3-2+9pg-to220-3-1pg-to262-3-1sp0002-181652n04h4sp0002-18169h4 smdsp000218165transistor smd marking code 42ipi80n04s2-0h4
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3N0609
Abstract: smd diode marking 77 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 PG-TO263-3-2 SP0000-88715 SMD MARKING Asf
Contextual Info: IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 8.8 mΩ ID 77 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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ipb77n06s3-09ipi77n06s3-09ipp77n06s3-09pg-to263-3-2+9pg-to262-3-1pg-to220-3-1eia/jesd22-a114-bsp0000-887153n0609smd diode marking 77marking code r smd diodetransistor smd marking code agsmd marking asf
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12n03lb
Abstract: 12n03l d2422 12n03
Contextual Info: OptiMOS 2 Power-Transistor IPD12N03LB G IPS12N03LB G IPU12N03LB G IPF12N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 11.6 mΩ ID 30 A • N-channel, logic level
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ipd12n03lbipu12n03lbips12n03lbipf12n03lb+5pg-to252-3-1112n03lb12n03ld242212n03
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06N03LB
Abstract: PG-TO252-3-11 IPD06N03LB Q67042-S4263
Contextual Info: OptiMOS 2 Power-Transistor IPD06N03LB G IPS06N03LB G IPU06N03LB G IPF06N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 6.1 mΩ ID 50 A • N-channel, logic level
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ipd06n03lbipu06n03lbips06n03lbipf06n03lb+3pg-to252-3-1106n03lbq67042-s4263
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2n0612
Abstract: smd diode marking 77 ANPS071E IPB77N06S2-12 IPP77N06S2-12 PG-TO263-3-2 infineon 2n0612 SP0002-18173 SP0002-18172
Contextual Info: IPB77N06S2-12 IPP77N06S2-12 OptiMOS Power-Transistor Product Summary Features V DS • N-channel - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID 11.7 77 V mΩ A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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ipb77n06s2-12ipp77n06s2-12pg-to263-3-2pg-to220-3-1+6sp0002-181732n0612smd diode marking 77anps071einfineon 2n0612sp0002-18172
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Contextual Info: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID
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ipd05n03laips05n03laipf05n03laipu05n03la+1p-to252-3-11
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05N03LA
Abstract: IPF05N03LA 05n03l IPD05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11
Contextual Info: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID
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ipd05n03laips05n03laipf05n03laipu05n03la+3p-to252-3-1105n03la05n03l
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05N03LA
Abstract: 05n03 fet to251 marking CODE R SMD DIODE IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11 05N03L
Contextual Info: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID
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ipd05n03laips05n03laipf05n03laipu05n03la+6p-to252-3-1105n03la05n03fet to251marking code r smd diode05n03l
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ZTA 4.0 MG
Contextual Info: TOKEN CERAMIC RESONATORS MHz/KHz Type Ceramic Resonators Token Electronics Industry Co., Ltd. Taiwan: No. 137, Sec. 1, Chung Shin Rd., Wu Ku Hsiang, Taipei Hsien, Taiwan, R.O.C TEL: 886-2-2981 0109; FAX: 886-2-2988 7487 China: 12F, Zhongxing Industry Bld., Chuangye Rd., Nanshan District, Shenzhen, Guangdong
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pc1401cla7620ta7777plda3586n+7la7650ta8654anan5302ztb912fztb912f101ztb912f104zta 4.0 mg
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