MARKING CODE 38 SMD TRANSISTOR Search Results

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

3P03L04

Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
Contextual Info: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V

Contextual Info: Product specification PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Rev. 1 — 26 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench

3N0625

Abstract: INFINEON PART MARKING 252 SMD marking code 1696 ANPS071E IPI25N06S3-25 IPP25N06S3-25 IPB25N06S3-25 INFINEON smd PART MARKING smd diode code marking 33A TO220 package infineon
Contextual Info: Target data sheet OptiMOS -T Power-Transistor Product Summary VDS Feature • n-Channel 55 RDS on max. SMD version • Enhancement mode ID • AEC Q101 qualified • Low On-Resistance RDS(on) IPI25N06S3-25 IPP25N06S3-25,IPB25N06S3-25 P- TO262 -3-1 V 24.9

Contextual Info: Product specification PMV33UPE 20 V, single P-channel Trench MOSFET Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

3N06L06

Abstract: marking CODE R SMD DIODE SMD MARKING CODE transistor TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2 SP0000-88004 IPI80N06S3L06
Contextual Info: IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow

2n04h4

Abstract: SP0002-18169 H4 SMD SP000218165 TRANSISTOR SMD MARKING CODE 42 IPB80N04S2-H4 IPI80N04S2-0H4 IPI80N04S2-H4 IPP80N04S2-H4 PG-TO263-3-2
Contextual Info: IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.7 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

3N0609

Abstract: smd diode marking 77 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 PG-TO263-3-2 SP0000-88715 SMD MARKING Asf
Contextual Info: IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 8.8 mΩ ID 77 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

05N03LA

Abstract: 05n03 fet to251 marking CODE R SMD DIODE IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11 05N03L
Contextual Info: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID

2N04L03

Abstract: IPP80N04S2L-03 OPTIMOS SP0002-20158 DD-32 TRANSISTOR SMD MARKING CODE 42 ANPS071E IPB80N04S2L-03 PG-TO263-3-2 SP0002-19063
Contextual Info: IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.1 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

BSO604NS2

Contextual Info: Target data sheet BSO604NS2 OptiMOS =Small-Signal-Transistor Features Product Summary • Dual N-Channel Drain source voltage VDS 55 V Drain-source on-state resistance RDS on 38 mΩ Continuous drain current ID 5 A • Enhancement mode • Avalanche rated

PN04L03

Abstract: smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42
Contextual Info: IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

2N04L03

Abstract: SPB80N04S2L-03 SPP80N04S2L-03
Contextual Info: SPP80N04S2L-03 SPB80N04S2L-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version • Logic Level ID •=175°C operating temperature P-TO263-3-2 40 V 3.1 mΩ 80 A P-TO220-3-1

2N04L03

Abstract: ANPS071E SPB80N04S2L-03 SPP80N04S2L-03
Contextual Info: SPP80N04S2L-03 SPB80N04S2L-03 OptiMOS
Power-Transistor Product Summary Feature 40 VDS
N-Channel RDS on
Enhancement mode max. SMD version ID
Logic Level P- TO263 -3-2
175°C operating temperature V 3.1 m
80 A P- TO220 -3-1
Avalanche rated
dv/dt rated

2n08l07

Abstract: 67a smd 2N08L07 POWER 2n08l 2n08l07 marking smd diode 67A s6015 ANPS071E SPB80N08S2L-07 SPP80N08S2L-07
Contextual Info: SPP80N08S2L-07 SPB80N08S2L-07 OptiMOS
Power-Transistor Product Summary Feature 75 VDS
N-Channel RDS on
Enhancement mode max. SMD version ID
Logic Level P- TO263 -3-2
175°C operating temperature V 6.8 m
80 A P- TO220 -3-1
Avalanche rated
dv/dt rated

Q67060-S6038

Abstract: SPB100N04S2L-03 SPP100N04S2L-03 Diode 1_b SMD PN04L03
Contextual Info: SPP100N04S2L-03 SPB100N04S2L-03 Preliminary data OptiMOS
=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated Type Package VDS 40 RDS on max. SMD version 3 ID

ANPS071E

Abstract: SPB100N04S2L-03 SPP100N04S2L-03
Contextual Info: SPP100N04S2L-03 SPB100N04S2L-03 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • Logic Level V 3 mΩ 100 P- TO263 -3-2 • 175°C operating temperature 40 A P- TO220 -3-1 • Avalanche rated

2n06l05

Abstract: ANPS071E SPB80N06S2L-05 SPI80N06S2L-05 SPP80N06S2L-05
Contextual Info: SPI80N06S2L-05 SPP80N06S2L-05,SPB80N06S2L-05 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level  Avalanche rated  dv/dt rated P- TO262 -3-1 VDS 55 RDS on max. SMD version 4.5 m ID 80 A P- TO263 -3-2 Type Package

pn06l05

Abstract: SPB100N06S2L-05 SPB100N06S2L05 SPP100N06S2L-05 Q67060-S6042
Contextual Info: SPP100N06S2L-05 SPB100N06S2L-05 Preliminary data OptiMOS
=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated Type Package VDS 55 RDS on max. SMD version 4.4

p2n04l03

Abstract: IPB160N04S2L-03 SP0002-18153 TRANSISTOR SMD MARKING CODE 42 ANPS071E SP00021
Contextual Info: IPB160N04S2L-03 OptiMOS - T Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max 2.7 mΩ ID 160 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

RBS 6402

Abstract: smd code 1Bs smd fuse marking code TN solar cell cnc TRANSISTOR SMD MARKING CODE kn smd transistor 5Bs smd transistor marking DK RH smd transistor marking cf rh RBS 2202 telecom rbs 6102
Contextual Info: Contents 2011 RoHS Compliant CERAMIC METALIZED SUBSTRATE Ceramic Metalized Substrate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . F1-F2 CIRCUIT PROTECTION PRODUCTS Page Over-Current Protection CF/CFS

PN0404

Abstract: IPB100N04S2-04 ANPS071E marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE ag TRANSISTOR SMD MARKING CODE t 04 IPP100N04S2-04 PG-TO263-3-2 SP0002-19056
Contextual Info: IPB100N04S2-04 IPP100N04S2-04 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.3 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

06n03la

Abstract: 06n03la datasheet, download SMD MARKING CODE transistor IPB06N03LA IPI06N03LA IPP06N03LA IPP06 59-MID 06N03L 06n03
Contextual Info: IPB06N03LA IPI06N03LA, IPP06N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 5.9 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM)

05N03LA

Abstract: Q67042-S4141 IPB05N03LA IPI05N03LA IPP05N03LA D55 SMD CODE MARKING 05N03L
Contextual Info: IPB05N03LA IPI05N03LA, IPP05N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 4.6 mΩ ID 80 A • Logic level • Excellent gate charge x R DS(on) product (FOM)