MARKING CODE 34N Search Results

77V011

Abstract: FWZ9929G IDT77V011
Contextual Info: IDT77V011 Device Errata Notes Supplemental Information The revision of the 77V011 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ Data Code dt 77V011 L155DA FWZ9929G The revision is also stored in the Device ID register at address 0x8000.

DNA MARKING CODE

Abstract: utopia 2 WF-2
Contextual Info: ,'79 'HYLFH UUDWD Notes Sup Supplemental Inf Information The revision of the 77V011 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ Data Code dt 77V011 L155DA FWZ9929G The revision is also stored in the Device ID register at address 0x8000.

td 2320

Abstract: KQT0402 diode CODE 51n KQT0402TTD16N
Contextual Info: INDUCTORS AIR CORE WIREWOUND CHIP INDUCTOR KQT 0402 4 5 W 2 STRUCTURE H 1 2 3 4 5 Ht 1 Wt P L 3 Ceramic core Winding wire Electrode Inner coat Flat top film IDENTIFICATION PRODUCT CODE BODY COLOR MARKING Products with Pb-free terminations meet RoHS requirements

td 2320

Abstract: Marking Code 34n KQT0402
Contextual Info: INDUCTORS TECHNOLOGY OF TOMORROW 4 5 W AIR CORE WIREWOUND CHIP INDUCTOR KQT 0402 2 STRUCTURE H 1 2 3 4 5 Ht 1 Wt P L 3 Ceramic core Winding wire Electrode Ag/Pd + Ni + Solder Inner coat Flat top film IDENTIFICATION PRODUCT CODE COATING COLOR MARKING KQT0402

td 2320

Abstract: td36n
Contextual Info: INDUCTORS TECHNOLOGY OF TOMORROW 4 5 W AIR CORE WIREWOUND CHIP INDUCTOR KQT 0402 2 STRUCTURE H 1 2 3 4 5 Ht 1 Wt L P 3 Ceramic core Winding wire Electrode Inner coat Flat top film IDENTIFICATION PRODUCT CODE BODY COLOR KQT0402 White MARKING Products with Pb-free terminations

KQT0402

Abstract: td 2320
Contextual Info: INDUCTORS AIR CORE 4 5 W WIREWOUND CHIP INDUCTOR KQT 0402 2 STRUCTURE H 1 2 3 4 5 Ht 1 Wt P L 3 Ceramic core Winding wire Electrode Inner coat Flat top film IDENTIFICATION PRODUCT CODE KQT0402 BODY COLOR MARKING White All these products have Pb-free terminations

Contextual Info: INDUCTORS TECHNOLOGY OF TOMORROW 4 5 W AIR CORE WIREWOUND CHIP INDUCTOR KQT 0402 2 STRUCTURE H 1 2 3 4 5 Ht 1 Wt L P 3 Ceramic core Winding wire Electrode Inner coat Flat top film IDENTIFICATION PRODUCT CODE BODY COLOR KQT0402 White MARKING Products with Pb-free terminations

Contextual Info: INDUCTORS TECHNOLOGY OF TOMORROW 4 5 W AIR CORE WIREWOUND CHIP INDUCTOR KQT 0402 2 STRUCTURE H 1 2 3 4 5 Ht 1 Wt L P 3 Ceramic core Winding wire Electrode Inner coat Flat top film IDENTIFICATION PRODUCT CODE BODY COLOR KQT0402 White MARKING Products with Pb-free terminations

NH51

Contextual Info: INDUCTORS TECHNOLOGY OF TOMORROW 4 5 W AIR CORE WIREWOUND CHIP INDUCTOR KQT 0402 2 STRUCTURE H 1 2 3 4 5 Ht 1 Wt L P 3 Ceramic core Winding wire Electrode Inner coat Flat top film IDENTIFICATION PRODUCT CODE BODY COLOR KQT0402 White MARKING Products with Pb-free terminations

IRF Power MOSFET code marking

Abstract: 24v 12v 20A regulator IRFH7932pbF DM marking code
Contextual Info: PD - 96140A IRFH7932PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits l l l l l

Contextual Info: PD - 96140A IRFH7932PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits l l l l l

diode 22b3

Abstract: 22B3
Contextual Info: PD - 96140 IRFH7932PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits l l l l l

Contextual Info: IRFH7932PbF HEXFET Power MOSFET Applications Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems l l VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits Very low RDS(ON) at 4.5V VGS

Contextual Info: IRFH7932PbF HEXFET Power MOSFET Applications Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems l l VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits Very low RDS(ON) at 4.5V VGS

Contextual Info: Bulletin PD-21099 11/05 60EPU06PbF 60APU06PbF Ultrafast Soft Recovery Diode Features • Ultrafast Recovery • 175°C Operating Junction Temperature • Lead-Free "PbF" suffix trr = 34ns (typ) IF(AV) = 60Amp VR = 600V Benefits • Reduced RFI and EMI • Higher Frequency Operation

60APU06PBF

Abstract: IRFP250 WELDING APPLICATION NOTE irfp250 applications vr1 500 P335H 60EPU06PBF 60APU06 60EPU06 IRFP250
Contextual Info: Bulletin PD-21099 11/05 60EPU06PbF 60APU06PbF Ultrafast Soft Recovery Diode Features • Ultrafast Recovery • 175°C Operating Junction Temperature • Lead-Free "PbF" suffix trr = 34ns (typ) IF(AV) = 60Amp VR = 600V Benefits • Reduced RFI and EMI • Higher Frequency Operation

100V N-Channel Power MOSFET 500A

Abstract: MOSFET TO-252 TSM35N10
Contextual Info: TSM35N10 100V N-Channel Power MOSFET TO-252 DPAK PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS (V) RDS(on)(mΩ) ID (A) 100 37 @ VGS =10V 32 Block Diagram Advanced Trench Technology Low RDS(ON) 37mΩ (Max.) Low gate charge typical @ 34nC (Typ.)

N-Channel

Abstract: MOSFET TO-252
Contextual Info: TSM35N10 100V N-Channel Power MOSFET TO-252 DPAK PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS (V) RDS(on)(mΩ) ID (A) 100 37 @ VGS =10V 32 Block Diagram Advanced Trench Technology Low RDS(ON) 37mΩ (Max.) Low gate charge typical @ 34nC (Typ.)

Contextual Info: MDD175-34N1 High Voltage Standard Rectifier Module VRRM = 2x 3400 V I FAV = 240 A VF = 1.01 V Phase leg Part number MDD175-34N1 Backside: isolated 2 1 3 Features / Advantages: Applications: Package: Y1 ● Planar passivated chips ● Very low leakage current

Contextual Info: SCS110KG SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 10A QC 34nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)

Contextual Info: SCS110KG SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 10A QC 34nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)

Contextual Info: SCS220KE2 SiC Schottky Barrier Diode Datasheet Outline VR 1200V IF 10A/20A* QC 34nC Per leg TO-247 *(Per leg / Both legs) (1) (2) (3) Inner circuit Features 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode

SCS110KG

Contextual Info: SCS110KG Datasheet SiC Schottky Barrier Diode lOutline VR 1200V IF 10A QC 34nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)

Contextual Info: SCS210KG Datasheet SiC Schottky Barrier Diode Outline VR 1200V IF 10A QC 34nC TO-220AC 1 (2) (3) Inner circuit Features (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible