MARKING CODE 1I Search Results

Y parameters of transistors

Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor
Contextual Info: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF power MOS transistors are marked with a code that indicates their gate-source voltage range see Table 8 .

marking code ER sot 143

Contextual Info: Silicon N Channel MOSFET-Tetrode BF 994 S 0 For VHF applications, especially for input and mixer stages with wide tuning range, e.g. in CATV tuners Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package BF 994 S MG

BF996

Abstract: 393bf BF996S
Contextual Info: Silicon N Channel MOSFET Tetrode • • • BF 996 S For input stages in UHF TV tuners High transconductance Low noise figure Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package B F 996 S MH Q62702-F964 Q62702-F1021

Contextual Info: f w > ' $ - O c! Silicon Switching Diode Array _ 32E D • B A S 28 Ô23b320 GQlbSDb G « S I P SIEMENS/ SPCLi SEMICONDS • For high-speed switching • Electrically Isolated diodes Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape

BF993

Abstract: Silicon N Channel MOSFET Tetrode
Contextual Info: Silicon N Channel MOSFET Tetrode • • BF 993 High gain, low distortion For VHF TV and FM mixer and input stages Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape Package BF 993 ME Q62702-F899 Q62702-F1018 SOT 143 Maximum ratings

Hall effect 215 DB

Abstract: HAL401
Contextual Info: HAL400, HAL401 Linear Hall Effect Sensor ICs in CMOS technology PRELIMINARY DATASHEET Marking Code Type Release Notes: Revision bars indicate significant changes to the previous edition. Temperature Range III!!!!!! iiiiiiiiii c HAL400SO 400A 400E 400C HAL401SO

marking aj

Contextual Info: Aj_r\ c. /// /// IOND/ PRINT RM SEP.03,1998 m :///////// ISSUED MARKING P/N /(REVERSE SIDE) 1i -3.4 CONTACT DETAIL DATE CODE CD NOTE LO 1. CONTACT PLATING GOLD(0.2 miti MIN.)ON MATING AREA, TIN/LEAD ON TERMINATION AREA, ALL OVER NICKEL UNDERPLATED. 2. MATING CONNECTOR

Contextual Info: ERC91 - 2 3 . A : Outline Drawings LOW LOSS SUPER HIGH SPEED RECTIFIER ! Features • 1IfcVF • S Low V f tf : Marking il 5 - 3 - K & Color code Silver Super high speed switching. • « » f lM W * $ Abridged type name High reliability by planer design.

BF1009

Abstract: 1009 Q62702-F1613
Contextual Info: BF 1009 Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Q62702-F1487

Abstract: BF1012
Contextual Info: BF 1012 Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 12V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Q62702-F1628

Contextual Info: BF 1009S Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Q62702-F1498

Contextual Info: BF 1005 Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Bi 3101 A

Abstract: transistor ITT 108 MMBT3904
Contextual Info: MMBT3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the NPN transistor MMBT3904 is recommended. Pin Configuration 1 = Collector, 2 = Base, 3 = Emitter. Marking code 3N SOT-23 Plastic Package Weight approx. 0.008 g

Q62702-F1628

Abstract: marking code g1s
Contextual Info: BF 1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Q62702-F1665

Contextual Info: BF 1005S Silicon N-Channel MOSFET Tetrode • For low-noise, high gain-controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

1012S

Abstract: Q62702-F1627 BF1012S
Contextual Info: BF 1012S Silicon N-Channel MOSFET Tetrode ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration BF 1012S NYs 1=S Q62702-F1627 2=D Package 3 = G2 4 = G1 SOT-143 Maximum Ratings Parameter Symbol

Silicon N Channel MOSFET Tetrode

Contextual Info: SIEMENS Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network . HF O utput + DC ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

marking code g1s

Abstract: Q62702-F1665
Contextual Info: BF 1005S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

marking code g1s

Abstract: Q62702-F1498
Contextual Info: BF 1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

DB1-822

Abstract: BF1012
Contextual Info: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode X AGC o HF o— Input - X Drain G2 I HF Output + DC Gl 1 GND ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration BF 1012S NYs Q62702-F1627

14 MARKING

Abstract: br 1807
Contextual Info: SIEMENS NPN Silicon Darlington Transistors SMBTA 13 SMBTA 14 • High DC current gain • High collector current • Collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBTA 13 SMBTA 14 s1M s1N

SOT23 KJA

Contextual Info: SIEMENS BCR 135 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=2.2kiî, R2=47kft Marking Ordering Code Pin Configuration BCR 135 WJs 1 =B Package UJ II CNJ Q62702-C2257 CO II O Type

marking E7B

Contextual Info: SIEMENS BAW56 Silicon Switching Diode Array • For high-speed switching applications • Common anode Type Marking Ordering Code tape and reel B A W 56 A1s Q62702-A688 Pin Configuration Package1) 3 SOT-23 EHMHW Maximum Ratings per Diode Parameter Symbol

c33725

Abstract: c33740 Bc337
Contextual Info: SIEMENS NPN Silicon AF Transistors BC 337 BC 338 • High current gain • High collector current • Low collector-emitter saturation voltage • Complementary types: BC 327, BC 328 PNP Type Marking Ordering Code Q62702-C313 Q62702-C313-V3 Q62702-C313-V1